• Title/Summary/Keyword: MEMS Fabrication

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Development of Machining Technology for Micro Dies and Molds (미세금형제작을 위한 가공기술개발)

  • 이응숙;신영재;강재훈;제태진;이재경;이현용;이상조;최헌종;주종남
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.05a
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    • pp.1047-1050
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    • 2000
  • As the progress of new industrial products or parts technology, the precise and fine machining technologies are needed more and more. Micro fabrication technology of these products are usally consisted of mechanical machining or MEMS technology. Direct machining by mechanical method is not applicable to mass production. MEMS technology also has several problems such as low mechanical strength, bad surface roughness and difficulty of 3 dimensional machining. In this study, we introduce several micro fabrication technology to make micro molds and dies and our project to develop these machining technology.

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Fabrication and Characterization of Electrostatically Actuated Microcantilever Mass Sensors (정전기력으로 구동되는 마이크로 캔틸레버 질량 센서의 제작과 특성)

  • Lee, Jung-Chul;Choi, Bum-Kyoo
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.40-45
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    • 2011
  • Microcantilevers have been actively used in probe-based microscopy and gravimetric sensing for biological or chemical analytes. To integrate actuation or detection schemes in the structure, typical fabrication processes include several photolithographic steps along with conventional MEMS fabrication. In this paper, a simple and straightforward way to fabricate and operate silicon microcantilever mass sensors is presented. The fabricated microcantilever sensors which can be electrostatically actuated require only two photolithographic steps. Resonant characteristics of fabricated microcantilevers are measured with a custom optical-lever and results show size-dependent quality factors. Using a $40\;{\mu}m$ long, $7\;{\mu}m$ wide, and $3\;{\mu}m$ thick cantilever, we achieved subfemtogram mass resolution in a 1 Hz bandwidth.

Fabrication and Performance Evaluation of Temperature Sensor Matrix Using a Flexible Printed Circuit Board for the Visualization of Temperature Field (온도장 가시화를 위한 연성회로기판을 이용한 온도센서 어레이 제작 및 성능평가)

  • Ahn, Cheol-Hee;Kim, Hyung-Hoon;Cha, Je-Myung;Kwon, Bong-Hyun;Ha, Man-Yeong;Park, Sang-Hu;Jeong, Ji-Hwan;Kim, Kui-Soon;Cho, Jong-Rae;Son, Chang-Min;Lee, Jung-Ho;Go, Jeung-Sang
    • Journal of the Korean Society of Visualization
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    • v.7 no.2
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    • pp.17-21
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    • 2010
  • This paper presents the fabrication and performance measurement of a temperature sensor array on a flexible substrate attachable to a curved surface using MEMS technology. Specifically, the fabrication uses the well-developed printed circuit board fabrication technology for complex electrode definition. The temperature sensor array are lifted off with a $10{\times}10$ matrix in a $50\;mm{\times}50\;mm$ to visualize temperature distribution. Copper is used as temperature sensing material to measure the change in resistances with temperature increase. In a thermal oven with temperature control, the temperature sensor array is Characterized. The constant slope of resistance change is obtained and temperature distribution is measured from the relationship between resistance and temperature.

Investigation of Pyrolyzed Polyimide Thin Film as MEMS Material

  • Naka, Keisuke;Nagae, Hideki;Ichiyanagi, Masao;Jeong, Ok-Chan;Konishi, Satoshi
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.1
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    • pp.38-44
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    • 2005
  • Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at $800^{\circ}C$ for 60 minutes in $N_{2}$ ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about $2.17{\times}10^{-2}\;{Omega}cm$. From the result of the load-deflection test, the estimated Young's modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.

Silicon Prism-based NIR Spectrometer Utilizing MEMS Technology

  • Jung, Dong Geon;Son, Su Hee;Kwon, Sun Young;Lee, Jun Yeop;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.26 no.2
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    • pp.91-95
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    • 2017
  • Recently, infrared (IR) spectrometers have been required in various fields such as environment, safety, mobile, automotive, and military. This IR dispersive sensor detection method of substances is widely used. In this study, we fabricated a silicon (Si) prism-based near infrared (NIR) spectrometer utilizing micro electro mechanical system (MEMS) technology. Si prism-based NIR spectrometer utilizing MEMS technology consists of upper, middle, and lower substrates. The upper substrate passes through the incident IR ray selectively. The middle substrate, acting as a prism, disperses and separates the incident IR beam. The lower substrate has an amorphous Si (a-Si)-based bolometer array to detect the IR spectrum. The fabricated Si prism-based NIR spectrometer utilizing MEMS technology has the advantage of a simple structure, easy fabrication steps, and a wide NIR region operating range.

Fabrication of Tip of Probe Card Using MEMS Technology (MEMS 기술을 이용한 프로브 카드의 탐침 제작)

  • Lee, Keun-Woo;Kim, Chang-Kyo
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.4
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    • pp.361-364
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    • 2008
  • Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

Fabrication of Micro-inductor and Capacior For RF MEMS Applications

  • Cho, Bek-Hee;Lee, Jae-Ho;Bae, Young-Ho;Cho, Chan-Sub;Lee, Jong-Hyun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.2
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    • pp.102-110
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    • 2002
  • In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS(microelectro-mechanical systems) application with high performance and various function. In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro-device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS application with high performance and various functions.

Design of Silicon MEMS Package for CPW MMICs (CPW MMIC 칩 실장을 위한 실리콘 MEMS 패키지 설계)

  • Kim, Jin-Yang;Kim, Sung-Jin;Lee, Hai-Young
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.11
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    • pp.40-46
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    • 2002
  • A MEMS(Micro Electro Mechanical System) package using a doped-silicon(Si) carrier for coplanar microwave and millimeter-wave integrated circuits is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabrication and measuring a GaAs CPW(Coplanar Waveguide) on the three types of Si-carriers(gold-plated high resistivity, lightly doped, high resistivity). The proposed MEMS package using the lightly doped(15 ${\Omega}{\cdot}$) Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the resonant leakage.