• Nuclear Engineering and Technology
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• v.50 no.4
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• pp.553-561
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• 2018

To easily understand and systematically express the behaviors of the industrial systems, various system modeling techniques have been developed. Particularly, the importance of system modeling has been greatly emphasized in recent years since modern industrial systems have become larger and more complex. Multilevel flow modeling (MFM) is one of the qualitative modeling techniques, applied for the representation and reasoning of target system characteristics and phenomena. MFM can be applied to industrial systems without additional domain-specific assumptions or detailed knowledge, and qualitative reasoning regarding event causes and consequences can be conducted with high speed and fidelity. However, current MFM techniques have a limitation, i.e., the dynamic features of a target system are not considered because time-related concepts are not involved. The applicability of MFM has been restricted since time-related information is essential for the modeling of dynamic systems. Specifically, the results from the reasoning processes include relatively less information because they did not utilize time-related data. In this article, the concepts of time-to-detect and time-to-effect were adopted from the system failure model to incorporate time-related issues into MFM, and a methodology for enhancing MFM-based reasoning with time-series data was suggested.

• Nuclear Engineering and Technology
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• v.46 no.6
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• pp.753-772
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• 2014

The paper presents functional modelling and its application for diagnosis in nuclear power plants. Functional modelling is defined and its relevance for coping with the complexity of diagnosis in large scale systems like nuclear plants is explained. The diagnosis task is analyzed and it is demonstrated that the levels of abstraction in models for diagnosis must reflect plant knowledge about goals and functions which is represented in functional modelling. Multilevel flow modelling (MFM), which is a method for functional modelling, is introduced briefly and illustrated with a cooling system example. The use of MFM for reasoning about causes and consequences is explained in detail and demonstrated using the reasoning tool, the MFMSuite. MFM applications in nuclear power systems are described by two examples: a PWR; and an FBR reactor. The PWR example show how MFM can be used to model and reason about operating modes. The FBR example illustrates how the modelling development effort can be managed by proper strategies including decomposition and reuse.

• Geotechnical Engineering
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• v.2 no.3
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• pp.67-78
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• 1986

This paper presents how to determine the system reliability of a typical shallow foundation constituted four potential correlated failure modes of hearing capacity (BCM), consolidation settlement (CSM), moment (MFM), and tension shear (PCM). Through the idenfication of the distinct and different modes and evaluation of range of system reliability, the obtained conclusions are as follows; 1. The CSM and the PCM are the lowest and highest of reliability indices of single performance function, and the BCM and the MFM are medium of them. 2. For the correlated failure modes, the hi-modal bounds Is narrower and lower of failure probability than the unimodal bounds. Not to be overestimated, therefore, the system reliability should be based on the second-order bounds using correlated performance functions.

• Nuclear Engineering and Technology
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• v.55 no.12
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• pp.4408-4425
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• 2023

Alarm flood due to abnormality propagation is the most difficult alarm overloading problem in nuclear power plants (NPPs). Root-cause analysis is suggested to help operators in understand emergency events and plant status. Multilevel Flow Modeling (MFM) has been extensively applied in alarm management by virtue of the capability of explaining causal dependencies among alarms. However, there has never been a technique that can identify the actual root cause for complex alarm situations. This paper presents an automated root-cause analysis system based on MFM. The causal reasoning algorithm is first applied to identify several possible root causes that can lead to massive alarms. A novel root-cause ranking algorithm can subsequently be used to isolate the most likely faults from the other root-cause candidates. The proposed method is validated on a pressurized water reactor (PWR) simulator at HAMMLAB. The results show that the actual root cause is accurately identified for every tested operating scenario. The automation of root-cause identification and ranking affords the opportunity of real-time alarm analysis. It is believed that the study can further improve the situation awareness of operators in the alarm flooding situation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.481-487
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• 2013

To successfully accomplish a bit synchronization, a synchronizer should exploit a preamble pattern. A MFM (modified frequency modulation) flag is uses as a preamble in a PJM (phase jitter modulation) mode RFID standard. In the recent work, a synchronizer for a PJM mode tag was proposed, which is composed of several correlators. In this paper, we present a new bit synchronizer in which a coarse synchronization is done as in the previous work while a fine synchronization is performed via exploiting a violation bit included in the MFM flag. We show that the proposed synchronizer can significantly reduce the overall hardware complexity at the expense of slight burden to a demodulator structure. Through simulation, we also show that its performance is comparable to that of the previous system despite its hardware simplicity.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05a
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• pp.340-345
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• 1996

Because of limited resources of time and information processing capability during abnormal situation, diagnosis is difficult tasks in nuclear power plant (NPP) operators. Moreover since minimizing of adverse consequences according to process abnormalities is vital for the safety of NPP, introducing of diagnosis support systems have particularly emphasized. However, considerable works to develop effective diagnostic support system are not sufficiently fulfilled because of the complexity of NPP is one of the major problems. To cope with this complexity, a lot of model-based diagnosis support systems have considered and implemented worldwide. In this paper, as a prior step to development of model-based diagnosis support systems, primary side of pressurized water reactor is functionally modeled by multilevel flow modeling (MFM) concept. MFM is suitable for complex system modeling and for diagnosis of abnormalities. Furthermore, knowledge-based diagnosis process, of NPP operator could be supported because this diagnosis strategy can represent operator's one.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.1261-1262
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• 2005

