References
- S. Kim et al., "High-Gain Wideband CMOS Low Noise Amplifier with Two-Stage Cascode and Simplified Chebychev Filter," ETRI J., vol. 29, no. 5, Oct. 2007, pp. 670-672. https://doi.org/10.4218/etrij.07.0207.0025
- M. Karkkainen et al., "A Set of Integrated Circuits for 60 GHz Radio Front-End," IEEE MTT-S Digest, 2002, pp. 1273-1276.
- T. Yao et al., "Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio," IEEE J. Solid-State Circuits, vol. 42, no. 5, May 2007, pp. 1044-1057.
- Y. Mimino et al., "A 60 GHz Millimeter-Wave MMIC Chipset for Broadband Wireless Access System Front-End," IEEE MTTS Digest, 2002, pp. 1721-1724.
- H. Zirath et al., "Development of 60 GHz Front End Circuits for High Data Rate Communication System in Sweden and Europe," IEEE GaAs Digest, 2003, pp. 93-96.
- H. Zirath et al., "Development of 60-GHz Front-End Circuits for High-Data-Rate Communication System," IEEE J. Solid-State Circuits, vol. 39, no. 104, Oct. 2004, pp. 1640-1649. https://doi.org/10.1109/JSSC.2004.833568
- M. Varonen et al., "Power Amplifier for 60 GHz WPAN Applications," Radio and Wireless Conf. Digest, Aug. 2002, pp. 11-14.
- K.C. Gupta et al., Microstrip Lines and Slotlines, 2nd Ed., Artech House, 1996.
- J.P. Mondal, "An Experimental Verification of a Simple Distributed Model of MIM Capacitors for MMIC Applications," IEEE Trans. MTT, vol. 35, no. 4, Apr. 1987, pp. 403-408. https://doi.org/10.1109/TMTT.1987.1133662
- M.L. Edwards et al., "A New Criterion for Linear 2-Port Stability Using a Single Geometrically Derived Parameter," IEEE Trans. MTT, vol. 43, no. 12, Dec. 1992, pp. 2303-2311.
- D.M. Pozar, Microwave Engineering, 2nd Ed., John Wiley & Sons, 1981.
- J.W. Lim et al., "0.12 um Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process," Jpn. J. Appl. Physics, vol. 43, no. 12, Dec. 2004, pp. 7934-7938. https://doi.org/10.1143/JJAP.43.7934
- W. Chang et al., "A 60 GHz Medium Power Amplifier for Radioover-Fiber System," ETRI J., vol. 29, no. 5, Oct. 2007, pp. 673-675. https://doi.org/10.4218/etrij.07.0207.0075
- Y. Lee et al., "Highly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA," ETRI J., vol. 30, no. 1, Feb. 2008, pp. 158-160. https://doi.org/10.4218/etrij.08.0207.0181
- Mikko Varonen et al., "Integrated Power Amplifier for 60 GHz Wireless Applications," IEEE MTT-S Digest, 2003, pp. 915-918.
- S.E. Gunnarsson et al., "Highly Integrated 60 GHz Transmitter and Receiver MMICs in a GaAs pHEMT Technology," IEEE J. Solid-State Circuits, vol. 40, no. 11, Nov. 2005, pp. 2174-2186. https://doi.org/10.1109/JSSC.2005.857366
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