• Progress in Medical Physics
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• v.17 no.1
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• pp.17-23
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• 2006

In Vivo dosimetry is a method to evaluate the radiotherapy; it is used to find the dosimetric and mechanical errors of radiotherapy unit. In this study, on-line In Vivo dosimetry was enabled by measuring the skin dose with MOSFET detectors attached to patient's skin during treatment. MOSFET dosimeters were found to be reproducible and independent on beam directions. MOSFET detectors were positioned on patient's skin underneath of the dose build-up material which was used to minimize dosimetric error. Delivered dose calculated by the plan verification function embedded in the radiotherapy treatment planning system (RTPs), was compared with measured data point by point. The dependency of MOSFET detector used in this study for energy and dose rate agrees with the specification provided by manufacturer within 2% error. Comparing the measured and the calculated point doses of each patient, discrepancy was within 5%. It was enabled to verify the IMRT by using MOSFET detector. However, skin dosimetry using conventional ion chamber and diode detector is limited to the simple radiotherapy.

• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.159-160
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• 2013

본 논문에서는 연료전지를 사용하여 2차 전지를 충전시키는 동기식 부스트 컨버터를 제어하는 방식을 제안한다. 고효율을 위한 동기식 부스트 컨버터는 기존의 부스트 컨버터의 다이오드 대신 MOSFET을 사용한다. 이때 연료전지의 전압이 배터리의 전압보다 낮기 때문에 양방향 소자인 MOSFET의 특성상 DCM구간에서 역전류가 발생한다. 연료전지의 긴 기동시간으로 인해 초기 동작 시 소프트 스타트가 필요한데 이때 역전류가 발생할 수 있는 DCM구간이 나타난다. 시스템 제어를 위해 사용된 mode boundary detector은 CCM과 DCM을 구분해주어 컨버터를 제어한다. CCM구간에서는 동기식으로 부스트 컨버터가 동작되고 DCM구간에서는 기존의 다이오드를 사용하는 방식으로 역전류를 방지한다. 시뮬레이션을 통해 논문의 타당성을 증명하였다.

• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.430-432
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• 2005

저에너지 중성자가 가톨리늄(Gd) 막에 입사되면 중성자 포획과정에서 전환전자가 생성된다. 이 전환전자에 의해 pMOSFET $SiO_2$ 산화층에서 발생된 전자-전공쌍이 발생되고, 이 가운데 정공은 산화층 내부에 쉽게 붙잡혀(Trap) 양전하 센터로 작용하게 된다. 이 축적된 전하는 pMOSFET의 문턱전압(Threshold voltage)을 변화시킨다. 본 연구에서는 이러한 간접측정 원리를 이용하여 열중성자를 실기간 탐지할 수 있는 반도체형 탐지소자를 개발하고 하나로(HANARO) 방사선장에서의 시험을 통해 성능을 검증하였다. 그리고 감도관련 변수의 최적화를 통하여 작업자가 사용 가능한 범위의 고감도 열중성자 선량계로 개선 제작하였다. 개발된 선량계는 소형으로 실시간 열중성자 측정이 가능하며 감마방사선으로부터 독립적으로 열중성자를 측정할 수 있는 장점도 지니고 있다.

• ETRI Journal
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• v.35 no.3
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• pp.431-438
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• 2013

This paper presents a new realization of the implicit root-mean-square (RMS) detector, employing three second-generation current conveyors and MOS transistors. The proposed circuit can be applied in measuring the RMS value of complex, periodic signals, represented in the form of the Fourier series. To verify the theoretical analysis, circuit Simulation Program with Integrated Circuit Emphasis simulations and experiment results are included, showing agreement with the theory.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.295-296
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• 1998

With xeroradiography appearance, DR (Digital Radiography) system have been studying for X-ray detection using photoreceptor. Also detection method for receptor charge change have been developing variably. We use photoreceptor material of a-Se(Amorphous Selenium) with high DQE, high SNR(Signal to Noise Ratio) and high transformation efficiency of X-ray signals into electrical signals. After a-Se receptor is uniformly charged by using Arc discharge, X-ray is exposed. Then a-Se receptor produce subtle charge variation and MOSFET detect charge variations. The detected signal pass A/D converter and signal processing by PC. As results, the initial voltage is 8V. It has wide dynamic range needed digital radiography system. In this study, we obtained data with changing kVp(tube potential voltage) and fixed 8mAs(tube current by exposure time) in X-ray system. However MOSFET detector for X-ray signal is not tested X-ray mAs variations. But if MOSFET detector is tested X-ray mAs variation and exactly calibrated multichannel is made and noise-reduction is done, suitable DR system readout method will be done.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.278-280
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• 2005

원자력발전소 내 원자로의 유지보수 작업을 수행하는 수중로봇은 고준위 방사선에 노출되고, 이로 인해 전자 장치의 오동작 및 고장이 유발될 수 있다. 따라서 허용 방사선량을 초과하지 않도록 피폭되는 누적 방사선량을 실시간으로 모니터링하는 장치가 필수적이다. 본 연구에서는 펄스형의 SiC 포토 다이오드와 선량 기억형인 MOSFET를 다중 방사선 센서로 사용하여 넘은 범위의 방사선 준위의 측정이 가능하고 측정 신뢰도가 향상된 고준위 방사선 측정기를 구현하였다. 이 장치는 측정 원리가 상이한 두 센서를 동일한 방사선 측정에 이용함으로써 방사선 측정의 안정성과 정확성이 향상된 것이 특징이다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1027-1033
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• 2013

In this work, a D-band imaging detector has been developed in a 65-nm CMOS technology for high frequency imaging application. The circuit was designed based on the resistive self-mixing of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 400 V/W and minimum NEP of 100 $pW/Hz^{1/2}$ at 145 GHz. The chip size is $400{\mu}m{\times}450{\mu}m$ including the probing pads and a balun, while the core of the circuit occupies only $150{\mu}m{\times}100{\mu}m$.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• Progress in Medical Physics
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• v.29 no.4
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• pp.164-172
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• 2018

We evaluated the performance of various detectors for small-field dosimetry with field sizes defined by a high-definition (HD) multileaf collimator (MLC) system. For small-field dosimetry, diodes referred to as "RAZOR detectors," MOSFET detectors, and Gafchromic EBT3 films were used in this study. For field sizes less than $1{\times}1cm^2$, percent depth doses (PDDs) and lateral profiles were measured by diodes, MOSFET detectors, and films, and absolute dosimetry measurements were conducted with MOSFET detectors. For comparison purposes, the same measurements were carried out with a field size of $10{\times}10cm^2$. The dose distributions were calculated by the treatment planning system Eclipse. A comparison of the measurements with calculations yielded the percentage differences. With field sizes less than $1{\times}1cm^2$, it was shown that most of the percentage difference values were within 5% for 6-MV and 15-MV photon beams with the use of diodes. The measured lateral profiles were well matched with those calculated by Eclipse as the field sizes increased. Except for the depths of 0.5 cm and 20 cm, there was agreement in terms of the absolute dosimetry within 10% when MOSFET detectors were used. There was good agreement between the calculations and measurements conducted using diodes and EBT films. Both diode detectors and EBT3 films were found to be appropriate options for relative measurements of PDDs and for lateral profiles.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2006.08a
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• pp.85-85
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• 2006