• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.422-422
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• 2009

Photocurable inorganic-organic hybrid materials were prepared from colloidal-silica nanoparticles synthesized through the solgel process and using acryl resin. The synthesized colloidal-silica nanoparticles had uniform diameters of around 20 nm, and they were organically modified, using methyl and methacryl functional silanes, for efficient hybridization with acryl resin. The organically modified and stabilized colloidal-silica nanoparticles could be homogeneously hybridized with aeryl resin without phase separation. The successfully fabricated hybrid materials exhibit efficient photocurability and simple film formation due to the photopolymerization of the organically modified colloidal-silica nanoparticles and acryl resin upon UV exposure. The fabricated hybrid films exhibit an excellent optical transmission of above 90% in the visible region as well as an enhanced surface smoothness of around 1 nm RMS roughness. In addition, the hybrid films exhibit improved thermal and mechanical characteristics, much better than those of acryl resin. More importantly, these photocurable hybrid materials fabricated through the synergistic combination of colloidal-silica nanoparticles with acryl resin are candidates for optical and electrical applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.460-461
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• 2009

We studied the effects of post-annealing treatment on poly(3-hexylthiophene)(P3HT, donor):[6,6]-phenyl $C_{61}$ butyric acid methyl ester(PCBM, acceptor) blend film as an active layer in the organic solar cells(OSCs). For the formation of the active layer, 3 wt.% P3HT:PCBM solution in chlorobenzene were deposited by spin-coating method. In order to optimize the performance of OSCs, the P3HT crystallization and the redistribution of PCBM cluster at P3HT:PCBM composition as a function of post-annealing condition from room temperature to $200^{\circ}C$ were measured by the Hall effect and the UV-vis Spectrophotometer. We thought that the improved efficiency in the OSCs with post-annealing treatment at $150^{\circ}C$ can be explained by the efficient separation or collection of the photogenerated excitons at donor-acceptor interface by P3HT crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.374-374
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• 2009

We have fabricated pure YBCO films and $BaZrO_3$ doped ones on $CeO_2$ buffered YSZ single crystal substrates using rf-sputtering method. In this work, pure YBCO and 2 vol% BZO doped YBCO target were used to investigate the flux pinning properties of BZO doped YBCO films compared to undoped ones. BZO nanodots within the superconducting materials was known to comprise the self-assembled columnar defects along the c-axis from the bottom of YBCO films up to the top surface, thus can be a very strong pinning sites in the applied magnetic field parallel to them. We will discuss the possibility of growing self-assembled columnar defects in the rf-sputtering method. It is speculated that BZO and YBCO phases can separate and BZO form nanodots surrounded by YBCO epitaxial layers and continuous phase separation and ordering between these two materials, which was well studied in Pulsed Laser Deposition method. For this purpose, some severe experimental conditions such as on-axis sputtering, shorter target-substrate distance, high rf-power, etc was adopted and their results will be presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.511-517
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• 2002

The complex 1 $([Cp*Fe(CO)_2]_2-(\mu-CH=CH-CH=CH))$ which have butadiene as a bridge were synthesized from $Cp*(CO)_2FeK$ and cis-3,4-dichlorocyclobutene. The derivatives of complex 1 where one or two carbonyl groups are replaced by phosphine ligands have been prepared by photochemical substitution. The new derivatives $([Cp*Fe(L)_2]_2-(\mu-CH=CH-CH=CH))$ where L = $(Ph_2PCH_2CH_2PPh_2)$ and $([Cp*Fe(CO)(L)]_2-(\mu-CH=CH-CH=CH))$ where L : $PPh_3$ have been characterized from $^^1H-$, $^^13C-$,$^^31P-NMR$ and elemental analysis. Obtained complexes have been studied in electrochemical experiment and UV/VIS-near-IR. The mixed-valence radical cation forms of complex 2, 3 species were found to be delocalized as the Class III. Based on the separation of the waves ($\triangle E$ : 0.470 ~ 0.605 V), the efficiency of electronic communication between two metal centers of cation species leading to stabilization relative to neutral species. The phosphine-substitute complexes (2, 3) displays two reversible oxidation waves and oxidation state of metal centers-dependent color change, electrochromism, was observed from yellow to orange and deep blue in methylene chloride.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.637-641
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• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• Solar Energy
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• v.17 no.2
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• pp.67-74
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• 1997

Spherical shape of phase change material(PCM) has been prepared by using sodium acetate trihydrate as a latent heat storage medium. Gelatin was used as an effective thickener to prevent undesirable phase separation. Sodium pyrophosphate decahydrate was used as nucleator to decrease the degree of supercooling in the thickened phase change material. Spherical PCM particles of 3-3.5 mm in diameter continuously manufactured with molten PCM with those conditions. The particle size of PCM was not affected by the effluent velocity of molten PCM in range of 1.3-1.8 ml/min. DSC, SEM and XRD were also used to characterize the properties of PCM particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.632-635
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• 2001

Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.386-387
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• 2006

This study is about the recycling technology of scrap a PCB(printed circuit board) produced in home appliances or automobile industry. And we develop the recycling technology of cooper (Cu)which is contained to leaching solution. In stead of electrolytic collecting in existing sulphuric atmosphere, we apply process using the ammonia solution which is used in economizing energy. So m the process of electrolyzing scrap a PCB through the leaching and separation, we examine the effect of the nickel contained to the solution and the cooper degree of purity which is changed according to current density.

• Transactions of Materials Processing
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• v.10 no.3
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• pp.253-260
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• 2001

This study was performed to investigate the optimized warm forming conditions which gave the maximum drawing depth in square cup drawing of clad sheet metals, by changing the temperatures of die and blankholder and also shapes and materials of blanks. Two kinds of clad sheet metals, STS304-A1050-STS304 and STS304-A1050-STS430 were selected for experiments. The relative drawing depth of STS304-A1050-STS304 clad sheet was increased up to 4.4 at $150^{\circ}C$ that was 29% higher than at room temperature, whereas STS304-A1050-STS430 material was improved to 3.9 at $120^{\circ}C$ which was 15% better than at room temperature. In addition, comparison of wall thickness and hardness of a warm drawn cup with those of room temperature showed more even distributions. No separation between each laminated material after drawing occurred through inspection by microscope as well as application of penetrant test and bond strength test. Therefore, warm forming technique was confirmed to give better results in deep drawing of stainless clad sheet metal.