• Progress in Superconductivity
• /
• v.14 no.1
• /
• pp.30-33
• /
• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Journal of the Korean Magnetics Society
• /
• v.2 no.3
• /
• pp.228-232
• /
• 1992

Magnetic properties of grain aligned high $T_c\;Y_1Ba_2Cu_3O_{7-y}$ superconductor are inverstigated. Grain-aligned superconductors have magnetic anisotropy in the Cu-O layer like single crystals. The lower critical field $H_{c1},$ measured at the temperature range of 2 K up to 77 K, is found to be decreasing linearly as temperature goes up. Moreover, it decreaes more rapidly when the Cu-O layer is perpendicular to the external magnetic field. The temperature dependence of the magnetic susceptibility shows that the value of magnetic susceptibility, $4{\pi}\;X,$ is close to -1 at low temperature. The intra grain critical current density $J_c,$ obtained from the Bean's critical state model, is found to be comparable to that of single crystal superconductors.

• Journal of the Korean Magnetics Society
• /
• v.15 no.1
• /
• pp.7-11
• /
• 2005

A single slab in which one Ni(001) atom layer embedded between two of four Rh layers is considered to examine the oscillation of magnetic moment in each layer. The all electron total-energy full-potential linearized augmented plane wave(FLAPW) method was used to calculate the spin densities, magnetic moments, density of states(DOS), and the number of electrons within each muffin-tin(MT) sphere. The magnetic moment of the center layer Ni(C) in the system of 4Rh/Ni/4Rh is calculated to be 0.34${\mu}_B$, which is 40% have magnetic moment at the interface layers by strong band hybridization with Ni(C) when Ni(001) monolayers is inserted, and the magnetic moment shows a damped oscillation as we go from center Ni(C) layer to the surface Rh(S). From the calculated density of states, it is found that the Fermi level shifts inside the energy band of the Ni(C) in affection of Rh(001).

• Journal of the Korean Magnetics Society
• /
• v.23 no.1
• /
• pp.7-11
• /
• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.7
• /
• pp.793-796
• /
• 2004

In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The ${\Delta\theta}_50$ of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^\circ$, while that of the recording layer without seedlayer was about 11$^{\circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.

• Smart Structures and Systems
• /
• v.19 no.6
• /
• pp.695-703
• /
• 2017

In this paper, based on first-order shear deformation theory, the governing equations of motion for a sandwich curved beam including an elastic core and two piezo-magnetic face-sheets are presented. The curved beam model is resting on Pasternak's foundation and subjected to applied electric and magnetic potentials on the piezo-magnetic face-sheets and transverse loading. The five equations of motion are analytically solved and the bending and vibration results are obtained. The influence of important parameters of the model such as direct and shear parameters of foundation and applied electric and magnetic potentials are studied on the electro-mechanical responses of the problem. A comparison with literatures was performed to validate our formulation and results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.314-314
• /
• 2011

Using first principles calculations, we investigated the interface structure effects on the magnetic properties of the Fe/BaTiO3 system. On the BaO-terminated surface, a Fe monolayer is formed as two Fe atoms are adsorbed on the top sites of Ba and O in the ($1{\times}1$) surface unit and a Fe ML is formed on the TiO2-terminated surface as two Fe atoms are adsorbed on the two O top sites. The magnetic anisotropy energy of Fe was higher on the TiO2?-erminated surface (1.5 eV) than on the BaO-terminated surface (0.5 eV). The decomposed electron density of the states showed that the stronger hybridization of Fe with the TiO2 layer than with the BaO layer is the most important reason for the higher magnetic anisotropy energy.

• Journal of Magnetics
• /
• v.3 no.3
• /
• pp.69-73
• /
• 1998

A drum type magnetic separator was designed and optimized by computer simulation. The separator consisted of rotating outer shell of drum, magnetic flux generator drum which was assembled with numbers of disk type magnet holders, and drum axis around which the magnet holders were fixed. NdFeB magnet blocks were inserted into the disks, and the disks were assembled layer by layer along the drum axis. Magnetic circuits of the separator were simulated on the basis of highest magnetic strength, least cost, and high yield of separation by using a Vector Field S/W employing the Opera-2D program. The separator proved a separation yield of 95% in removing fine iron-base particles, and installed at Hot Rolling Mill of Pohang Iron & Steel Co. In Korea.

• Korean Journal of Materials Research
• /
• v.13 no.7
• /
• pp.447-452
• /
• 2003

Effects of annealing and thickness of Co layer in Co/IrMn bilayers on the magnetic properties have been investigated. The highest interfacial exchange coupling energy($J_{K}$ = 0.12 erg/$\textrm{cm}^2$) was obtained for 10 nm Co layer thickness. Exchange bias field is inversely proportional to the magnetization, the thickness of the pinned layer, and the grain size of antiferromagnetic layer. Also it is related to the interfacial exchange energy difference, which is expected to depend on the surface roughness. These results almost agree with the random-field model of exchange anisotropy proposed by Malozemoff. Exchange bias field decreased slowly with increasing annealing temperature up to X$300^{\circ}C$. However, exchange bias field increased above $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.103-106
• /
• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).