• Title/Summary/Keyword: Magnetron sputtering system

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Structural and Optical Properties of TiO2 Thin Films Prepared by RF Reactive Magnetron Sputtering (RF reactive magnetron sputtering으로 제조한 TiO2 박막의 구조 및 광학적 특성)

  • Gang, Gye-Won;Lee, Yeong-Hun;Gwak, Jae-Cheon;Lee, Dong-Gu;Jeong, Bong-Gyo;Park, Seong-Ho;Choe, Byeong-Ho
    • Korean Journal of Materials Research
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    • v.12 no.6
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    • pp.452-457
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    • 2002
  • Titanium oxide films were prepared by RF reactive magnetron sputtering. The effect of sputtering conditions on structural and optical properties was investigated systemically as a function of sputtering pressure(5~20 mTorr) and $O_2/Ar$ flow ratio(0.08~0.4). The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. At low sputtering pressure and $O_2/Ar$ flow ratio, the films had preferred orientations along [101] and [200] directions. As the sputtering pressure and $O_2/Ar$ flow ratio increased, the intensity of the 101 and 200 diffraction peaks decreased gradually. The microstructure of the sputtered films showed the fine grain size (20nm~50nm) and columnar microcrystals perpendicular to the substrate. With increasing the sputtering pressure and decreasing $O_2/Ar$ flow ratio, the sputtered films showed the more porous columnar structure. XPS analysis showed that stoichiometric $TiO_2$ films were deposited at 7 mTorr sputtering pressure and 0.2 $O_2/Ar$ flow ratio. The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. Ellipsometeric analysis showed that the refractive index increased from 2.32 to 2.46 as the sputtering pressure decreased. The packing density calculated using the refractive index varied from 0.923 to 0.976, indicating that $TiO_2$films became denser as the sputtering pressure decreased.

Effect of Microstructure on Corrosion Behavior of TiN Hard Coatings Produced by Two Grid-Attached Magnetron Sputtering

  • Kim, Jung Gu;Hwang, Woon Suk
    • Corrosion Science and Technology
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    • v.5 no.1
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    • pp.15-22
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    • 2006
  • The introduction of two-grid inside a conventional process system produces a reactive coating deposition and increases metal ion ratio in the plasma, resulting in denser and smoother films. The corrosion behaviors of TiN coatings were investigated by electrochemical methods, such as potentiodynamic polarization test and electrochemical impedance spectroscopy (EIS) in deaerated 3.5% NaCl solution. Electrochemical tests were used to evaluate the effect of microstructure on the corrosion behavior of TiN coatings exposed to a corrosive environment. The crystal structure of the coatings was examined by X-ray diffractometry (XRD) and the microstructure of the coatings was investigated by scanning electron microscopy (SEM) and transmission electron spectroscopy (TEM). In the potentiodynamic polarization test and EIS measurement, the corrosion current density of TiN deposited by two grid-attached magnetron sputtering was lower than TiN deposited by conventional magnetron type and also presented higher Rct values during 240 h immersion time. It is attributed to the formation of a dense microstructure, which promotes the compactness of coatings and yields lower porosity.

Electrical and optical properties of AZO films sputtered in $Ar:H_2$ gas RF magnetron sputtering system

  • Hwang, Seung-Taek;So, Byung-Moon;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.192-192
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    • 2009
  • AZO films were prepared by $Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a low temperature of $100^{\circ}C$. To investigate the influence of $H_2$ flow ratio on the properties of AZO films, $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1% $H_2$ addition showed electrical properties with a resistivity of $5.06{\times}10^{-3}{\Omega}cm$. The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with $H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED.

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Conductive Characterization of DLC Thin Films Fabricated by Radio-Frequency Magnetron Sputtering

  • Cao, Nguyen Van;Kim, Tae-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.290-290
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    • 2011
  • In this study Diamond-like carbon (DLC) films were deposited on p-type Si substrates using a Radio-Frequency magnetron Sputtering system. The DLC film was deposited by bombarding graphite target with a N2/Ar plasma mixture with various conditions: substrate, pressure, deposition time, temperature of substrate, power and ratio of gas mixture. The effect on the conduction and hardness of DLC thin films were investigated. The conduction of DLC films were measured by I-V measurement. In addition, Raman analysis was performed to study the chemical bonding structure. The hardness was measured by Nano indentation. Atomic Force Microscopy was used for determined surface morphology of DLC film.

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Effects of RF Power on Physical and Electrical Characteristics of TiC Thin Films Deposited by Magnetron Sputtering (마그네트론 스퍼터링법으로 증착시킨 TiC 박막의 물리적, 전기적 특성에서 RF 파워의 영향)

  • Kim, Nam-Hoon;Park, Yong Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.458-461
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    • 2014
  • TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

Effect of substrate bias on electrical property of ZnO films deposited by magnetron sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.302-303
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    • 2008
  • Nominally undoped (intrinsic) ZnO thin films were deposited by magnetron sputtering system with utilization of substrate bias on silicon at $450^{\circ}C$. Oxygen gas was selected as sputtering gas. The deposited thins were evaluated with X-ray diffraction (XRD) for their microstructure analysis and Hall effect in Van der Pauw configuration for their electrical property. The XRD shows that the magnitude and polarity of substrate bias significantly influence the microstructure and electrical properties.

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Study on target erosion in rocking magnet sputtering system

  • Lee, Do-Sun;Kwon, Ui-Hui;Lee, Won-Jong
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.245-251
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    • 2005
  • A high performance dual rocking magnet sputtering gun has been developed. The rocking magnet sputtering gun introduces full-face erosion by rapidly rocking the magnet in the region where the high plasma density is maintained. The newly developed dual rocking magnet sputtering gun whose target utilization was 77 percent achieved high performance in quality in the view of target utilization and target life-time comparing to the existing magnetron sputtering gun. The PIC-MCC target erosion simulation has been performed simultaneously. Comparing experimental target erosion profiles with simulated target erosion profiles, the simulation could estimate the tendency of the target erosion profiles but could not estimate an exact target erosion profile. If the simulation were improved more precisely, the cost reduction for the development of the multiple rocking magnet sputtering gun would be expected.

Discharge Characteristics in Capacitively-Coupled Magnetron Sputtering System (용량 결합형 마그네트론 스퍼터링 장치의 방전 특성)

  • Park, M.H.;Kwak, D.J.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1732-1734
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    • 1999
  • In order to study the fabricating condition of phosphor layers of thin film EL devices, some discharge characteristics with several targets in the parallel-plate magnetron sputtering system will be studied. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors of fabricating condition of thin film EL device.

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Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor

  • Ko, Kyung-Min;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.328-332
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    • 2014
  • Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.