• 제목/요약/키워드: Main Gate

검색결과 325건 처리시간 0.023초

Factors Influencing Farm-Gate Shrimp Prices in Thailand: An Empirical Study Using the Time Series Method

  • MUANGSRISUN, Donlathorn;JATUPORN, Chalermpon;SEERASARN, Nareerut;WANASET, Apinya
    • The Journal of Asian Finance, Economics and Business
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    • 제8권5호
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    • pp.769-775
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    • 2021
  • The objective of this research was to analyze the factors influencing the farm-gate shrimp prices in Thailand using monthly time series from January 2001 to December 2019. The econometric methodology was employed to satisfy the purpose, consisting of the cointegration test for revealing the long-run relationship and equilibrium elasticity between the variables as well as the error correction model for detecting speed adjustment to shock responses. The empirical results revealed that (1) the export shrimp prices, shrimp production in the country, and shrimp export volume indicated a long-run relationship running to the farm-gate shrimp prices in Thailand with the size of equilibrium elasticity equal to 1.083%, -0.256%, and 0.123, respectively, and (2) the farm-gate shrimp prices in Thailand would adjust to the equilibrium line with a speed equal to 20.147% if there was any kind of incident or shock which caused the relationship to deviate from the equilibrium point. There was no relationship in terms of global shrimp prices and the exchange rate for farm-gate shrimp prices in Thailand. The recommendations should emphasize the varieties of shrimp products for export to other countries beyond the main trading markets nowadays to reduce risks and fluctuations in the export prices of shrimp products.

벽천 디자인에 관한 연구 (A study on great wall design of the main gate in campus)

  • 한혜련
    • 한국실내디자인학회:학술대회논문집
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    • 한국실내디자인학회 2004년도 추계학술발표대회 논문집
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    • pp.173-174
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    • 2004
  • The Great Wall is an element in University which stand outs as a landmark. The Great Wall is located in front of the grand staircases of the gymnasium in the main gate area. Falling water and Lights shows a spectacle panorama in various point of view. Water falls down the top of the grand staircases and the front walls. And the red, blue and green lights brighten the falling water in the evenings. Also the relief of the palm tree and turtle symbolizes the University Identity. The wall is comprehends not only the day and the night but four seasons. The Water, Lights, and the Relief are coordinates well along with the new building in campus.

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1960년대 후반 청주 도심 내 물길에 관한 연구 (A Study on the Waterways in Traditional Urban Area of Late 1960s Cheongju Korea)

  • 김태영
    • 한국농촌건축학회논문집
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    • 제17권2호
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    • pp.27-34
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    • 2015
  • As part of the waterway restoration to renew traditional urban area, this paper is to assume and research Gyoseocheon(Gyoseo waterway) in Late 1960s Cheongju Korea. The main stream of Gyoseocheon flew from Sangjwagol(the head of the valley) of Uam Mt. to the north gate under Cheongju castle at first, and meandering from Sangdang Park, flew through Sudongseongdang and Bangadari Road to Musimcheon since open railroad of 1920s. This waterway, the eco-friendly figure of Gyoseocheon, that flew to inside the downtown with a planted tree and that is open space was so. The sub stream of Gyoseocheon originated in Seoundong and Tapdong were divided into two parts. One was to join the main stream of Gyoseocheon on Sangdang Park via Munhwadong, and the other was to join the sub stream of Musimcheon at northwest corner via south and west gate of Cheongju castle. This waterway as branch sewer were built into the road culvert.

On wind resistant properties of Tiger Gate suspension bridge

  • Xiang, H.F.;Chen, A.R.;Song, J.Z.
    • Wind and Structures
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    • 제1권1호
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    • pp.67-75
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    • 1998
  • Tiger Gate Bridge, a steel suspension bridge with a main span of 888 m and a stiffening box girder, is located at the Pearl River Estuary, Guangdong Province, one of the typhoon-prone area in China. Focusing on the developing of the full aeroelastic model of the bridge and simulation of the wind field of the bridge site in a large boundary wind tunnel at Tongji University, Shanghai, China, some main results about the wind resistant properties of the bridge including aerodynamic instability, buffeting responses both being in operation and erection stages by using of a full aeroelastic model wind tunnel testing are introduced. Some of analytical approaches to those aerodynamic behaviours are also presented, and compared with experimental data of the testing.

