• Title/Summary/Keyword: Material change

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The Characteristics of Te-light doped S $b_{85}Ge_{15}$Thin Film as Phase Change Optical Recording Media (Te 을 미세 도핑한 S $b_{85}Ge_{15}$ 상변화 기록 박막의 특성)

  • 김종기;김홍석;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.20-22
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    • 1997
  • In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

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High School Exploration of a Phase Change Material as a Thermal Energy Storage

  • Ardnaree, Kwanhathai;Triampo, Darapond;Yodyingyong, Supan
    • Journal of the Korean Chemical Society
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    • v.65 no.2
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    • pp.145-150
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    • 2021
  • The present study describes a hands-on experiment to help students understand the concept of phase change or phase transition and its application in a phase change material (PCM). PCMs are substances that have the capability of storing and releasing large amounts of thermal energy. They act as energy storage materials that provide an effective way to save energy by reducing the electricity required for heating and cooling. Lauric acid (LA) was selected as an example of the PCM. Students investigated the temperature change of LA and the temperature (of air) inside the test tube. The differences in the temperatures of the systems helped students understand how PCMs work. A one-group pretest and posttest design was implemented with 34 grade-11 students in science and mathematics. Students' understanding was assessed using a multiple-choice test and a questionnaire. The findings revealed that the designed activity helped students understand the concept of phase change and its application to materials for thermal energy storage.

Recognition of Material Temperature Response Using Curve Fitting and Fuzzy Neural Network

  • Ryoo, Young-Jae;Kim, Seong-Hwan;Chang, Young-Hak;Lim, Yong-Cheol;Kim, Eui-Sun;Park, Jin-Kyn
    • Transactions on Control, Automation and Systems Engineering
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    • v.3 no.2
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    • pp.133-138
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    • 2001
  • This paper describes a system that can used to recognize an unknown material regardless of the change of ambient tem-perature using temperature response curve fitting and fuzzy neural network(FNN). There are some problems to realize the recogni-tion system using temperature response. It requires too many memories to store the vast temperature response data and it has to be filtered to remove noise which occurs in experiment. And the temperature response is influenced by the change of ambient tempera-ture. So, this paper proposes a practical method using curve fitting the remove above problems of memories and nose. And FNN is propose to overcome the problem caused by the change of ambient temperature. Using the FNN which is learned by temperature responses on fixed ambient temperature and known thermal conductivity, the thermal conductivity of the material can be inferred on various ambient temperature. So the material can be recognized by the thermal conductivity.

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A Study of Heat Storage System with Phase Change Material - Inward Melting and Solidification in a Horizontal Cylinder - (상변화물질을 이용한 잠열축열조에 관한 기초 연구 - 수평원관내에서의 내향용융 및 응고열전달 실험 -)

  • Kim, I.G.;Cho, N.C.;Kim, J.G.;Lee, C.M.;Yim, C.S.
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.1 no.4
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    • pp.319-329
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    • 1989
  • Heat transfer phenomena during inward melting and solidification process of the phase change material were studied expertimentally. The phase change medium was 99% pure n-docosane paraffin ($C_{22}H_{46}$). The solid-liquid interface motion during phase change was recorded photographically. Measurements were made on the temperature, the solid-liquid interface, the melted or frozen mass and the various energy components stored or extracted from the cylinder wall. For melting, the experimental results reaffirmed the dominant role played by the conduction at an early stage, by the natural convection at longer time. For solidification, natural convection effects in the superheated liquid were modest and were confined to short freezing time. Although the latent energy is the largest contributor to the total stored or extracted energy, the aggregate sensible energies can make a significant contribution, especially at large cylinder wall superheating or subcooling, large initial phase change material subcooling or superheating.

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Change in Magnetic Flux in the Air Due to Load (하중에 의한 공기중 자속의 변화)

  • Lee, Jeong-Hee
    • Journal of the Korean Society for Nondestructive Testing
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    • v.29 no.1
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    • pp.21-26
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    • 2009
  • In order to determine the effective way of measuring the Mode I stress intensity factor($K_1$) by means of the alternating current potential drop(ACPD) technique for a material containing a two-dimensional surface crack, the change in magnetic flux in the air due to load was studied theoretically and experimentally. The magnetic flux in the air between crack surfaces is uniform and is not changed by increasing the load in the specimen and experimental results are the same as those obtained from theoretical analysis. Therefore, the change in potential drop due to load in the measuring system which was designed to induce a large amount of electro-motive force was caused by the change in internal inductance of material and the change in the mutual inductance concerned with internal inductance of material.

Application of 4-D resistivity imaging technique to visualize the migration of injected materials in subsurface (지하주입 물질 거동 규명을 위한 4차원 전기비저항 영상화)

  • Kim, Jung-Ho;Yi, Myeong-Jong
    • 한국지구물리탐사학회:학술대회논문집
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    • 2007.12a
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    • pp.31-42
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    • 2007
  • Dc resistivity monitoring has been increasingly used in order to understand the changes of subsurface conditions in terms of conductivity. The commonly adopted interpretation approach which separately inverts time-lapse data may generate inversion artifacts due to measurement error. Eventually the contaminated error amplifies the artifacts when reconstructing the difference images to quantitatively estimate the change of ground condition. In order to alleviate the problems, we defined the subsurface structure as four dimensional (4-D) space-time model and developed 4-D inversion algorithm which can calculate the reasonable subsurface structure continuously changing in time even when the material properties change during data measurements. In this paper, we discussed two case histories of resistivity monitoring to study the ground condition change when the properties of the subsurface material were artificially altered by injecting conductive materials into the ground: (1) dye tracer experiment to study the applicability of electrical resistivity tomography to monitoring of water movement in soil profile and (2) the evaluation of cement grouting performed to reinforce the ground. Through these two case histories, we demonstrated that the 4-D resistivity imaging technique is very powerful to precisely delineate the change of ground condition. Particularly owing to the 4-D inversion algorithm, we were able to reconstruct the history of the change of subsurface material property.

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A Study on Characteristics of Phase Change in Chalcogenide Multilayered Thin Film (칼코게나이드 다층박막의 상변화 특성에 관한 연구)

  • Choi, Hyuk;Kim, Hyun-Gu;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1426-1427
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    • 2006
  • Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

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Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films (비정질 Ge1Se1Te2 과 Ge2Sb2Te5 칼코게나이드 박막의 상변화특성)

  • Chung Hong-Bay;Cho Won-Ju;Ku Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.10
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    • pp.918-922
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    • 2006
  • Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

Loading Effect on ACPD of a Crack in Paramagnetic Material (균열을 가진 상자성체의 교류전위차에 미치는 하중의 영향)

  • Lee, Jeong-Hee
    • Journal of the Korean Society for Nondestructive Testing
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    • v.19 no.1
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    • pp.1-7
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    • 1999
  • In order to determine the mode I stress intensity factor ($K_I$) by means of the alternating current potential drop(ACPD) technique, the change in potential drop due to load for a paramagnetic material containing a two-dimensional surface crack was examined. The cause of the change in potential drop and the effects of the magnetic flux and the demagnetization on the change in potential drop were clarified by using the measuring systems with and without removing the magnetic flux from the circumference of the specimen. The change in potential drop was linearly decreased with increasing the tensile load and was caused by the change in conductivity near the crack tip. The reason of decreasing the change in potential drop with increasing the tensile load was that the increase of the conductivity near the crack tip due to the tensile load caused the decreases of the resistance and internal inductance of the specimen The relationship between the change in potential drop and the change in $K_I$ was not affected by demagnetization and was independent of the crack length.

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