• Title/Summary/Keyword: Matching frequency

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Study of Electromagnetic Wave Absorption Properties with Particle Size in Soft Magnetic Alloy Powder (연자성 합금 분말의 입자크기에 따른 전자파 흡수 특성 비교)

  • Hong, S.H.;Sohn, K.Y.;Park, W.W.;Nam, J.M.;Moon, B.G.;Song, Y.S.
    • Journal of Powder Materials
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    • v.14 no.4
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    • pp.261-264
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    • 2007
  • The electromagnetic wave (EM) absorption properties of various particle size have been investigated in a sheet-type absorber using the $Fe_{73}Si_{16}B_{7}Nb_{3}Cu_{1}$ alloy powder. With decreasing the average particle size, the complex permeability (${\mu}_{r}$) and permittivity (${\varepsilon}_{r}$) increased and the matching frequency is shifted toward lower frequency. The fabricated EM wave absorbers showed permeability $2{\sim}6$, permittivity $17{\sim}23$ for a $-325{\sim}+400$ mesh sample, and the calculated power absorption was as high as 80% in the frequency range over 2 GHz.

Periodically Poled BaTiO3: An Excellent Crystal for Terahertz Wave Generation by Cascaded Difference-frequency Generation

  • Li, Zhongyang;Yuan, Bin;Wang, Silei;Wang, Mengtao;Bing, Pibin
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.179-184
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    • 2018
  • Terahertz (THz) wave generation by periodically poled $BaTiO_3$ (PPBT) with a quasi-phase-matching (QPM) scheme based on cascaded difference-frequency generation (DFG) is theoretically analyzed. The cascaded DFG processes comprise cascaded Stokes and anti-Stokes processes. The calculated results indicate that the cascaded Stokes processes are stronger than the cascaded anti-Stokes processes. Compared to a noncascaded Stokes process, THz intensities from $20^{th}$-order cascaded Stokes processes increase by a factor of 30. THz waves with a maximum intensity of $0.37MW/mm^2$ can be generated by $20^{th}$-order cascaded DFG processes when the optical intensity is $10MW/mm^2$, corresponding to a quantum conversion efficiency of 1033%. The high quantum conversion efficiency of 1033% exceeds the Manley-Rowe limit, which indicates that PPBT is an excellent crystal for THz wave generation via cascaded DFG.

A study on the Design and Fabrication of Microstrip Array Antenna for Ultra Wideband Applications (초광대역 마이크로스트립 안테나의 설계와 제작에 관한 연구)

  • Ham, Min-Su;Choi, Byung-Ha
    • Journal of Navigation and Port Research
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    • v.31 no.6
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    • pp.503-507
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    • 2007
  • In this paper, the ultra-widebend, microstrip patch antenna with the bandwidth of 3 GHz was implemented for ultra-wideband(UWB) wireless communication applications. In order to cover the very wide bandwidth of 3 GHz, a multi-resonance antenna was designed, each resonance frequency was separated into five frequency bend, 7.5, 8.1, 8.7, 9.3, and 9.9GHz with the interval of 600MHz BW. And for wideband characteristics of each antenna, U-slot antennas were designed at each center frequency. Designed five U-slot antennas were connected in series for multi-resonance of 3GHz BW and wideband matching was also designed for impedance matching transmission line calculated. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\epsilon}_r=4.8,\;h=0.6$ and loss tangent=0.0009 respectively. The implemented antenna's radiation patterns and gain were directivity characteristics and $1.46{\sim}4.08dBi$ at the five separated center frequency.

Design of 2.4/5.8GHz Dual-Frequency CPW-Fed Planar Type Monopole Active Antennas (2.4/5.8GHz 이중 대역 코프래너 급전 평면형 모노폴 능동 안테나 설계)

  • Kim, Joon-Il;Chang, Jin-Woo;Lee, Won-Taek;Jee, Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.8
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    • pp.42-50
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    • 2007
  • This paper presents design methods for dual-frequency(2.4/5.8GHz) active receiving antennas. The proposed active receiving antennas are designed to interconnect the output port of a wideband antenna to the input port of an active device of High Electron Mobility Transistor directly and to receive RF signals of 2.4GHz and 5.2GHz simultaneously where the impedance matching conditions are optimized by adjusting the length of $1/20{\lambda}_0$(@5.8GHz) CPW transmission line in the planar antenna The bandwidth of implemented dual-frequency active receiving antennas is measured in the range of 2.0GHz to 3.1GHz and 5.25GHz to 5.9GHz. Gains are measured of 17.0dB at 2.4GHz and 15.0dB at 5.2GHz. The measured noise figure is 1.5dB at operating frequencies.

A Dual frequency Monopole Antenna using CPW Feed Line (코프래너 급전 이중 주파수 모노폴 안테나)

  • Kim, Joon-Il;Choi, Soon-Shin;Jee, Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.8 s.338
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    • pp.47-54
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    • 2005
  • The design method for a dual frequency antenna using CPW feed lines is presented. The antenna structures can be simplified by CPW feed lines and easily designed on integrated circuits. The presented antenna has two resonant frequency ranges and each respective resonant frequency is determined by its own length of monopole antenna. We used an impedance matching method by using a monopole coupling related to the ground of CPW feed lines As a result, the resonant frequencies were 5.25[GHz] and 23.5[GHz] and their bandwidths $35.2\%,\;and\;41.3\%$, respectively, and also, the separation of the two frequencies $370\;%$. We presented an analytical designing method to implement a dual frequency monopole antenna and showed simple antenna structures having two frequency ranges for RFIC Integrations.

