• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 추계학술대회 논문집
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• pp.226-227
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• 2016

본 논문은 SiC Mosfet Gate Driver에서 Overcurrent상황 발생시 Mosfet 양단의 전압을 검출함으로써 스위칭 소자를 보호하는 Desaturation detction circuit에 대해 다룬다. IGBT와 다르게 SiC Mosfet의 경우 ohmic 영역과 saturation영역의 구분이 명확하지 않기 때문에 과전류 발생시 Mosfet 양단 전압을 검출하는데 어려움이 있다. 따라서 이를 보완하기 위하여 Mosfet drain측에 새로운 회로를 추가로 설계함으로써 이를 보완하여 효과적으로 양단전압을 검출한다.

• 한국위성정보통신학회논문지
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• 제8권3호
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• pp.10-14
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• 2013

본 논문에서는 저전력 기술인 DVFS (Dynamic Voltage Frequency Scaling) 응용을 위하여, 동작주파수의 변화에도 소비전력이 일정한 특성을 갖는 전류모드 회로를 적용함에 있어서, 저속 동작에서 소비전력이 과다한 전류모드 회로의 문제점을 전류모드 회로에서 sub-threshold 영역 동작의 MOSFET을 적용함으로써 소비전력을 최소화하는 설계기술을 소개한다. 회로설계는 MOSFET BSIM 3모델을 사용하였으며, 시뮬레이션한 결과, strong-inversion 동작일 때 소비전력은 $900{\mu}W$이었으나, sub-threshold 영역으로 동작하였을 때, 소비전력이 $18.98{\mu}W$가 되어, 98 %의 소비전력의 절감효과가 있음을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 B
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• pp.1292-1294
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• 1996

The general output circuit for PWM output is pushpull using a complimentary MOSFET. The gate driver coupled directly at gate can switch easy upto a high frequency. However, a high reverse recovery current and parastic components make a oscillation output. This paper analyses this phenomenon and proposes a novel output circuit preventing the oscillation.

• 전력전자학회논문지
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• 제26권6호
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• pp.429-436
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• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• 산업기술연구
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• 제27권B호
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• pp.15-20
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• 2007

This paper presents the new design method for the gate driver circuit of the floating MOSFET by using the pulse transformer. Each parameters of the proposed circuit are delivered by the numerical calculation method. By considering inner characteristics of MOSFET, the gate driver makes to increase the efficiency of the power conversion and decrease operating heat. Computer simulations and to experimental results for a Buck Converter are presented in order to validate the proposed method.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 추계학술대회 논문집
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• pp.89-90
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• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• 전력전자학회논문지
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• 제8권1호
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• pp.40-47
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• 2003

A low-cost current-sensing scheme for the motor drives with MOSFET is described. Many motor drives usually employ the common current sensors to measure current for the purpose of control or protection. These current sensors, however, significantly burden the power circuit with the size and cost. The proposed current-sensing scheme utilizes information concerning MOSFET's On-voltage and On-resistance. An analogue circuit detecting On-voltage can overcome the above disadvantages because the circuit is small and is made at a low cost, and the fuzzy inference for On-resistance is also simply designed based on MOSFET's characteristics. The validity of this scheme will be experimentally verified by adopting the current control of a battery car.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.509-509
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• 2000

The circuit is designed for improving the relationship between input voltage and output current of the MOS transistor, which is square function. This circuit can be used instead of n-channel MOSFET at once. The circuit consists of MOSFET, which acts as a voltage receiver. The source of MOSFET is connected to current control part which consist of bipolar transistors. The exponential characteristic of bipolar transistor is used to solve the square function of MOSFET that base on concept of log and anti-log circuit. The experimental results of simulation are agreed with the implemented circuit.

• 전력전자학회논문지
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• 제26권3호
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• pp.214-221
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• 2021

SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.

• 전자공학회논문지D
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• 제36D2호
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• pp.71-80
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• 1999

본 논문에서는 2${\mu}m$ 고전압 CMOS 공정을 사용한 보호 회로를 포함한 전력 ,MOSFET 구동기를 설계하였다. 제어 회로의 안정한 동작을 위하여 전원 관리 회로를 설계하였으며 전원 관리 회로의 전압 레귤레이터의 보호를 위하여 전압 검출 방식의 단락 보호 회로를 제안하였다. 전압 검출 방식(Voltage-Detection Short Circuit Protection; VDSCP)은 직렬 저항에 의한 전압 강하가 없고, 출력단 단락 상태에서 전압원의 전류를 출력단에 흐르지 못하도록 하는 특성이 있다. 전력 MOSFET를 보호하기 위하여 부하 단락 보호회로, 게이트 전압 제한 회로, 과전압 보호 회로를 설계하였으며, 50V의 항목 전압을 닺는 공정을 이용하여 전력 MOSFET 구동기를 위한 2${\mu}m$ 고전압 CMOS 공정을 개발하였다. 전력 MOSFET이 소비하는 전력 이외에 구동기가 소비하는 전력은 전력 MOSFET 구동 상태에 따라 20 ~ 100mW의 범위에 있는 것으로 확인하였다. 주문형으로 제작된 전력 MOSFET 구동기의 active area의 크기는 $3.5 {\times}2..8mm^2$이다.