• Journal of The Geomorphological Association of Korea
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• v.20 no.1
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• pp.57-74
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• 2013

Coastal terrace was developed at 8.3m height near Waon village in Suncheon-si. Due to the sandgravel layer deposited in a different today's environments, rounded gravel(4.3m, 5.8m, 6.3m) sequentially in a cross-section of coastal terrace, so it provides a good example which understand Holocene sea level changes to determine the effect on the various climatic-environments traits. For the purpose of identifying the morphogenetic process, Profile description, Grain size, XRD, Thin section analysis was attempted. As a result, coastal terrace are more likely to have been formed by the more recent period rather than the last interglacial(MIS 5 period), and at that time, various pedological features are considered to be formed.

• The Korean Journal of Quaternary Research
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• v.17 no.2
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• pp.165-165
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• 2003

A borehole core ECSDP-102 (about 68.5 m long) has been investigated to get information on paleoenvironmental changes in response to the sea-level fluctuations during the period of late Quaternary. Several AMS $\^$14/C ages show that the core ECSDP-102 recorded the depositional environments of the northern East China Sea for approximately 60 ka. The Yangtze River discharged huge amounts of sediment into the northern East China Sea during the marine isotope stage (MIS) 3. In particular, $\delta$$\^$13/Corg values reveal that the sedimentary environments of the northern East China Sea, which is similar to the Holocene conditions, have taken place three times during the MIS 3. It is supported by the relatively enriched $\delta$$\^$13/Corg values of -23 to -21$\textperthousand$ during the marine settings of MIS 3 that are characterized by the predominance of marine organic matter akin to the Holocene. Furthermore, we investigated the three Holocene sediment cores, ECSDP-101, ECSDP-101 and YMGR-102, taken from the northern East China Sea off the mouth of the Yangtze River and from the southern Yellow Sea, respectively. Our study was focused primarily on the onset of the post-glacial marine transgression and the reconstructing of paleoenvironmental changes in the East China Sea and the Yellow Sea during the Holocene. AMS $\^$14/C ages indicate that the northern East China Sea and the southern Yellow Sea began to have been flooded at about 13.2 ka BP which is in agreement with the initial marine transgression of the central Yellow Sea (core CC-02). $\delta$$\^$18/O and $\delta$$\^$13/C records of benthic foraminifera Ammonia ketienziensis and $\delta$$\^$13/Corg values provide information on paleoenvironmental changes from brackish (estuarine) to modem marine conditions caused by globally rapid sea-level rise since the last deglaciation. Termination 1 (T1) ended at about 9.0-8.7 ka BP in the southern and central Yellow Sea, whereas T1 lasted until about 6.8 ka BP in the northern East China Sea. This time lag between the two seas indicates that the timing of the post-glacial marine transgression seems to have been primarily influenced by the bathymetry. The present marine regimes in the northern East China Sea and the whole Yellow Sea have been contemporaneously established at about 6.0 ka BP. This is strongly supported by remarkably changes in occurrence of benthic foraminiferal assemblages, $\delta$$\^$18/O and $\delta$$\^$13/C compositions of A. ketienziensis, TOC content and $\delta$$\^$13/Corg values. The $\delta$$\^$18/O values of A. ketienziensis show a distinct shift to heavier values of about 1$\textperthousand$ from the northern East China Sea through the southern to central Yellow Sea. The northward shift of $\^$18/O enrichment may reflect gradually decrease of the bottom water temperature in the northern East China Sea and the Yellow Sea.

