• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.207-210
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• 1996

This paper describes the analysis of the operation of the switched snubber in order to depress the surge voltage in the MOS-FET inverter. In this paper, the N-channel MOS-FET which operates faster than the P-channel MOS-FET was used for the inverter circuit. So, the inverter and switched snubber can operate at high-frequency in the order of MHz. The cause of generating the surge voltage in the high frequency inverter has been cleared, and then how to depress the surge voltage using the switched snubber consisting of an N-channel MOS-FET has been given. Furthermore, described is the power loss within the switched snubber which is made of an N-channel MOS-FET. The inverter having the N-channel MOS-FET used as a switched snubber can drive such a low impedance load such as mega-sonic transducer for a mega-sonic studied cleaner sufficiently.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.255-258
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• 1996

This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

• Proceedings of the KIEE Conference
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• 1984.07a
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• pp.30-32
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• 1984

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.87-90
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• 1995

When the ultrasonic transducer operating at l MHz for use in cleaning semiconductor wafers or other industsrial materials is driven from the MOS-FET DC-to RF inverter, the output power severely depends on the frequency of operation since the quality factor of the transducer is high. In order to tune to the eresonating frequency of the ultrasonic transducer, the drive signal frequency of the MOS-FET power inverter is automatically scananed until the frequency is set at the resonating frequency of the ultrasonic transducer is maximized. The control circuit consists of an output power sensing circuit, a PLL controller, a frequency standard, and other peripheral circuits. The operation was satisfactory when the transducer having an output of 600 W at 1 MHz was used.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.49-54
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• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8B
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• pp.1469-1476
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• 2000

We have to consider the drain current as consisting of two components the vertical electric field and the longitudinal electric field because the drain current is almost totally due to the presence of drift in strong inversion of n-MOS FET. Especially the mobility of electrons in the inversion layer is smaller than the bulk mobility because the vertical electric field component that is generated by the effect of the gate voltage is perpendicular to the direction of normal current flow. By the multi-box segmentation technical method that are proposed in this paper we calculated the inversion layer depth and analyzed the vertical electric field component which has an large influence on mobility model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.707-711
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• 2013

Carbon nanotubes(CNT) has strength and chemical stability, greatly conductivity characteristics. In particular, MWCNT (multi-walled carbon nanotubes) show rapidly resistance sensitive for changes in the ambient gas, and therefore they are ideal materials to gas sensor. So, we fabricated NOx gas sensors structured MOS-FET using MWCNT (multi-walled carbon nanotubes) material. We investigate the change resistance of NOx gas sensors based on MOS-FET with ultra lean NOx gas concentrations absorption. And NOx gas sensors show sensitivity on the change of gate-source voltage ($V_{gs}=0[V]$ or $V_{gs}=3.5[V]$). The gas sensors show the increase of sensitivity with increasing the temperature (largest value at $40^{\circ}C$). On the other hand, the sensitivity of sensors decreased with increasing of NOx gas concentration. In addition, We obtained the adsorption energy($U_a$), $U_a$ = 0.06714[eV] at the NOx gas concentration of 8[ppm], $U_a$ = 0.06769[eV] at 16[ppm], $U_a$ = 0.06847[eV] at 24[ppm] and $U_a$ = 0.06842[eV] at 32[ppm], of NOx gas molecules concentration on the MWCNT gas sensors surface with using the Arrhenius plots. As a result, the saturation phenomena is occurred by NOx gas injection of concentration for 32[ppm].

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.107-113
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• 2016

All circuits in power input can only use the power provided by an external power supply. General electronic circuits use a secondary supply generated by a converter using a primary power in the power input. But protection and detection circuit for over-voltage circuit or under-voltage in power input have to use that input power because there is no other supply in power input. Therefore, previous electronics for satellite can protect only over-voltage using a zener diode, and can't detect over-voltage and under-voltage events, and provide a detection capability for over-voltage and under-voltage only for secondary supply. The proposed circuit can detect over-voltage and under-voltage using a single supply for the primary power input, +28V, with the threshold characteristics for MOS-FET, and the accuracy for a detection circuit is increased by 2.5%.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• ETRI Journal
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• v.6 no.3
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• pp.37-42
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• 1984