• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.59-65
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• 2014

Two input resistances converted from $S_{11}$-parameter and $Z_{11}$-parameter of MOSFETs with various gate finger numbers Nf were measured in low frequency region. The 1/Nf dependent input resistance from $S_{11}$-parameter exhibits much lower values than that from $Z_{11}$-parameter in the range of $Nf{\leq}64$. This 1/Nf dependence was theoretically verified by using Nf dependent nonlinear equation derived from a MOSFET equivalent circuit.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1910-1915
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• 2007

An accurate and simple method to extract equivalent circuit parameters of fully-depleted silicon-on-insulator MOSFETs small-signal modeling operating at RF frequencies including the non-quasi static effects is presented in this article. The advantage of this method is that a unique and physically meaningful set of intrinsic equivalent circuit parameters is extracted by de-embedding procedure of extrinsic elements such as parasitic capacitances and resistances of MOSFETs from measured S-parameters using simple Z- and Y- matrices calculations. The calculated small-signal parameters using the presented extraction method give modeled Y-parameters which are in good agreement with the measured Y-parameters from 0.5 to 20GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.2
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• pp.9-14
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• 2012

In this study, multi-finger RF MOSFET substrate parameters are accurately extracted by using S-parameters measured from common source-bulk and common source-gate test structures. Using this extraction method, the accuracy of an asymmetrical model with three substrate resistances is verified by observing better agreement with measured Y-parameters than a simple model with a single substrate resistance. The modeled S-parameters of the asymmetrical model also show excellent agreement with measured ones up to 20GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.1-7
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• 2010

The device performances of accumulation-mode Pi-gate pMOSFETs with different fin widths have been characterized at high operating temperatures. The device fin height is 10nm and fin widths are 30nm, 40nm, and 50nm. The variation of the drain current, threshold voltage, subthreshold swing, effective mobility, and leakage current have been investigated as a function of operating temperatures. The drain current at high temperature is slightly larger than at room temperature. The variation of the threshold voltage as a function of the operating temperature is smaller than that of the inversion-mode MOSFETs. The effective mobility is decreased with the increase of operating temperature. It is observed that the effective mobility is enhanced as the fin width decreases.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.1-6
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• 2004

Effective gate resistance, extracted by direct extraction method, is analyzed among various gate length, in nanoscale MOSFET for RFIC. Extracted effective gate resistance is compared to measured data and verified with simplified model. Extracted parameters are accurate to 10GHz. In the same process technology effect has a different kind of gate voltage dependency and frequency dependency compared with general effective gate resistance. Particularly, the characteristic of effective gate resistance before and after threshold voltage is noticeable. When gate voltage is about threshold voltage, effective gate resistance is abnormally high. This characteristic will be an important reference for RF MOSFET modeling using direct extraction method.

• Journal of Radiation Protection and Research
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• v.31 no.4
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• pp.165-171
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• 2006

In Korea, a real-time effective dose measurement system is in development. The system uses 32 high-sensitivity MOSFET dosimeters to measure radiation doses at various organ locations in an anthropomorphic physical phantom. The MOSFET dosimeters are, however, mainly made of silicon and shows some degree of energy and angular dependence especially for low energy photons. This study determines the correction factors to correct for these dependences of the MOSFET dosimeters for accurate measurement of radiation doses at organ locations in the phantom. For this, first, the dose correction factors of MOSFET dosimeters were determined for the energy spectrum in the steam generator channel of the Kori Nuclear Power Plant Unit #1 by Monte Carlo simulations. Then, the results were compared with the dose correction factors from 0.652 MeV and 1.25 MeV mono-energetic photons. The difference of the dose correction factors were found very negligible $(\leq1.5%)$, which in general shows that the dose corrections factors determined from 0.662 MeV and 1.25 MeV can be in a steam general channel head of a nuclear power plant. The measured effective dose was generally found to decrease bit $\sim7%$ when we apply the dose correction factors.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.825-828
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• 1992

In this paper, a Hybrid method for an effective channel length($L_{eff}$) on lightly doped drain(LDD) MOSFET's is proposed. In order to investigate the difference of the gate bias and substrate bias defendence of the $L_{eff}$ among various LDD structures, the $L_{eff}$ of the LDD's are extensively examined using simulations and measurement. one group is proposed for conventional MOSFET and the other group Is proposed for LDD MOSFET. It is shown that the $V_{bs}$-dependence of the n-region is different from $V_{gs}$-dependence of it.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.159-162
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• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.