• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.27-31
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• 2017

In this study, the effect of Tb inward diffusion on the magnetic properties of the Nd-Fe-B sintered magnets was studied. After sintering of the magnets, $TbF_3$ slurries were dip-coated on the surface of the samples, then heat-treatment was followed for $TbF_3$ diffusion. The element distribution in the magnets and the diffusion profiles of Tb ions were analyzed by an EPMA (electron probe micro-analyzer). Prolonged heat treatment resulted in a deeper diffusion length of Tb ions. Coercivity of the $1^{st}$ heat-treated sample showed 21.86 kOe, while that of the $1^{st}$, $2^{nd}$ heat-treated and annealed sample revealed 34 kOe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.510-513
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• 2003

Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.37-40
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• 2001

This paper presents the modeling methodology of Zinc diffusion process applied for high-speed avalanche photodiode fabrication using neural networks. Three process factors (sealing pressure, amount of Zn$_3$P$_2$ source per volume, and doping concentration of diffused layer) are examined by means of D-optimal design experiment. Then, diffusion rate and doping concentration of Zinc in diffused layer are characterized by a static response model generated by training fred-forward error back-propagation neural networks. It is observed that the process models developed here exhibit good agreement with experimental results.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.991-996
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• 2002

Transient magnetic diffusion process in a melt-cast BSCCO-2212 tube is analyzed by an analytical method. The transient diffusion partial differential equation is transformed into an ordinary differential equation by integral method. The penetration depth of magnetic field into a superconducting tube is obtained by solving the differential equation numerically. The results show that the penetration depth as a function of time which is somewhat different from the results by Bean's critical state model. The reason of the difference between the present results and that of Bean's model is discussed and compared in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.117-120
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• 2005

The SONOS devices have been fabricated by the conventional $0.35{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with NOR array. Two-bit operation using conventional process achieve the high density memory compare with other two-bit memory. Lateral diffusion phenomenon in the two-bit operation cause soft error in the memory. In this study, the programming conditions arc investigated in order to reduce lateral diffusion for two-bit operation of CSL-NOR type SONOS flash cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 초전도 자성체
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• pp.41-45
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• 2002

Transient magnetic diffusion process in a melt-cast BSCCO-2212 tube is analyzed by an analytical method. The transient diffusion equation is transformed into an ordinary differential equation by integral method. The penetration depth of magnetic field into a superconducting tube is obtained by solving the differential equation numerically. The results show that the penetration depth as a function of time which is somewhat different from the results by Bean's critical current model. The reason of the difference between the present results and that of Bean's model is discussed and compared in this paper.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.84-87
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• 2003

The interfacial diffusion in Fe/Cr/MgO(001) multilayers has been studied using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and anomalous x-ray scattering (AXS). The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers with Cr-$4{\AA}$-thick was larger than that with Cr-$4{\AA}$-thick. The results of EXAFS indicated that the Fe element dominantly diffuse into the stable Cr layers at the Fe/Cr interface. The AXS was certified the existence of the interdiffused Fe element in the Cr layers. Our study revealed that the rough interface of the Fe/Cr multilayers was caused by the interfacia diffusion of Fe element into the Cr layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.