Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
- /
- Pages.1426-1427
- /
- 2006
A Study on Characteristics of Phase Change in Chalcogenide Multilayered Thin Film
칼코게나이드 다층박막의 상변화 특성에 관한 연구
- Choi, Hyuk (Department of Electronic Materials Eng., Kwangwoon Univ.) ;
- Kim, Hyun-Gu (Department of Electronic Materials Eng., Kwangwoon Univ.) ;
- Chung, Hong-Bay (Department of Electronic Materials Eng., Kwangwoon Univ.)
- Published : 2006.07.12
Abstract
Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide
Keywords