• 조명전기설비학회논문지
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• 제23권7호
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• pp.20-28
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• 2009

This paper presents the design of zero current switching ZCS pulse frequency modulation type DC-DC converter for magnetron power supply. A magnetron serving as the microwave source in a microwave oven is driven by a switch mode power supply (SMPS). SMPSs have the advantages of improved efficiency, reduced size and weight, regulation and the ability to operate directly from the converter DC bus. The demands of the load system and the design of the power supply required to produce constant power at 4[kV]. A magnetron power supply requires the ability to limit the load current under short circuit conditions. The current source series resonant converter is a circuit configuration which can achieve this. The main features of the proposed converter are an inherent protection against a short circuit at the output, a high voltage gain and zero current switching over a large range of output power. These characteristics make it a viable choice for the implementation of a high voltage magnetron power supply.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.1-6
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• 2012

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, $56^{\circ}$, and $16^{\circ}$, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ${\pm}1.62%$ and ${\pm}4.13%$, and the resistivity was $2.79{\times}10^{-3}W{\cdot}cm$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.13-14
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• 2008

A high rate magnetron sputtering source (HRMSS) was employed to deposit thick copper films. The HRMSS was manufactured by changing the magnet size, arrangement, and field intensity. For the preparation of thick copper films, the copper sputtering conditions using HRMSS were characterized based on the deposition parameters such as discharge characteristics, I-V characteristics of the source, and change of deposition rate. The deposition rate of copper turned out to be more than 5 times than that of conventional magnetron sputtering source. Thick copper films having thickness of more than $20{\mu}m$ were prepared by using HRMSS. The morphology and orientation of the films were investigated by scanning electron microscopy and x-ray diffraction.

• Nuclear Engineering and Technology
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• 제55권9호
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• pp.3121-3125
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• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

• 한국표면공학회지
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• 제47권4호
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.101-106
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• 1999

The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

• 한국진공학회지
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• 제9권3호
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• pp.290-295
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• 2000

KAIST-TOKAMAK에서 재현성이 좋은 저항가열 플라즈마를 발생시키는데 필요한 전이온화(pre-ionization)에 응용하기 위해 2.45 GHz 마그네트론을 사용하여 간편한 마이크로파 발생장치를 개발하였다. 장치에 사용한 마그네트론은 출력 500 W, 주파수 2.45 GHz이며, 일반적인 가정용 전자오븐(microwave oven)에 사용된다. 기존의 가정용 마그네트론은 음극(cathode)과 양극(anode)사이에 걸리는 고전압이 60 Hz의 주기를 갖기 때문에 약 16ms마다 약 8 ms 동안만 주기적으로 마이크로파를 발생한다. 이 마그네트론을 사용하여 토카막 전이온화에 충분할 정도로 연속적으로 발생되는 마이크로파를 얻기 위해서 음극과 양극사이에 개량된 회로로 리플전압이 작은 DC 고전압(5 kV 1 A)을 인가하였다. 본 논문에서는 주기적으로 생성.소멸하는 ECH 플라즈마와 연속적인 ECH 플라즈마를 발생시켜 랑뮈어탐침과 광증배관(PMT)을 이용한 이온 포화전류와 $H_\alpha$/ 방출(emission)을 측정하여 마이크로파 발생장치의 특성을 조사하였다.

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.162-166
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• 2015

Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.372-375
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• 2017

ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.