• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.229-230
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• 2008

We have studied the structural and optical properties of ZnO thin film deposited on glass by RF magnetron sputtering as functions of working pressures. The grain sizes were decreased as the working pressures were increased. The average optical transmissions over all exceeded 80% for ZnO films deposited in 20, 25 and 300m torr working pressures. And the transmission spectra patterns were almost same. While the transmission spectra pattern of ZnO film deposited in 35nm torr was different with other spectra patterns obtained in 20, 25 and 30nm torr working pressures.

• 열처리공학회지
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• 제26권6호
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• pp.288-292
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• 2013

We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural, electrical and optical properties of GZO/$TiO_2$ thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron's irradiation energy. The electron irradiated GZO/$TiO_2$ films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/$TiO_2$ films irradiated at 900 eV shows the lowest resistivity of $4.3{\times}10^{-3}{\Omega}cm$. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18 eV in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.146-147
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• 2008

In this paper we report upon an investigation into the effect of sputter RF power on the electrical properties of Gallium doped zinc oxide (ZnO:Ga) film. Structural, electrical and optical properties of the ZnO:Ga films were investigation in terms of the sputtering power. Working pressure fixed in 5 mtorr and RF powers the variable did with 50~100 W. The result, We were able to without substrate temperature obtain resistivity of $9.3\times10^{-4}{\Omega}cm$ and optical transmittance of 90%.

• 열처리공학회지
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• 제27권5호
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• pp.225-229
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• 2014

The influence of electron irradiation energy(eV) on the structural, electrical and optical properties of ITO/ZnO bi-layered films prepared with RF magnetron sputtering has been investigated. The ITO/ZnO show the lowest resistivity of $2.8{\times}10^{-4}{\Omega}cm$. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film irradiated at 900 eV shows 82---- of optical transmittance in this study. By comparison of figure of merit, it was observed the optical transmittance and electrical resistivity of the films were dependent on the electron irradiation energy and optoelectrical performance of ITO/ZnO film is improved with electron irradiation.

• 열처리공학회지
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• 제29권3호
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• pp.109-112
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• 2016

We have considered the influence of electron irradiation on the optical and electrical properties of $SnO_2$ thin films deposited with reactive RF magnetron sputtering. After deposition, the films electron irradiated at 300 eV shows a lower sheet resistance of $277{\Omega}/{\square}$ and the optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 400 eV shows a higher optical transmittance of 82.6% in this study. By comparison of figure of merit, it is concluded that the post-deposition electron irradiation at 300 eV is the optimum condition for the enhancement of opto-electrcal performance of $SnO_2$ thin film in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.184-185
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• 2007

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

• 한국표면공학회지
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• 제31권5호
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• pp.251-260
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• 1998

Stainless Steel is being used widely for various purposes due to its good corrosion resistance. There have been many researches to produce colored stainless steel by several methods such as anodizing and ion-plating. In this experiment, we $Ti_XN$(C,O) on the films SUS304, aluminium, and glass substrates with DC magentron sputterinng system made by Leybold Hereus, and strdied the structur, corrsion and pit characture of the TiXN observed by TeM image was black and whink and white columnar hed a very fine(200$\AA$) dense sturcture,and the diffraction resistance at the $3{\times}10_6A/\textrm{cm}^2$ and $10_{10}\times{cm}^2$current density were obtained in the under-stoichiometry $Ti_xN$ compound of Ar/$N_2$(Ar:$N_2$=100:6, titanium-rich compound) and the over-stoichiometry compound of Ar/$N_2$((Ar:$N_2$=60:15) respectively. When the thiness was over 1.64$\mu\textrm{m}$, good pit resistance could be obtained and its improvement was especially affected by perfect surfaceface. Typical TiN anodic polarzation curves of very unstable corrosion were observed by $Ti_xN$ film on the glass and perfect film of 3.28$\mu\textrm{m}$ thickness.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.87-90
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• 1998

ABSTRACT- we have analyzed the effect of microstructure and interface conditions on the anisotropic exchange filelds of NiO/NiFe bilayers. The NiO films were deposited by R.F. magentron sputtering. By using different atgon pressure NiO Films, Grain Size And Surface Roughness Of NiO can be manipulated. The exchange field is enhanced in the small granined NiO And This Increment Is Based On The Formation Of Small Domains In NiO

• 한국표면공학회지
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• 제30권4호
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• pp.255-261
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• 1997

Thin film batteries can be used as a micro power source for electronic in which minute power is needed. In this study, lithium phosphorous oxynitride(LIPON) thin films were deposited as an eletrolyte for lithium ion batteries using RF magentron sputtering of lithium phosphate in N2. Ti was also added into the LIPON films as a second network former to enhance the ioinc conductivity of the films. The optimum conditions for LIPON film deposition were sought and the electrolyte with the conductivity of $2.5 \times 10^{-6}$S/cm was obtained at the condition of RF power 4.4 W/$\textrm{cm}^2$, process pressure 10 mtorr and pure nitrogen ambience. Furthermore, the conductivity of LIPON films was increased from $2.5 \times 10^{-6}$S/cm to $8.6 \times 10^{-6}$S/cm by the doping of 2.4at.% Ti. It was also found that by adding Ti to LIPON films, Li content was increased and nitrogen content that reported having the cross-linking effect on LIPON films was also increased as confirmed XPS.