• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.953-956
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• 2005

Low voltage actuation and high isolation characteristics are key features to be solved in electrostatic RF switch design. Since these parameters in the conventional parallel plate MEMS switch design are in trade-off relation, both requirements cannot be met simultaneously. In vertical comb design, however, the actuation voltage is independent to the vertical separation distance between the contact electrodes. Then, we can design the large separation distance between contact electrodes to get high isolation. We have designed an RF MEMS switch which has -40dB isolation at 5 GHz and 6 V operation voltages. The characteristics of the fabricated switch are being evaluate.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.116-120
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• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2233-2235
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• 2000

We present the characteristics of microwave and mechanical behavior for the electrostatically actuated z-shaped laterally driven micriomachined CPW SPST(Single Pole Single Throw) Switch, which is for the application of the microwave communication systems. In this paper, we have aimed to maintain advantages. such as low insertion loss and low power consumption that the previously developed RF MEMS Switch has and minimize also stiction problem. enhance the microwave characteristics by etching of substrate beneath the switch, realize the pull-in voltage of below 30V. The optimized design parameters of the MEMS Switch can be selected by the analysis of the mechanical behavior and the use of ANSYS simulation method.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.77-81
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• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.225-230
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• 2013

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.513-514
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• 2007

• Journal of IKEEE
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• v.13 no.3
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• pp.1-6
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• 2009

In this paper, the external matching circuits were designed in order to compensate the efficiency which decreases by human body effect in the internal antenna phone. Comparing the two types of matching circuit, we selected the structure to minimize the switch stress. RF MEMS switch using low voltage was compared with FET switch and measured the performance in the handset. Here, the detection circuit which can couple th reflection power from antenna was added in the handset and we set up the demonstration system that can compensate the loss of hand effect automatically. In this system, when hand effect occurred, the radiation power increased 2.5dB by operation the matching circuit.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.154-155
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• 2000

Optical switches using MEMS(Micro Electro Mechanical Systems) process have been widely developed since conventional optical switches cannot meet the requirements of new systems. $N_2$ type micro-mirror switches are easy to control, have simple optical systems but have difficulties in expanding the ports. Micromirrors of 2N type switches must be tilted at various angles and have relatively complicated optical systems but have advantage in expanding ports. Another type of optical switch using MEMS process is micro-waveguide type. It is reliable than other types since it has no moving parts.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.