• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.21-34
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• 2000

Millimeter wave is expected as the unlimited useful frequency resources for the next generation wireless communication services. In the past, its usage was limited to the military warfare due to lack of millimeter devices. The development of GaAs pHEMT in 1980 and the progress in the processing technologies made the new consumer wireless services possible utilizing millimeter waves. Specially, most of passive components necessary for circuit design can be integrated with GaAs pHEMTs and this removes the difficulty in assembly unavoidable in hybrid design. InP based pHEMTs developed later possess all the properties of GaAs and it shows many advantages in higher frequency applications. In this paper, the status and trends of those devices and MMICs are presented and the future developing trends is also described.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1595-1599
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• 2001

In this paper, we have desired and implemented of ASK modulator MMIC operating at 5.8 GHz for OBE used in AGPS(Automatic Gate Passing System). The proposed ASK modulator MMIC was implemented to apply a single supply voltage of 3 V to the drain in order to decrease ACP(Adjacent Channel Power). As a result, it is exhibits a broad linear modulation range from 0.7 V to 3 V and an On/off characteristic over 40 dB. The layouts of ASK modulator MMICs was designed and fabricated by using ETRI 0.57m MESFET library The chip size was 1.0mm $\times$x1.0mm.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.6
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• pp.129-135
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• 2022

In this paper, a 100 W SSPA in Ka-band was developed by combining 16 GaN MMICs which were 10 W amplifiers, respectively. The gate voltage of SSPA was controlled to minimize the effect of SSPA noise on the receiver during the receiving time. And the transmit power could be reduced about 20 dB to prevent the receiver from being saturated by a large signal from a nearby target. At 10%, 40% duty rato, the peak power and the power efficiency at center frequency were measured 52.4 dBm, 19.2%, and 51.6 dBm, 16.6% respectively.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.135-145
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• 2006

This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.7-11
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• 2007

In this paper, we proposed the dual-mode stepped impedance ring resonator bandpass filter for MMIC (Microwave Monolithic Integrated Circuit) applications using the dielectric-supported air-gapped microstrip line (DAML). The ring resonator fabricated by surface micromachining technology. This filter consists of a DAML resonator layer and a CPW feed line. The DAML ring resonator is elevated with $10{\mu}m$ height from GaAs substrate surface. This bandpass filter is $1-{\lambda}g$ type stepped impedance ring resonator including dual-mode resonance. From the measurements, we obtained attenuation of over 15 dB and insertion loss of 2.65 dB at the center frequency of 97 GHz. Relative bandwidth is about 12 % at 97 GHz. Furthermore, the proposed bandpass filter is useful to integrate with conventional MMICs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.760-767
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAMLs. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAMLs ring resonator is elevated with $10{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about $10\%$ at 60 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.101-109
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• 2006

A broadband, DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by adding transmission lines in the conventional Switched-T attenuator and optimizing the transmission line parameters. Momentum simulation was performed in design for accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify the performance stability against the MMIC process variation. The attenuator has been fabricated with $0.15\;{\mu}m$ GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic ranges. High attenuation accuracy has been achieved over all attenuation ranges and 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies. The measured IIP3 of the attenuator is 33 dBm.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.19-26
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• 2004

High performance packages must provide excellent transmission characteristics. In face-up ceramic packages, however, parasitic characteristics of bondwires are not negligible at millimeter-wave frequencies. Consequently, the electrical performance of ceramic packages is degraded. In をis paper, we propose a new millimeter-wave ceramic package feed-through having Embedded Metal Sheets (EMS). The package that contains double-bondwire interconnections is analyzed by the FEM (Finite Element Method) and measured from 20 to 50GHz. As a result, the proposed package having Embedded Metal Sheets (EMS) achieved 0.85dB, 0.4dB insertion loss improvement on the conventional and the double bondwires buried in epoxy ( $\varepsilon_{{\gamma}}$/ = 4) ceramic package respectively to 47GHz. This improved ceramic package will be useful for MMICs modules and small ceramic packages developments.amic packages developments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.294-301
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• 2000

One of the most important design parameters in a microwave radio transmitting system is to reduce spurious response from the output spectrum of the transmitting system. A Local oscillator (LO) is seldom totally pure and at the least contain some LO harmonic signals. A LO or any oscillator is a transmitter if provided with a suitable radiator, conduction, or leakage path. Where mixer is employed in the output of the LO mixer generated spurs can be increased by RF amplifier. To reduce LO leakage, notch filter or band pass filter has been conventionally used. In this paper, the leakage reduction(LR) signal, which has the same magnitude and the opposite phase with respect to LO leakage signal, is added to the output of mixer of the wireless LAN system. The LO leakage is reduced by 30 dB more than the conventional methods do. The proposed method is potentially suitable for low-cost, reliable, and simple application of monolithic microwave integrated circuits (MMICs)