• Journal of Magnetics
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• v.8 no.1
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• pp.36-44
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• 2003

Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.314-319
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• 2014

Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.338-342
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• 2006

This paper analyzed the power loss of transformers considering the magnetic component. For this, each winding strategy and the effect of air gap between the ferrite core have been an important variable for optimal parameter calculation. Inductors are very well known design rules to devise, but the performance of the flyback converter as a function of transformer winding strategy has not been fully developed. The transformer analysis tool used was PExpert. The influence of the insulator thickness, effect of the air gap, how the window height and variation of the capacitive value effects the coil and insulator materials are some of parameters that have been analyzed in this work. The parameter analysis is calculated to a high frequency of 48[kHz]. Therefore, the final goal of this paper was to calculate and adjust the parameters according to the method of winding array and air gap minimizing the power loss.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.100-103
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• 2003

The magnetoresistance (MR) of $La_{1-\chi}S_{\chi}CoO_{3-\delta}$ films prepared by pulsed-laser deposition were investigated in order to clarify the magnetotransport properties around the metal-insulator transition. For the films in the metallic state ($\chi$ > 0.25), the MR(T) manifests a small peak at the Curie temperature due to the spin-disorder scattering. The transition of the film into the insulating state ($\chi\;\leq$ 0.25) is accompanied by an essential growth of the MR and results in a significant increase in the MR(T) with decreasing temperature, due to a phase separation into the ferromagnetic-metal clusters and the insulating matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.86-89
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• 1994

This paper describes the fabrication and basic characteristics of a Si Hall device fabricated on a SOI(Si-on-insulator) structure. In which SOI structure was formed by SOB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall device. The Hall voltage and sensitivity of the implemented SDB SOI Hall devices showed good linearity with respectivity to the applied magnetic flux density and supple iud current. The product sensitivity of the SDB SOI Hall device was average 670 V/A$.$T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10$\mu\textrm{m}$. Moreover, this device can be used at high-temperature, high-radiation and in corrosive environments.

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.739-743
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• 2003

New quaternary compounds $ANb_2PS_{10}$ (A = Na, Ag) and $AuNb_4P_2S_{20}$ were synthesized and characterized. The structures of three compounds consist of one-dimensional infinite chains built by [$Nb_2S_{12}$] and [$PS_4$] units. Cation atoms are occupied within the van der Waals gap of sulfur atoms between infinite chains to make -S…$M^+$…S- contacts. There is only one Au atom site and so crystallographically a unit cell contains four equivalent Au atoms in $AuNb_4P_2S_{20}$. This is only the half of the numbers of Na or Ag atoms in $NaNb_2PS_{10}$ or $AgNb_2PS_{10}$. The ratio between $Nb_2PS_{10}$ matrix vs the cation is, therefore, 1 : 1 for Ag and Na, but it is 2 : 1 for Au. Mixed valency in Au or Nb was expected to balance the charge in the latter compound. The electronic structures calculated based on the extended Huckel tight-binding method show that $ANb_2PS_{10}$ (A = Ag, Na) are semiconducting, while $AuNb_4P_2S_{20}$ is metallic, which is not consistent with the experimental results of these three compounds that all exhibit semiconducting property. The result of calculation suggests that $AuNb_4P_2S_{20}$ might be a magnetic insulator. Magnetic measurement experiment exactly proved that the compound is a Slater antiferromagnetic material with the Neels' temperature of 45 K. It is recognized, therefore, that electronic structure analysis is very useful to understand the properties of compounds.

• Journal of Magnetics
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• v.12 no.3
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• pp.103-107
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• 2007

Magnetic field induced structural transition has been systematically investigated for $La_{1-x}Ba_xMnO_3$ with the fine control of carrier doping $(0.15{\leq}x{\leq}0.20)$. Application of a magnetic field results in the suppression of the rhombohedral-orthorhombic transition temperature $(T_s)$ and the increase of insulator-metal transition temperature $(T_{MI})$. Near x = 0.17, where $T_S$ is similar to $T_{MI}$ at zero magnetic field, we found that the $T_S$ smoothly decreased with magnetic field even though it intersected the $T_{MI}$ near 3 T. Also, the magnetostructural phase diagram obtained from the temperature sweep and from the magnetic field sweep is not significantly modified. By comparing the magnetostructural transition in $La_{1-x}Sr_xMnO_3$, we have suggested that the large disorder originated from ionic size differences between La and Ba may weaken the sensitivity of the kinetic energy of $e_g$ electrons on the degree of lattice distortion in $La_{1-x}Ba_xMnO_3$.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.153-153
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• 2015

• Bulletin of the Korean Chemical Society
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• v.17 no.1
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• pp.43-45
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• 1996

Structural and electronic properties of an alkali metal fulleride, Rb1C60, was studied. In spite of the chain structure with shortdistance between balls along the crystallographic a-direction, the electronic structure calculation study with the X-ray defined crystal structure shows that Rb1C60 is a three-dimensional metal at room temperature. This result is different from the magnetic experiments in which the compound was found to behave as a quasi-one-dimensional metal. Partial Fermi surface nesting is supposed to be the reason for the metal-insulator transition found in Rb1C60 at ∼50 K.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.515-518
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• 1995

YSe1.83 was synthesized by vapor transport technique and its crystal structure was determined. The structure was isostructure of LaTe2-x, which was layered structure consisting of two-atom thick layers of YSe with distorted NaCl-type structure and one-atom thick layer of Se. The substructure of YSe1.83 was tetragonal with space group of P4/nmm and a=4.011(2) and c=8.261(3) Å with final R/Rw=6.4/6.9 %. The superstructure with asuper=2a, bsuper=6b and csuper=2c was found. The measurements of electronic and magnetic properties of this compound indicate that it is an electronic insulator and diamagnet.