• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.543-548
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• 2014

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.747-752
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.194-199
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• 1997

We fabricated MIM (Metal-Insulator-Metal) antifuses with Al/a-Si/Mo structure and then examined the I-V characteristics and on-state resistance distribution of antifuses. The leakage current of antifuses is below $1Pa/{\mu}m^2$, and programming voltage lies within 10 to 11 V. After programming, on-resistance of antifuses is mostly 10-20$\Omega$ and 20% of these have above 100$\Omega$. In order to reduce on-resistance and the deviation of this distribution, we tried to inject current again into already programed antifuses (we call this re-programming method). From this method, the resistance of antifuses with above 100Ω can be reduced to below 50$\Omega$. When antifuses are programmed by re-programming method, these antifuses have more uniform and lower on-resistance than programmed with one-pulse.

• Current Optics and Photonics
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• v.3 no.1
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• pp.40-45
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• 2019

Adding tunability to biological light emitters offers an unprecedented technique in biological sensing and imaging. Here, we report a tunable, lithographic-free, planar, and ultrathin metal-insulator-metal (MIM) resonator capable of tuning the optical properties solely by a silk/sodium fluorescein hydrogel layer, a biocompatible light emitter. In water, the volume of the resonator was expanded by swelling, and then the resonant mode could be shifted. Simulations predicted the red-shifted resonance peak in transmission when the MIM was swollen in water. The red-shift could be attributed to the increase in the thickness of the silk hydrogel layer due to the absorbed water. The shift of the resonance could affect the fluorescence of the dye in the silk hydrogel layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.133-133
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• 2005

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.1
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• pp.59-66
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• 2011

In this paper, a co-planar waveguide(CPW)-fed zeroth-order resonant(ZOR) antenna with an improved radiation efficiency was built and tested. The unit cell of the proposed antenna consists of a series metal-insulator-metal(MIM) capacitor and a shorted shunt stub inductor. In order to reduce the antenna size and to achieve the high radiation efficiency two shorted shunt stub arms bent by 90 degree were connected to the ground plane through the via. The proposed antenna consisting of two unit cells has an open ended composite right/left-handed(CRLH) transmission line structure. As a result the dominantly radiating parts of the antenna comes from shunt stub arms and vertical vias. The total size of the fabricated zeroth-order resonant antenna is $0.22\;{\lambda}_0{\times}0.22\;{\lambda}_0$. The measured gain and efficiency of the fabricated antenna have been enhanced by 3.07 dBi and 75 %, respectively, at the zeroth-order resonant frequency of 2.97 GHz.

• ETRI Journal
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• v.30 no.6
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• pp.826-832
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• 2008

The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.273-276
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• 2001

The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.30-36
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• 2009

The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.