• Journal of Advanced Marine Engineering and Technology
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• v.28 no.6
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• pp.962-971
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• 2004

This paper has dealt with thermo-physical properties of microencapsulated phase change material slurry as a latent heat storage material having a low melting point. The measured results of the thermo-physical properties of the test microencapsulated phase change material slurry, those are, density, specific heat, thermal conductivity and viscosity, were discussed for the temperature region of solid and liquid phases of the dispersion material (paraffin). The measurements of these properties of microencapsulated phase change material slurry have been carried out by using a specific-gravity meter, a water calorimeter, a differential scanning calorimeter(DSC), a transient hot wire method and rotating type viscometer, respectively. It was clarified that the additional properties law could be applied to the estimation of the density and specific heat of microencapsulated phase change material slurry and also the Euckens equation could be applied to the estimation of the thermal conductivity of this slurry.

• Journal of the Korean Society of Visualization
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• v.21 no.2
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• pp.63-71
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• 2023

Energy storage and distribution technologies are emerging as important factors as research on renewable energy continues. Analyzing the thermal flow of phase change material inside a latent heat storage device and to predict the phase change time is an important part for improvement of thermal performance. However, most of the current research is based on the trial-and-error experimental investigation to measure the phase change time. Therefore, in this study, a can-type phase change material container was designed, and the numerical method for analyzing the thermal flow of phase change material was established and validated. The error rate of the phase change time between the numerical and experimental results was within 5%, which proves its reliability. As a result, the phase change finishing times were found to be 78 minutes with inlet fluid temperature of 80℃ during charging process, and 126 minutes with inlet fluid temperature of 9℃ during discharging process.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.4
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• pp.367-371
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• 2003

In order to determine the effective way of measuring the Mode I stress intensity factor for a material containing a two-dimensional surface crack by means of the alternating current potential drop(ACPD) technique, the change in magnetic flux density between crack surfaces and above the specimen surface due to load was studied theoretically. The magnetic flux density in the air between crack surfaces is uniform and above the specimen surface is not changed by increasing the load in the material. Therefore, the change in potential drop due to load in a measuring system which was designed to induce a large amount of electro-motive force was caused by the change in internal inductance of material, the change in the mutual inductance between internal inductance of material and measuring system and the change in the mutual inductance between internal inductance of material and power supply line.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.285-290
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• 2015

The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.05a
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• pp.150-151
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• 2014

A mold of free-form concrete segment can be used only one time. Thus, the construction duration and cost are increased. The materials of the mold such as wood and metal have limitations due to the implementation and reuse. The review of the material of the mold for free-form concrete segment is needed to reduce duration and production cost. Phase change material can be used both to implement free-shape by heating and to produce mold after cooling. After using Phase change material can be re-used to mold by heating. The scope of this study is many kind of phase change materials for molding. The aim of this study is to analyze the phase change materials for production of changable mold for free-form concrete segment. In this study, the paraffin wax that is melted at 64℃ was selected by considering both the energy efficiency and the weather of Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.1
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• pp.162-168
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• 2008

In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.4
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• pp.618-623
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• 2004

This paper has dealt with the heat storage characteristics of gel type micro size latent heat storage material slurry. The heat release operation to the gel type micro size latent heat storage material slurry was carried out using hot air bubbles by direct contact heat exchange. This experiment was carried out using phase change material of n-paraffin so the heat release amount is higher than cold water system. The parameters of this experiment were concentration of latent heat phase change material, height of heat release bath and inlet velocity of hot air. The main results obtained are as follows : (1) The effect of concentration of latent heat phase change material dispersed with water is very affective to the direct contact heat exchange between hot air and gel type micro size latent heat storage material slurry. (2) It is clarified that the most effective concentration of latent heat phase change material dispersed with water exists around 20mass% at this type of direct heat exchange model experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.144-145
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• 2007

Phase change random access memory is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to develop the new phase change material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of phase change material parameters using finite element analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.97-98
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• 2007

In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.