Low-voltage high-isolation RF MEMS switch based on a single crystalline silicon structure with fine gap vertical comb

미세 간극 수직 콤을 이용한 저 전압 고 격리도 단결정 RF MEMS 스위치

Low voltage actuation and high isolation characteristics are key features to be solved in electrostatic RF switch design. Since these parameters in the conventional parallel plate MEMS switch design are in trade-off relation, both requirements cannot be met simultaneously. In vertical comb design, however, the actuation voltage is independent to the vertical separation distance between the contact electrodes. Then, we can design the large separation distance between contact electrodes to get high isolation. We have designed an RF MEMS switch which has -40dB isolation at 5 GHz and 6 V operation voltages. The characteristics of the fabricated switch are being evaluate.