• Journal of the Korean Society of Marine Environment & Safety
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• v.19 no.2
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• pp.164-170
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• 2013

With the introduction of increasingly large-sized ships, the conditions of main domestic port facilities remain the same as in the past. So, there is high probability that marine traffic congestion can occur at the certain ship's routes. The standard ship's length used to assess the marine traffic congestion of domestic trade port is 70 meters. It has been in use for the last 30 years, so, its usefulness is highly recommended for review. This study deeply analyzes the tendency of ship's dimensional changes according to recent enlargement of ship's size by utilizing the particulars of 60,000 ships saved in domestic Port-MIS database and suggests the standard ship's length by figuring out the correlation between length of ship and gross tonnage. In addition, the basis of statistical data on the ship's tonnage in domestic trade over the last five years suggests the standard ship's length by deriving the reference point of cumulative incidences that occupy more than over 50 %, except for small vessels. It is necessary to consider the characteristic of each domestic trade port before the actual application of suggested standard ship's length.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.8-13
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• 2007

In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

• Information Systems Review
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• v.5 no.2
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• pp.23-36
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• 2003

This study proposed the approaches to business process redesign and business network redesign in e-business environment through the case analysis of e-Transformation performed in Kolon Gloteck, Inc. which has been managed and operated in a traditional mode. The proposed e-Transformation approaches of the traditional firm in this study were as following: 1) Network-focused business process redesign; 2) Introducing ERP(Enterprise Resource Planning) as e-Business backbone; 3) Establishing transparence of business functions through using shared database; 4) Understanding customer and constructing IT(Information Technology) infrastructure for customer satisfaction; 5) Performing data and process standardization; 6) Applying the best suitable IT(Information Technology) such as JSP(Java Server Pages) and VPN(Virtual Private Network). The findings of this case study are thought to be useful as a practical guideline in carrying, out e-Transformation of the typical traditional firm and to provide significant basis for constructing the theoretical framework of e-Transformation methodology.

• Journal of The Geomorphological Association of Korea
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• v.26 no.4
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• pp.81-96
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• 2019

The Yeongdeok 53m marine terrace (Y₅₃mT), Y₄₃mT, Y₃₃mT, Y₂₄mT, Y₁₉mT and Y₁₁mT distributed along the Yeongdeok coast, southeastern Korean Peninsula are well compared with the thalassostatic terraces of the high terrace 1 (ℓHT₁ ; 51m of the relative heights from the river floor), high terrace 2 (ℓHT₂ ; 43m), middle terrace 1 (ℓMT₁ ; 32m), middle terrace 2 (ℓMT₂ ; 25m), lower terrace 1 (ℓLT₁ ; 18m) and lower terrace 2 (ℓLT₂ ; 10m) respectively, developed along the lower reaches of the Chucksan-cheon and Obo-cheon rivers, judging from the comparison of paleosols (red soils) between the above marine and thalassostatic terraces. Using the Y₁₉mT of the MIS 5e as the key surface, we propose that the terraces of the Y₅₃mT and ℓHT₁, Y₄₃mT and ℓHT₂, T₃₃mT and ℓMT₁, Y₂₄mT and ℓMT₂, Y₁₉mT and ℓLT₁, and Y₁₁mT and ℓLT₂ have been formed at the MIS 11, 9, 7e and 7a (or 7a), 5e and 5a respectively. The red soils have been developed at the Y₁₉mT and ℓLT₁ and above them, but not on the Y₁₁mT and ℓLT₂ surfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Journal of the Korea Society of Computer and Information
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• v.28 no.12
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• pp.239-248
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• 2023

The purpose of this study is to analyze the factors for service contracts that affect the successful bid price rate, focusing on the case of the country market. In the study, ordering organizations and bidders differentiated themselves from existing studies by analyzing service contracts that affect the successful bid price rate in a wide range of country markets. Comparative analysis of the awarding price ratio for services, this work provides a comparable result to the existing results in the previous literature. The analytical model used five independent variables such as budget, contract method, the days of the public notice, the awarding method, and the lowest awarding ratio. In the survey and analysis, big data was collected using text mining for service bids for Nara Market over the past 18 years and data was analyzed in a multi-dimensional way. The results of the analysis are as follows, (1) if budget does not determine the awarding price ratio. This is not the case in small amounts. (2) The contract method affects the awarding price ratio. (3) The days of the public notice increase, the awarding price ratio decrease. (4) the awarding method affects the awarding price ratio. (5) The lowest awarding ratio determines the awarding price ratio. Based on the results of empirical analysis, policy implications were sought.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.