The invariant design of planar magnetron sputtering TFT-LCD

  • Yoo, W.J. (PVD Research & Development Center) ;
  • Demaray, E. (PVD Research & Development Center) ;
  • Hosokawa (PVD Research & Development Center) ;
  • Pethe, R. (PVD Research & Development Center)
  • Published : 1999.10.01

Abstract

The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

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