Characteristics Analysis of Class E Frequency Multiplier using FET Switch Model (FET 스위치 모델을 이용한 E급 주파수 체배기 특성 해석)

  • Joo, Jae-Hyun;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.15 no.4
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    • pp.596-601
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    • 2011
  • This paper has presented research results for the switching mode class E frequency multiplier that has simple circuit structure and high efficiency. Frequency multiplication is coming from the nonlinearity of the active component, and this paper models the FET active component as a simple switch and some parasitics to analyze the characteristics. The matching component parameters for the class E frequency doubler have been derived with modeling the FET as a input controlled switch and some parasitics. A circuit simulator, ADS, is used to simulate the output voltage and current waveform and efficiency with the variation of the parasitic values. With 2.9GHz input and 2V bias, the drain efficiency has been decreased from 98% to 28% with changing the parasitic capacitance from 0pF to 1pF at 5.8GHz output, which shows that the parasitic capacitance CP has the most significant effect on the efficiency among the parasitics of FET.

A Non-Linear Characteristics Modeling of High Frequency FL Lamp by Experimental Values (실험식을 이용한 고주파 형광램프의 비선형특성 모델링)

  • 함중걸;백수현
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.11 no.2
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    • pp.51-55
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    • 1997
  • The high frequency fluorescnet lighting systems are widely used because of their high luminous efficacy. However, the performance of the fluorescnet lamp at high frequency reveals significant changes depending upon operating frequency, lamp shape, lamp voltage and current while adapting either an electronic or an magnetic ballast. Therefore the matching between the fluorescent lamp and the ballast is the major concern in designing a lighting system. In this paper, high frequency characteristics of the FHF32W lamp is measured in a range of frequencies from 12kHz to 50kHz. And we presented a model of a fluorescnet lamp with non-linear impedance depending on the lamp current. Finally, after identifying the operating condition under negative imped¬ance behavior as lamp current changing, we proposed a method of choosing the optimal parameter of a high frequency fluorescnet lamp and the result is analyzed.

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A Study on the Absorption Performance of a Perforated Panel type of Resonator (다공패널형 공명기의 흡음성능에 관한 연구)

  • Song, Hwayoung;Yang, Yoonsang;Lee, Donghoon
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.28 no.6
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    • pp.224-231
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    • 2016
  • When aiming to reduce the low frequency noise of a subway guest room through sound absorbing treatment methods inside the wall of a tunnel the resonator is often more effective than a porous sound absorbing material. Therefore, the perforated panel type resonator embedded with a perforated panel is proposed. The perforated panel is installed in the neck, which is then extended into the resonator cavity so that it can ensure useful volume. The absorption performance of the perforated panel type of resonator is obtained by acoustic analysis and experiment. The analytical results are in good agreement with the experimental results. In the case of multiple perforated panel type resonators, as the number of perforated panels increase, the 1st resonance frequency is moved to a low frequency band and sound absorption bandwidth is extended on the whole. In order to obtain excellent absorption performance, the impedance matching between multi-panels should be considered. When the perforated panel in the resonator is combined with a porous material, the absorption performance is highly enhanced in the anti-resonance and high frequency range. In case of the resonator inserted with perforated panels of 2, the 2nd resonance frequency is shifted to a low frequency band in proportion to the distance between perforated panels.

Design of a GaN HEMT Power Amplifier Using Output Matching Circuit with Arbitrary Harmonic Impedances (임의의 고조파 임피던스를 갖는 출력 정합 회로를 이용한 GaN HEMT 전력증폭기의 설계)

  • Jeong, Hae-Chang;Son, Bom-Ik;Lee, Dong-Hyun;Ahmed, Abdul-Rahman;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.11
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    • pp.1034-1046
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    • 2013
  • In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

Microwave Absorbing Properties of M-type Barium Ferrites with BaTi0.5Co0.5Fe11O19 Composition in Ka-band Frequencies (BaTi0.5Co0.5Fe11O19 조성을 갖는 M형 바륨 페라이트의 Ka-밴드 전파흡수특성)

  • Kim, Yong-Jin;Kim, Sung-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.203-208
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    • 2009
  • Magnetic and Ka-band absorbing properties have been investigated in Ti-Co substituted M-type barium hexaferrites with $BaTi_{0.5}Co_{0.5}Fe_{11}O_{19}$ composition. The ferrite powders were prepared by conventional ceramic processing technique and used as absorbent fillers in ferrite-rubber composites. The magnetic properties were measured by vibrating sample magnetometer. The complex permeability and dielectric constant were measured by using the WR-28 rectangular waveguide and network analyzer in the frequency range 26.5~40 GHz. For the Ti-Co substituted M-hexaferrites, the ferromagnetic resonance is observed at Ka-band (29.4 GHz). The matching frequency and matching thickness are determined by using the solution map of impedance matching. A wide band microwave absorbance is predicted with controlled ferrite volume fraction and absorber thickness.