• ETRI Journal
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• 제31권6호
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• pp.741-748
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• 2009

We present an analysis of microstrip coupled lines (MCLs) used to improve the stability of a 60 GHz narrowband amplifier. The circuit has a 4-stage structure implementing MCLs instead of metal-insulator-metal (MIM) capacitors for the unconditional stability of the amplifier and yield enhancement. The stability parameter, U, is used to compare the stability of MCLs with that of MIM capacitors. Experimental results show that MCLs are more stable than MIM capacitors with the same capacitances as MCLs because the parasitic parallel resistances of MCLs are lower than those of MIM capacitors. Moreover, the bandwidth of an amplifier using MCLs is narrower than one using MIM capacitors because the parasitic series inductances of MCLs are higher than those of MIM capacitors.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1504-1505
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• 2007

In this paper, fully embedded high Dk BTO MIM capacitors have been developed into a multi-layered organic package substrate for low cost RF SOP (System on Package) applications. These embedded MIM capacitors were designed and simulated by using CST 3D EM simulators for finding out optimal geometries and verifying their applicability. The embedded MIM capacitor with a size of $550\;{\times}\;550\;um^2$ has a capacitance of 5.3pF and quality factor of 43 at 1.5 GHz, respectively. The measured performance characteristics were well matched with 3D EM simulated ones. Equivalent circuit parameters of the embedded capacitors were extracted for making a design library.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.73-73
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• 2009

In this paper, electrical properties in $ZrO_2$-based high-k metal MIM capacitors were studied. Linear voltage coefficient of capacitance (VCC) was 72.375 ppm/V, quadratic VCC was $174.581ppm/V^2$, temperature coefficients of capacitance was $111.01ppm/^{\circ}C$ at 100kHz and $89.497ppm/^{\circ}C$ at 1MHz, which indicate the temperature dependence of electrical parameter for MIM capacitors.

• 한국진공학회지
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• 제9권2호
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• pp.162-166
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• 2000

플라즈마 화학증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)을 이용하여 양질의 $Si_3N_4$ 금속-유전막-금속(Metal-Insulator-Metal, MIM) 커패시터를 구현하였다. 유전체인 $Si_3N_4$와 전극인 Al의 계면반응을 억제시키기 위해 티타늄 나이트라이드(TiN)를 확산 장벽으로 사용한 결과 MIM 커패시터의 전극과 유전체 사이의 계면에서는 어떠한 hillock이나 석출물도 관찰되지 않았다. 커패시턴스와 전류전압 특성분석으로부터 양질의 MIM 커패시터 특성을 보이는 $Si_3N_4$의 최소 두께는 500 $\AA$이며, 그 두께 미만에서는 대부분의 커패시터가 전기적으로 단락되어 웨이퍼 수율이 낮아진다는 사실을 알 수 있었다. 투과전자현미경(transmission Electron Microscope, TEM)을 이용한 단면 미세구조 관찰을 통해 $Si_3N_4$층의 두께가 500 $\AA$ 미만인 커패시터의 경우에 TiN과 $Si_3N_4$의 계면에서 형성되는 슬릿형 공동(slit-like void)01 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 열 유기 잔류 응력(thermally-induced residual stress) 계산에 기초하여 공동의 형성 기구를 규명하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.12-12
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• 1994

• 한국ITS학회 논문지
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• 제7권5호
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• pp.97-105
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• 2008

반도체 공정의 미세화 및 마이크로 시스템 기술의 발전 그리고 소형 무선PAN 및 이동통신 장치들의 급증으로 인하여 전자부품들의 소형화와 직접화에 대한 요구가 지속적으로 증가되고 있다. 본 연구에서는 휴대형 무선PAN 및 이동통신용 전자회로 설계에 다양한 목적으로 널리 사용되고 있는 기저대역의 수동소자들 중 미세 커패시터의 안정성과 전기적 특성을 확보하기 위하여, 유전체인 AIN을 사용하여 MIM구조로 제작된 미세 박막 커패시터 소자의 전기적인 특성을 분석하고 기저대역에서의 성능을 평가한다. 또한 제작된 미세 박막형 커패시터의 용량제어 방법을 제시함으로서 기저대역에서 범용으로 사용할 수 있는 미세 박막 커패시터의 모델을 제시하고자 한다. 또한, 주파수 대역에 따른 MIM구조의 AIN 커패시터 특성을 분석함으로서 향후 임베디드 소자와 집적화를 위한 고정밀의 미세수동 소자로서의 활용방안을 제시하고자한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.412-415
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• 2003

[ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.