• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.193-197
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• 2003

As one of the core technologies in the field of the optical communication with WDM, the optical cross connector with movements of micro mirrors is getting important day by day. The packaging structure of 2-dimensional NxN MOEMS switch should be determined by the harmonization of the following items such as the geometrical compatability between optical and structural components, the characteristics of optical input and output parts with device, and the electrical performance for the operation of micro mirrors. Therefore, the packaging process could be defined as the integrated technology completed by the optical and electrical science and the material science for the understanding of its thermo-mechanical properties with packaging materials. In the present study, the harmonization between the optical and structural components as well as the optical characteristics of lens system used will be investigated.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.49-53
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• 2009

MEMS 패키징용 hollow Cu 비아의 형성거동을 분석하기 위해, 펄스-역펄스 전류밀도 및 도금시간에 따른 hollow Cu 비아의 미세구조를 관찰하고 평균 두께 및 두께 편차를 측정하였다. 펄스-역펄스 전류밀도를 $-5\;mA/cm^2$와 $15\;mA/cm^2$로 유지하며 3시간 도금시 hollow Cu 비아의 평균 도금두께는 $5\;{\mu}m$이었으며 표준편차는 $0.63\;{\mu}m$이었다. 도금시간을 6시간으로 증가시 평균 도금두께는 $10\;{\mu}m$, 표준편차는 $1\;{\mu}m$로 균일한 두께의 hollow Cu 비아를 형성하는 것이 가능하였다. 펄스-역펄스 전류밀도를 $-10\;mA/cm^2$와 $30\;mA/cm^2$ 이상으로 증가시킨 경우에는 도금시간 증가에 따라 도금두께보다 도금두께의 표준편차가 더 크게 증가하여 균일한 hollow Cu 비아의 형성이 어려웠다.

• 마이크로전자및패키징학회지
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• 제15권4호
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• pp.31-39
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• 2008

캐비티 형성이 불필요한 MEMS 캡 본딩을 위해 전기도금법을 이용하여 Cu/Sn rim 구조를 형성하였으며, $25{\sim}400{\mu}m$ 범위의 rim 폭에 따른 본딩특성을 분석하였다. Cu/Sn rim의 폭이 증가함에 따라 rim 패키지 내부의 유효 실장면적비가 감소하는 반면에 파괴하중비가 증가하며, Cu/Sn rim 폭이 150 ${\mu}m$일 때 유효 실장면적비와 파괴하중비를 최적화할 수 있을 것으로 예측되었다. 폭 25 ${\mu}m$ 및 폭 50 ${\mu}m$인 Cu/Sn rim 접합부에서는 모든 계면에서 본딩이 이루어진 반면에, 100 ${\mu}m$ 이상의 폭을 갖는 rim 접합부에서는 Sn 도금표면의 거칠기에 의해 본딩이 이루어지지 않은 기공 부위가 관찰되었다.

• Smart Structures and Systems
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• 제6권3호
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• pp.225-238
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• 2010

We report on the development of a new technology for the fabrication of Micro-Electro-Mechanical-System (MEMS) strain sensors to realize a novel type of crackmeter for health monitoring of ageing civil infrastructures. The fabrication of micromachined silicon MEMS sensors based on a Silicon On Insulator (SOI) technology, designed according to a Double Ended Tuning Fork (DETF) geometry is presented, using a novel process which includes a gap narrowing procedure suitable to fabricate sensors with low motional resistance. In order to employ these sensors for crack monitoring, techniques suited for bonding the MEMS sensors on a steel surface ensuring good strain transfer from steel to silicon and a packaging technique for the bonded sensors are proposed, conceived for realizing a low-power crackmeter for ageing infrastructure monitoring. Moreover, the design of a possible crackmeter geometry suited for detection of crack contraction and expansion with a resolution of $10{\mu}m$ and very low power consumption requirements (potentially suitable for wireless operation) is presented. In these sensors, the small crackmeter range for the first field use is related to long-term observation on existing cracks in underground tunnel test sections.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1718-1723
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• 2007

The Probe Card is a test component which is to classify the good semiconductor chips before the packaging. The yield of semiconductor product can be better from analysis of probe test information. Recently the technology of the probe card needs narrow width and large amount of probe tip. In this research, the probe tip based on the MEMS(micro electro mechanical system) technology was designed and fabricated to improve the reliability of the test and to meet 2-dimensional Array of tip. The mechanical and electrical properties of proposed tip were evaluated and it has over 100,000 of repetition times in the condition of 5gf, $20{\mu}m$ Over Drive.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.223-227
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• 2003

A new flexible electronic packaging technology and its medical applications are presented. Conventional silicon chips and electronic modules can be considered as "mechanically rigid box." which does not bend due to external forces. This mechanically rigid characteristic prohibits its applications to wearable systems or bio-implantable devices. Using current MEMS (Microelectromechanical Systems) technology. a surface micromachined flexible polysilicon sensor array and flexible electrode array fer neural interface were fabricated. A chemical thinning technique has been developed to realize flexible silicon chip. To combine these techniques will result in a realization of truly flexible sensing modules. which are suitable for many medical applications.

• 한국소음진동공학회논문집
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• 제16권12호
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.511-512
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• 2008

Micro-pads made of PDMS(polydimethylsiloane) can be mechanical shock or vibration absorber because of its contractibility. Fabrication of micro-pads and techniques of separation from substrate and attachment to new substrate are developed. Three micron thick PDMS pads were fabricated by imprinting lithography.