• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.05a
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• pp.658-661
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• 2003

The transmission loss coefficient is very important acoustic property in parallel with absorption and acoustic impedance categorizing the acoustical materials, which can control the acoustical problems. At the same time, the transmission loss coefficient is a key parameter to choose the optimum material for the analysis of acoustical characteristics of material using SEA(Statistical Energy Analysis). In this paper, the transmission loss coefficient measurement system using 4-microphone impedance tube is proposed, based on the idea calculating the full transfer matrix of the acoustical sample to test. The theoretical background and measurement system are introduced, and finally the measurement results are verified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.592-595
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• 2000

The electron transport coefficients in $SF_6$+$N_2$ gas is analyzed in range of E/P values from 70~240(V/cm $Torr^{-1}$) at 2$0^{\circ}C$ by Boltzmann method that using set of electron collision cross sections determined by authors. The result of this Boltzmann simulation such as ionisation coefficient, attachment coefficient, effective ionisation coefficient and breakdown voltage are in nearly agreement with the respective experimental and theoretical for a range of E/P.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.49 no.5
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• pp.313-319
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• 2000

In order to design the current carrying conductor for GIS, it is important to predict temperature-rise when rated current flows in the bus bar. However, it is not easy to apply the correct heat transfer coefficient on the boundary between different material for the thermal analysis. In this paper, the heat transfer coefficient which depends on parameters such like material constant, model geometry as well as ambient temperature, was calculated by analytic method. The calculated coefficient is used for the temperature rise prediction by F.E.M. The results show good agreement with experimental data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.453-457
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• 2008

In this thesis, piezoelectric properties and sintering properties of PCW-PNN-PZT+0.5 wt%$MnO_2$ ceramics adding $B_2O_3$ after creating the specimens with a general method. The lattice constant from the analysis of crystal structure showed that the crystal structure of ceramic features both rhombohdral and tetragonal structures and that the pychlore structure was decreased with the increase of the sintering temperature. The electromechanical coupling coefficient showed its maximum of 31 % in the sintered specimens at $1050^{\circ}C$, and its minimum of 20 % in the sintered specimens at $1150^{\circ}C$. The mechanical quality coefficient marked the maximum of 139 at the sintering temperature of $1150^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.346-347
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• 2005

In this study, in order to develop the low temperature sintering ceramics, PZT ceramics adding $MnO_2$, $B_2O_3$ were manufactured, and their piezoelectric and dielectric properties is investigated. The results of this study were gotten such as follows. The electromechanical coupling coefficient(kp) showed good properties on the whole, showed its maximum value 28.266 in specimens sintered at 1200[$^{\circ}C$]. The mechanical quality coefficient(Qm) showed its maximum value 162.61 in specimens sintered at 1200[$^{\circ}C$] and was increased by increasing sintering temperature. The dielectric constant showed the optimum values of 538.903 at specimen sintered at $1000^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.585-586
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• 2005

BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.114-114
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• 2001

The thermal and friction characteristics of phenolic resin and model friction materials were investigated with the content of acrylonitrilebutadienerubber(NBR). The thermal characteristics of material was performed by dynamic mechanical thermal analysis and differential scanning calorimetry. The friction and wear characteristics of the material were determined by using friction material testing machine. The results show that with the more content of rubber, the loss modulus of friction material was increased. The friction coefficient and the specific wear rate with various NBR contents were reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.6
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• pp.621-626
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• 2002

The amplitude of a back-wall echo depends on the reflection coefficient of the interface between a transducer and a test material when using contact pulse-echo ultrasonic testing. A couplant is used to transmit ultrasonic energy across the interface, but has an influence on the amplitude of the pulse-echo signal. To investigate the couplant effect on pulse-echo ultrasonic testing, back-wall echoes are measured by using various couplants made of water and glycerine in a carbon and austenitic stainless steel specimens. The amplitude of the first back-wall echo and the apparent attenuation coefficient increases with the acoustic impedance of the couplant. The couplant having a higher value of the transmission coefficient is more effective for flaw detection. The reflection coefficient should be known in order to measure the attenuation coefficient of the test material.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1064-1069
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• 2010

Thin films have been used in a large variety of technological applications such as solar cells, optical memories, photolithographic masks, protective coatings, and electronic contacts. If thin films experience frequent temperature changes, thermal stresses are generated due to the difference in the coefficient of thermal expansion between the film and substrate. Thermal stresses may lead to damage or deformation in thin film used in electronic devices and micro-machined structures. Thus, knowledge of the thermomechanical properties of thin films, such as the coefficient of thermal expansion, is an important issue in determining the stability and reliability of the thin film devices. In this study, thermal cycling of Cu and Ag thin films with various microstructures was employed to assess the coefficient of thermal expansion of the films. The result revealed that the coefficient of thermal expansion (CTE) of the Cu and Ag thin films increased with an increasing grain size. However, the effect of film thickness on the CTE did not show a remarkable difference.