• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.112-112
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• 1998

• Journal of Surface Science and Engineering
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• v.41 no.2
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.97-100
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• 1990

Diamond thin films were synthesized by the MPECVD (Microwave Enhanced Chemical Deposition) using the mixture of the hydrogen and organic compounds($CH_3COCH_3$, $CH_3OH$). In X-ray Diffraction, the d values of all the deposits on the Si substrates with the experimental conditions coincide with those of natural diamond in POD (Powder Diffraction Data). The changes of the morphology of all the deposits were examined by SEM. The amount of amorphous carbon or graphite in the diamond films were increased as the acetone concentration was increased. The morphology of the diamond particles can be changed from ball-like to euhedral by adding the small amount of the methanol in the reaction gases of the high acetone concentration.

• Journal of Surface Science and Engineering
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• v.28 no.4
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• pp.225-235
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• 1995

To investigate the effects of pretreatment and substrate bias on the characteristics of the diamond thin films, the thin films were deposited on the p-type Si(100) wafer by MPECVD using mixtures of $H_2$, $CH_4$, and $O_2$ gases. Deposition was carried out at the substrate temperature of $900^{\circ}C$ and at the pressure of 40torr. The effect of the pretreatment on the film formation was the examined by using SiC and diamond powders as abrasive powders. Furthermore, the substrate bias effect on the formation of the diamond film was also examined. The highest nucleation density was observed for the pretreatment with 40~60$\mu\textrm{m}$ size of diamond powders and a negative bias potential(-50V). Many defects and(111) twins in the diamond films were observed.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.365-373
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• 1997

다이아몬드 형성에 미치는 MPECVD 증착조건에 관하여 연구하였다. 증착 실험 기판은 Si p-type (100)wafer를 사용하였으며 다이아몬드 박막은 다음과 같은 조건하에서 증착되었다. 메탄 농도:0.75%(3scm)-3%(12scm),산소 농도:0%-0.5%(2scm), 반응 압력:20torr-80torr, 반응 온도:$600^{\circ}C$-90$0^{\circ}C$. 낮은 증착온도($600^{\circ}C$)에서는 (100)의 우선성장면을 보였고 온도가 증가함에 따라 (100)과 (111)이 혼재된 cubo-octahedron이 형성되었고 90$0^{\circ}C$에서는 (111)의 우선성장면을 가징 octahedron이 형성되었다. 산소가 첨가됨에 따라 높은 메탄농도에서도 양질의 다이아몬드가 형성되었다. 낮은 압력하(200torr)에서는 비정질탄소가, 높은 압력하(80torr)에서는 양질의 다이아몬드가 형성되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.137-138
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.62-62
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.154.1-154
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.76-76
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.92-99
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• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.