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.193-198
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• 2004

Using the $PbO-B_2O_3-Bi_2O_3$ flux system, $(TbBi)_3(FeAIGa)_5O_{12}(TbIG)$, $(EuBi)_3(FeAIGa)_5O_{12}(EuIG)$ and $(EuTbBi)_3(FeAIGa)_5O_{12}(EuTbIG)$ films were grown on $(GdCa)_3(GaMgZr)_5O_{12}(SGGG)$ substrates by the liquid phase epitaxy (LPE). The saturation magnetization of the grown TbIG, EuIG and EuTbIG films was about 150, 950 and 125 Oe, respectively. The TbIG films resulted in the single magnetic domain while the EuIG and EuTbIG films were observed to be the multi magnetic domains by magnetic force microscope (MFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.156-157
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• 2012

단일 셀에서 비휘발성 및 고속의 휘발성 메모리를 모두 구동할 수 있는 다기능 메모리는 모바일 기기 및 embedded 장치의 폭발적인 성장에 있어 그 중요성이 커지고 있다. 따라서 최근 이러한 fusion기술을 응용한 unified RAM (URAM)과 같은 다기능 메모리의 연구가 주목 받고 있다. 이러한 다목적 메모리는 주로 silicon on insulator (SOI)기반의 1T-DRAM과 SONOS기술 기반의 비휘발성 메모리의 조합으로 이루어진다. 하지만 이런 다기능 메모리는 주로 단결정기반의 SOI wafer 위에서 구현되기 때문에 값이 비싸고 사용범위도 제한되어 있다. 따라서 이러한 다기능메모리를 다결정 실리콘을 이용하여 제작한다면 기판에 자유롭게 메모리 적용이 가능하고 추후 3차원 적층형 소자의 구현도 가능하기 때문에 다결정실리콘 기반의 메모리 구현은 필수적이라고 할 수 있겠다. 본 연구에서는 다결정실리콘을 이용한 channel recessed구조의 다기능메모리를 제작하였으며 각 1T-DRAM 및 NVM동작에 따른 memory 특성을 살펴보았다. 실험에 사용된 기판은 상부 비정질실리콘 100 nm, 매몰산화층 200 nm의 SOI구조의 기판을 이용하였으며 고상결정화 방법을 이용하여 $600^{\circ}C$ 24시간 열처리를 통해 결정화 시켰다. N+ poly Si을 이용하여 source/drain을 제작하였으며 RIE시스템을 이용하여 recessed channel을 형성하였다. 상부 ONO게이트 절연막은 rf sputter를 이용하여 각각 5/10/5 nm 증착하였다. $950^{\circ}C$ N2/O2 분위기에서 30초간 급속열처리를 진행하여 source/drain을 활성화 하였다. 계면상태 개선을 위해 $450^{\circ}C$ 2% H2/N2 분위기에서 30분간 열처리를 진행하였다. 제작된 Poly Si MFM에서 2.3V, 350mV/dec의 문턱전압과 subthreshold swing을 확인할 수 있었다. Nonvolatile memory mode는 FN tunneling, high-speed 1T-DRAM mode에서는 impact ionization을 이용하여 쓰기/소거 작업을 실시하였다. NVM 모드의 경우 약 2V의 memory window를 확보할 수 있었으며 $85^{\circ}C$에서의 retention 측정시에도 10년 후 약 0.9V의 memory window를 확보할 수 있었다. 1T-DRAM 모드의 경우에는 약 $30{\mu}s$의 retention과 $5{\mu}A$의 sensing margin을 확보할 수 있었다. 차후 engineered tunnel barrier기술이나 엑시머레이저를 이용한 결정화 방법을 적용한다면 device의 특성향상을 기대할 수 있을 것이다. 본 논문에서는 다결정실리콘을 이용한 다기능메모리를 제작 및 메모리 특성을 평가하였다. 제작된 소자의 단일 셀 내에서 NVM동작과 1T-DRAM동작이 모두 가능한 것을 확인할 수 있었다. 다결정실리콘의 특성상 단결정 SOI기반의 다기능 메모리에 비해 낮은 특성을 보여주었으나 이는 결정화방법, high-k절연막 적용 및 engineered tunnel barrier를 적용함으로써 해결 가능하다고 생각된다. 또한 sputter를 이용하여 저온증착된 O/N/O layer에서의 P/E특성을 확인함으로써 glass위에서의 MFM구현의 가능성도 확인할 수 있었으며, 차후 system on panel (SOP)적용도 가능할 것이라고 생각된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.