• Nuclear Engineering and Technology
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• v.53 no.10
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• pp.3158-3163
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• 2021

Chromium material is commonly used for fusion plasma facing applications because of the low neutron activation property. The Monte Carlo method is one of the useful ways to investigate the ion-target interactions. In this study, Chromium target irradiated by protons was investigated using Monte Carlo based simulation tools. In this context, the calculations of radiation damage on Chromium material irradiated with protons at 17.9 and 22.3 MeV energies were carried out using GEANT4 and SRIM codes. Besides, the cross sections for proton interaction with Chromium target were calculated by the TALYS 1.9 code using CTM + FGM, BSFGM, and GSFM level densities. As a result, GEANT4, SRIM and TALYS 1.9 codes provide a suitable tool for the predictions of radiation damage and cross cross section with proton irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.402-403
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• 2006

This research aims to develop the multiple channel electrochemical DNA chip using microfabrication technology. At first, we fabricated a high integration type DNA chip array by lithography technology. Several probe DNAs consisting of thiol group at their 5-end were immobilized on the gold electrodes. Then target DNAs were hybridized and reacted. Cyclic voltammetry showed a difference between target DNA and control DNA in the anodic peak current values. Therefore, it is able to detect a plural genes electrochemically after immobilization of a plural probe DNA and hybridization of non-labeling target DNA on the electrodes simultaneously. It suggested that this DNA chip could recognize the sequence specific genes.

• Journal of Powder Materials
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• v.15 no.1
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• pp.1-5
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• 2008

ZnS-$SiO_2$ composite is normally used for sputtering target. In recent years, high sputtering power for higher deposition rate often causes crack formation of the target. Therefore the target material is required that the sintered target material should have high crack resistance, excellent strength and a homogeneous microstructure with high sintered density. In this study, raw ZnS and ZnS-$SiO_2$ powders prepared by a 3-D mixer or high energy ball-milling were successfully densified by spark plasma sintering, the effective densification method of hard-to-sinter materials in a short time. After sintering, the fracture toughness was measured by the indentation fracture (IF) method. Due to the effect of crack deflection by the residual stress occurred by the second phase of fine $SiO_2$, the hardness and fracture toughness reached to 3.031 GPa and $1.014MPa{\cdot}m^{1/2}$, respectively.

• The Journal of the Acoustical Society of Korea
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• v.29 no.1E
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• pp.38-44
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• 2010

This paper is based on our comments and proposed amendments to the documents, Annex A, Phantom for determining Maximum Depth of Penetration, and Annex B, Local Dynamic Range Using Acoustical Test Objects 87/400/CDV. IEC 61391-2 Ed. 1.0 200X, prepared by IEC technical Committee 87; Ultrasonics. The documents are concerned with the influence of microstructure of reference target material on the ultrasonic backscattering. Previous works on the attenuation due to backreflection and backscattering of reference target materials are reviewed. The drawback to the use of ungraded stainless steel and metallic materials without microstructural data such as, crystal structure, basic acoustic data of sound velocity and attenuation, grain size, roughness and elastic constants has been discussed. The analysis suggested that the insightful conclusion can be made by differentiating the influence arising from target size and microstructure on the backscattering measurements. The microstructural parameters are associated with physical, geometrical, acoustical and mechanical origins of variation with frequency. Further clarification of such a diverse source mechanisms for ultrasonic backscattering would make the target material and its application for medical diagnosis and therapy simpler and more reliable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.300-300
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• 2010

Ceramic capacitor의 에너지내량을 향상시켜 제품의 신뢰성을 높이고자 RF Sputtering을 이용하여 외부전극을 형성하였다. 본 연구에서는 Target의 종류, 증착 시간 및 열처리 유/무에 따른 Ceramic capacitor의 전기적 특성 및 미세구조를 분석하여 최적조건을 확립하였으며, 최적 증착 조건으로 제작한 Ceramic capacitor의 에너지내량을 측정하였다. Target은 Ni target과 Cu target을 사용하였으며, Sputtering 시간은 10, 30, 60분으로 하였다. Sputtering 시간에 따른 Ceramic capacitor의 용량 특성과 손실은 큰 차이가 없었지만, Wire 연결시 Sputtering 시간에 따라 납땜성의 차이가 나타났으며, 증착 시간과 열처리 유/무에 따른 에너지내량의 변화를 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.365-366
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• 2007

High quality cathode with high deposition rate of thin films and long target life time is required for manufacturing TFT-LCD and semiconductor. We developed WV(wide view) sputtering cathode with wide erosion area and high deposition rate. Ti thin film thickness variation in WV cathode is below 5% for 380 kWh target life time. Al thin film thickness using normal cathode is decreased about 20%. By using WV cathode, target using efficiency was improved 40%. in comparison with normal cathode.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.12
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• pp.1262-1269
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• 2008

Though multilayered foam-panel structures have been widely used to reduce sound transmission in various fields, most of the previous works to design them were conducted by repeated analyses or experiments based on initially given configurations or sequences. Therefore, it was difficult to obtain an optimal sequence of multilayered foam-panel structure yielding superior sound isolation capability. In this work, we propose a new design method to sequence a multi-panel structure lined with a poroelastic material having maximized sound transmission loss. Being formulated as a one-dimensional topology optimization problem fur a given target frequency, the optimal sequencing of panel-poroelastic layers is systematically carried out in an iterative manner. In this method, a panel layer is expressed as a limiting case of a poroelastic layer to facilitate the optimization process. This means that main material properties of a poroelastic material are treated as interpolated functions of design variable. The designed sequences of panel-poroelastic multilayer were shown to be significantly affected by the target frequencies; more panels were obtained at higher target frequency. The sound transmission loss of the system was calculated by the transfer matrix derived from Biot's theory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1347-1351
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• 2004

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.665-670
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• 2016

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over $1,000^{\circ}C$. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about $1{\sim}5{\mu}m$, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.