• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.7B
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• pp.1326-1332
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• 2000

본 연구에서는 Ka 밴드 대역의 LMDS에 사용될 수 잇는 저잡음증폭기를 MMIC로 설계하고 제작하였다. 능동소자로는 p-HEMT를 사용하였으며, 주파수가 높으므로 저주파 MMIC에서 사용되는 수동 소자인 spiral 인덕터나 MIM 커패시터를 사용하지 못하고 마이크로스트립라인을 이용하여 증폭기를 설계하였다. 증폭기 설계 시 안정도를 해결하고 잡음 지수를 낮추기 위하여 RC 궤환회로와 소스 인덕터를 사용하였으며, 제작된 증폭기는 4단 증폭기로 26.5 GHz에서 이득 27.4dB, 잡음지수 3.46 dB를 얻었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.56-56
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• 2001

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.27-31
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• 2007

The cpapcitors with MIM(metal-insulator-metal) structures using PVP gate insulation films were prepared for the application of flexible organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as a solute and PGMEA(propylene glycol monomethyl ether acetate) as a solvent. The cross-linked PVP insulation films were also prepared by addition of poly(melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross- linked PVP films was found to be about 1.3 nA on Al/PES(polyethersulfone) substrate, whereas, on ITO/ glass substrate was about 27.5 nA indicating improvement of the leakage current at Al/PES substrates. Also, the capacitances of all prepared samples on ITO/glass and Al/PES substrates w ere ranged from 1.0 to $1.2nF/cm^2$, showing very similar result with the calculated capacitance values.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.573-580
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• 2020

In this paper, the characteristics of the inductor and capacitor, which are the basic components of the circuit, are constructed in a form that can be used in the LTCC multilayer. The inductors and capacitors used for the analysis were designed with rectangular spiral structures and MIM structures inside dielectrics with a dielectric constant of 7, respectively. The measured results were extracted from each element of the equivalent circuit proposed by the curve fitting method and verified the validity of the proposed equivalent circuit based on the extracted results. The analyzed inductor and capacitor were implemented in the form of library and proved its usefulness by applying to Elliptical type 5th LPF design. The LPF was measured through practical production, and as a result, the insertion loss in the passband DC ~ 3.7 GHz was up to 1.0 dB, the return loss was 19.2 dB, and the attenuation in the rejection band was 23.9 dB, which was close to the design goal.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.218-220
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• 2007

유기박막트랜지스터(organic thin film transistor, OTFT)의 게이트 절연막으로 PVP(poly-4-vinylphenol) 물질을 이용하여 MIM (metal-insulator-metal) 구조의 캐패시터 소자를 제작하였다. 유기 절연층의 형성은 ITO/Glass 기판 위에 PVP를 용질로, PGMEA(propylene glycol monomethyl ether acetate)를 용매로 사용하였다. 또한 열경화성 수지인 poly(melamine-co-formaldehyde)를 사용하여 cross-linked PVP 절연막을 합성하여 스핀코팅법으로 소자를 형성하였다. 제작된 소자에 대해 절연막 두께에 따른 전기적 특성을 조사한 결과 300 nm 에서 500 nm로 두께가 증가할수록 누설전류는 10.69 nA 에서 0.1 nA 로 크게 감소하였다. 또한 캐패시터 소자의 정전용량은 300 nm 의 두께에서 1.05 nF 으로 500 nm 의 두께에서의 0.65 nF 과 비교하여 보다 양호한 특성이 나타났다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.359-363
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• 2005

The organic insulation devices with MIM (metal-insulator-metal) structures as PVP gate insulation films were prepared for the application of organic thin film transistors (OTFT). The co-polymer organic insulation films were synthesized by using PVP(poly-4-vinylphenol) as solute and PGMEA (propylene glycol monomethyl ether acetate) as solvent. The cross-linked PVP insulation films were also prepared by addition of poly (melamine-co-formaldehyde) as thermal hardener. The leakage current of the cross-linked PVP films was found to be about 300 pA with low current noise. and showed better property in electrical properties as compared with the co-polymer PVP insulation films. In addition, cross-linked PVP insulation films showed better surface morphology (roughness), showing about 0.11${\~}$0.18 nF in capacitance for all PVP film samples.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Proceedings of the KAIS Fall Conference
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• 2007.11a
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• pp.133-135
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• 2007

PMMA (polymethyl metha crylate) 유기막의 농도별 최적화를 위하여 1, 2, 4, 6, 8 wt.%의 PMMA 농도별로 Al/PMMA/ITO/Glass 구조의 MIM (metal- insulator-metal) 캐패시터 소자를 제작하였다. 유기 절연층의 형성은 ITO/Glass 기판 위에 PMMA를 용질로, Anisle을 용매로 사용하여 스핀코팅법으로 소자를 형성하였다. 제작된 소자에 대해 농도에 따른 전기적 특성을 조사한 결과 누설전류는 2wt.% 농도의 PMMA로 제작된 소자에서 0.3 pA로 가장 우수한 결과를 얻을 수 있었다. 또한 동일한 PMMA 농도로 제작된 캐패시터 소자의 정전용량은 1.2 nF으로 가장 좋은 결과를 얻을 수 있었으며, 계산된 값과 매우 유사한 값을 얻을 수 있었다.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.228-231
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• 1993

Langmuir-Blodgett(LB) 초박막 MIM구조의 소자에서 직류전압이 발생된다는 것은 이미 잘 알려져 있다. 발생전압의 원인은 LB막과 전극사이의 어떤 화학반응에 의한 것으로 보고되었다. 본 논문에서는 1986년에 제작되어 공기중에 방치된 LB 초박막 시료를 대상으로 실험한 결과, 제작 당시와 동일한 크기의 전압이 발생하고 있음을 확인할 수 있었다. 이때 LB막과 전극의 두께는 각각 20~30.angs. 및 2000.angs.정도이었다.