• Journal of Sensor Science and Technology
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• v.32 no.2
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• pp.67-74
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• 2023

A microfluidic paper-based analytical device (µPAD) is proposed for the selective detection of ammonia in water by using the modified Berthelot reagent and a fluidic channel consisting of hollow paper. The modified Berthelot reagents were uniformly dispersed in cyclohexane and then immobilized in a detection zone of the µPAD. The loading position of the reagents and the type of a sample flow channel were optimized to achieve a sensitive ammonia detection within a short analytical time. The NH₃ µPAD exhibits a linear colorimetric response to the concentration of ammonia dissolved in water in the range of 1-100 mg L^-1, and its limit-of-detection is 1.75 mg L^-1. In addition, the colorimetric response was not influenced by the addition of 100 mg L^-1 nitrogen containing compounds (sodium nitrate, sodium nitrite, uric acid, hydroxylamine, butylamine, diethylamine) or inorganic salts (NaCl, Na₂HPO₄), presenting the enough selectivity in the detection of water-dissolved ammonia against possible interferents.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.2
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• pp.355-362
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• 2000

The objective of this paper is to estimate the pollutant load based on event mear concentrations(EMC) in industrial complex. Eight sub-basins in the Chongju industrial complex were selected for sampling and study with different characteristics during the period from June 1997 to August 1998. During the storm events, measured EMC ranges of $BOD_5$, COD, SS, TKN, TP, HEM, $NO_3-N$, $PO_4-P$, Cr, Pb, Cu and Fe in the industrial complex watersheds were 11~176mg/L, 40~502mg/L, 23~633mg/L, 104~20.9mg/L, 0.22~7.51mg/L, 12.7~548.7mg/L, 0.06~2.66mg/L, 0.12~3.39mg/L, 0.01~0.50mg/L. 0.02~0.42mg/L, 0.01~0.15mg/L and 1.29~11.51mg/L respectively. And the calculated annual average pollutant unit loadings of $BOD_5$ COD, SS, TKN, $NO_3-N$, $PO_4-P$, TP, HEM, Cr, Pb, Cu and Fe were 374.4kg/ha/yr 924.1kg/ha/yr, 983.6kg/ha/yr, 48.8kg/ha/yr, 8.1kg/ha/yr, 9.7kg/ha/yr, 17.8kg/ha/yr 943.0kg/ha/yr, 0.7kg/ha/yr, 0.9kg/ha/yr, 0.3kg/ha/yr and 28.9kg/ha/yr, respectively.

• Transactions of Materials Processing
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• v.21 no.7
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• pp.447-452
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• 2012

This paper is concerned with forming of Al-Zn-Mg-Sc aluminum alloy bolts, focusing on the effects of heat treatment and age-hardening on the formability and ductile damage evolution. Both experimental and finite element studies were performed. From the experiments, it is observed that the heat treatment or the normalization of Al-Zn-Mg-Sc aluminum alloy increases its formability dramatically resulting in successful bolt forming, while the effects of age-hardening at room temperature on the stress-strain relationship and formability are not very critical. Deformation characteristics such as distribution of effective stress and strain, material flow, and ductile damage evolution during bolt forming are examined using a commercial finite element package, Deform-2D. It should be noted that the extrusion load predicted by the finite element method matches well the experiment results. The finite element predictions on the deformation characteristics support the experimental observations such as fracture of bolt head flange, material flow, and distribution of hardness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.125-125
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• 2009

In this paper, we have investigated about MgO thin films on Si(100) substrate by RF magnetron Sputtering. MgO thin films were affected by RF input power, gas pressure, gas composition, and substrate temperatures. So, we focused on most effective RF input power in deposition condition. Thickness of MgO thin films was measured by surface profiler. And structural analysis carried out by X-ray Diffraction(XRD). physical characteristic and thickness of thin films changed with RF input power.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.4
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• pp.593-600
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• 2012

Thixomolding of Mg-alloy is a semi-solid injection molding process utilizing thixotropic phenomenon. Using this process, higher strength, thinner wall section and tighter tolerance without porosity are obtained. It has been applied for production of near-net-shape magnesium component. To design optimal thixomolding process of Mg-alloy part, molding conditions such as slurry temperature, mold temperature and injection time should be determined properly. Selection of these parameters has been dependent upon engineers' experience and intuitiveness. In this paper, to improve mechanical properties of the thixomolded product, optimal selection of process variables such as injection velocity, barrel temperature and die temperature in the process has been studied through microstructural analysis and Taguchi method. Performance of the process is verified through experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.143-143
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• 2009

In this paper, MgO thin films were deposited on Si(100) single crystal substrates by RF magnetron sputtering. The effects of RF power, chamber atmosphere, and substrate temperature on the characteristics of MgO thin films were already studied. Thus, we focused on the working pressure. The structural properties of the films changed dramatically with deposition conditions. Structural analyses carried out by X-ray diffraction (XRD). MgO films were obtained at the deposition conditions as follows:

• The Journal of the Korea Contents Association
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• v.2 no.1
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• pp.120-124
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• 2002

It is the purpose of the present to report result of a preliminary electrochemical characterization of the as-cast Mg-Ca alloys. Electrochemical data will be correlated with chemical composition of impurities, and the microstructural change before and after Ca is added. This paper shows that small addition of Ca imparts beneficial effect in electrochemical properties of Mg alloy, primarily, through microstructural modifications.

• The Korean Journal of Pharmacology
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• v.18 no.2
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• pp.51-58
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• 1982

In this paper, the influence of phenytoin and phenobarbical on the changes of brain norepinephrine(NE) content, plasma corticosterone and blood sugar level in mice were studied. The results obtained were summarized as follows: 1) Phenytoin(50 mg/kg) increased the brain NE content but phenobarbital(50 mg/kg) did not affect. The increase of the brain NE content induced phenytoin was potentiated by phenobarbital pretreatment. 2) Phenytoin(25 mg/kg, 50 mg/kg) markedly increased the level of plasma corticosterone but phenobarbital did not affect. The increase of the plasma corticosterone induced by phenytoin was inhibited by phenobarbital pretreatment. 3) Phenytoin(50 mg/kg) markedly increased the blood sugar level but phenobarbital did not affect. The increase of the blood sugar induced by phenytoin was not affected by phenobarbital pretreatment.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.578-583
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• 2002

For ac PDP, the lifetime should be guaranted over, 30000 hours. The lifetime is correlated with the deterioration characteristics for the weakest element in ac PDP. However, the short-term deterioration test method of the at PDP has not well developed. In this paper, a short term deterioration test method of a given element in the ac PDP is proposed. By this method, MgO deterioration characteristics are investigated. The deterioration rate is decreased with MgO thickness but it was almost saturated over 5000$\AA$.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.