Photo Resistor Reflow 방법을 이용한 오프셋 마스크를 이용하지 않는 새로운 자기 정합 폴리 실리콘 박막 트랜지스터 (Self-aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process)

  • 박철민;민병혁;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 C
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    • pp.1085-1087
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    • 1995
  • A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

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제내지와 하도를 연계한 하천유역의 홍수유출해석기법 : II. 하구호 유출해석에의 적용 (Methods for Flood Runoff Analysis of Main Channel Connected with Interior Floodplain : II. Application for Analysis of Flood Runoff in Estuarine Lake)

  • 장수형;윤재영;윤용남;김원석
    • 대한토목학회논문집
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    • 제26권1B호
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    • pp.89-98
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    • 2006
  • 본 연구에서는 제내지와 하도를 연계한 하천유역의 홍수유출해석기법을 적용하여 홍수방어를 위한 치수측면에서 삽교호의 수리특성을 서해안 조위 및 유역의 유출상황과 연계하여 검토하였다. 특히, 삽교호 배수갑문의 운영조건을 모형 내에서 모의되도록 하여 다양한 형태로 하도내로 유입되는 유입수문량과 배수갑문을 연계한 해석을 시행하였다. 하도 및 제내지의 수리 특성 변화는 여러 경계조건에 비해 조위의 영향을 지배적으로 받는 것으로 분석되었으며, 이는 배수갑문의 실제와 같은 역할을 모형에 추가함으로써 다양한 대안별 수리특성 검토가 가능하였다. 지금까지 이와 같은 기능을 수행할 모형이나 방안이 없어 적용이 힘들었으나, 본 연구에서 개발한 기법을 적용함으로써 가능하게 되었고 이는 홍수방어를 위한 치수계획수립에 있어서 충분한 활용가치가 있을 것으로 기대되었다.

기록에 근거한 남한산성 암문의 명칭 설정에 관한 연구 (A Study on the Naming of the Hidden Gates in Namhansansung by Records)

  • 이천우;김석희
    • 한국농촌건축학회논문집
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    • 제21권4호
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    • pp.53-60
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    • 2019
  • The purpose of this study is to investigate the change of Hidden gates form with the times. Fortresses position is constructed on the Korea mountain ranges. Hidden gate, one of facilities to construct fortress among various factors, represents as route of supplies way, ask for rescue, or counterattack plan to come in. The shape of hidden gate changes depend on land form, function, and time period. Previous research partially based on archeology or history. This research analyze Namhan mountain Namhansansung, one of the highest hidden gates count in Korea, distributive by main fortress, Bong-am fortress, Hanbong fortress. Nahhan Mountain fortress repeatedly affected by King Injo in Joseon Dynasty. As a result, Nahhan Mountain fortress consist of hidden gates alternation depend on the time of establishment or extension which makes different shape or size.

Measurement and Simulation Study of RSFQ OR gate

  • Nam, Doo-Woo;Jung, Ku-Rak;Hong, Hee-Song;Joonhee Kang
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권1호
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    • pp.44-47
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    • 2003
  • There are several simulation programs in studying superconductor RSFQ (Rapid Single flux Quantum) electronic devices, which include WRspice, WinS, PSCAN, and JSIM. Even though different research groups use different simulation programs, it is not well known about which program gives the simulation results closer to the measurement values. In this work, we used both WRspice and WinS to simulate RSFQ OR gate and to compare the results from the different simulations. This comparison would help in deciding which program is better in the RSFQ circuit design. In the confluence buffer, which is the one of the main components of the DR gate, the measured bias margins were ${\times}23.2%$, while the margins from the simulations were ${\pm}35.56%$ from WRspice and it 53.1% from WinS. However, with the actual fabricated circuit parameters WRspice gave ${\pm}27%$. In WinS the circuit did not operate. We concluded that WRspice is more reliable.

A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity

  • Lho, Young-Hwan
    • 전기전자학회논문지
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    • 제15권2호
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    • pp.143-148
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    • 2011
  • MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

전자동 수문설계 소프트웨어 개발에 관한 연구 (A Study on Development of Automatic Water-gate Design Software)

  • 서병태;김일수
    • 한국공작기계학회논문집
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    • 제10권3호
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    • pp.50-54
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    • 2001
  • Manufacturing is characterized by increasing product variety and technical complexity, decreasing levels of demand, expanding global competition and declining profitability of organizations. To survive in such a complex environment, development of the automatic design system into design and manufacturing can be introduced to increase the flexibility and adaptability to markets. This paper presents the development of an automatic water-gate design system that composed of a main program and three modules, and was programmed by AutoLISP language under AutoCAD system. The devel-oped system is capable of generating water-gate design automatically according to input data as customer requirement.

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