• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.376-382
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• 2017

Graphene nanoribbons with zigzag-shaped edge (zGNRs) are predicted to be magnetic insulator at the ground state, attracting significant interest in view of spintronic applications [1]. On the other hand, although they are energetically and thermodynamically more favored than zGNRs [2], graphene nanoribbons with armchair-shaped edge (aGNRs) have been less spotlighted than zGNRs due to the absence of magnetism. Herein, based on the combined density functional theory (DFT) and matrix Green's function (MGF) approach, we consider aGNRs functionalized with various molecular groups, and show that the spin polarizations develop for some of the considered aGNR edge functionalization cases. The origin of the induced magnetism will be discussed within the Lieb's theorem [3]. This work will provide a novel guidance for the development of graphene-based spintronic devices.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.105-109
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• 2019

Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.62-63
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• 2002

To reach 100 Gbit/in$^2$ magnetic recording densities in hard disk drives specular enhancement of giant magnetoresistance (GMR) effect in spin valve (SV) films has become one of the indispensable means for application as read elements in recording heads [1]. More recently specular spin valve (SSV) structure containing nano-oxides layers (NOL) were reported [2], where MR enhancement is caused to extended mean free path of majority spin polarized electrons through specular reflection at metal/insulator interfaces [3] in the SV films. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.242-242
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• 2016

Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.370.1-370.1
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• 2014

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active areas of research. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, ~100% spin polarization (P), and has a high Curie temperature (TC~850 K). On the other hand, Spinel ferrite CoFe2O4 has been widely studies for various applications such as magnetorestrictive sensors, microwave devices, biomolecular drug delivery, and electronic devices, due to its large magnetocrystalline anisotropy, chemical stability, and unique nonlinear spin-wave properties. Here we have investigated the magneto-transport properties of epitaxial CoxFe3-xO4 thin films. The epitaxial CoxFe3-xO4 (x=0; 0.4; 0.6; 1) thin films were successfully grown on MgO (100) substrate by molecular beam epitaxy (MBE). The quality of the films during growth was monitored by reflection high electron energy diffraction (RHEED). From temperature dependent resistivity measurement, we observed that the Werwey transition (1st order metal-insulator transition) temperature increased with increasing x and the resistivity of film also increased with the increasing x up to $1.6{\Omega}-cm$ for x=1. The magnetoresistance (MR) was measured with magnetic field applied perpendicular to film. A negative transverse MR was disappeared with x=0.6 and 1. Anomalous Hall data will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.161-161
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• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.186-191
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• 2004

The variation of magnetic properties with insulating materials(glass frits, talc and polyamide) in compressed powder cores composed of Fe$\sub$73.5/Cu$_1$Nb$_3$Si$\sub$15.5/B$\sub$7/ nanocrystalline alloy powders(size: 250～850 $\mu\textrm{m}$) and 3 wt% insulators has been investigated. Larger permeability was obtained at the frequency lower than 300～400 kHz for the powder cores including ceramic insulators(glass frits and talc) as compared to the cores with polyamide, while at higher frequency than 1 MHz the permeability of the former cores decreased rapidly. Further the cores with ceramic insulators showed larger core loss and smaller peak quality factor attained at lower frequency. On the contrary, the powder cores with polyamide exhibited high stability of permeabilities up to several MHz and superior core-loss and quality-factor properties. Moreover the dc bias property was better in the wide field range for the cores having polyamide. The enhanced magnetic properties of polyamide-added cores were attributed to the more sufficient electrical insulation between magnetic particles, where the higher insulation state was considered to be obtained from the larger volume fraction of polyamide in the powder cores.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.216-220
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• 2003

In this work, transmission characteristics of read and write signal were calculated when a MRAM (magnetic random access memory) cell is operated up to 10 GHz. Test device having long read and write lines was modeled in 3 dimensions to perform a simulation. The simulation was divided into two parts, read and write operations, and S-parameters were computed utilizing FEM (finite element method) algorithm. Transmission coefficients, S$\sub$21/, for read and write operations of MRAM device which was designed for a single cell test configuration were analyzed from DC to 1 GHz and DC to 10 GHz, respectively. When the insulator thickness between the bit and sense lines was increased from 500 to 1500 ${\AA}$, 3 dB attenuation frequency was increased by 3.3 times, from 135 to 430 MHz. The length of the bit and sense lines were 600 ${\mu}$m. In addition, access time was estimated by calculating the propagation delay utilizing S-parameters.