• Title/Summary/Keyword: M2M Device

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Characterization of Current Drivability and Reliability of 0.3 um Inverse T-Gate MOS Compared with Those of Conventional LDD MOS (0.3 um급 Inverse-T Gate 모스와 LDD 모스의 전류구동력 및 신뢰성 특성비교)

  • 윤창주;김천수;이진호;김대용;이진효
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.8
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    • pp.72-80
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    • 1993
  • We fabricated 0.3um gate length inverse-T gate MOS(ITMOS) and conventional lightly doped drain oxide spacer MOS(LDDMOS), and studied electrical characteristics for comparison. Threshold voltage of 0.3um gate length device was 0.58 V for ITMOS and 0.6V for LDDMOS. Measured subthreshold characteristics showed a slope of 85mV/decades for both ITLDD and LDDMOS. Maximum transconductance at V S1ds T=V S1gs T=3.3V was 180mS/mm for ITMOS and 163mS/mm for LDDMOS respectively. GIDL current was observed to be 0.1pA/um for ITOMS and 0.8pA/um for LDDMOS. Substrate current of ITMOS as a function of drain current was found to be reduced by a foactor of 2.5 compared with that of LDDMOS.

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Cell Gap Dependent Transmission Characteristic of the Fringe-Field Switching Mode in a LC with Negative Dielectric Anisotropy

  • Kim, H.Y.;Kim, J.M.;Song, S.H.;Lee, S.K.;Lim, Y.J.;Jung, S.H.;Lee, S.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.539-542
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    • 2003
  • We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}m$, the transmittance at the center of pixel and common electrodes is low due to stronger influence of surface anchoring that holds the LC to the initial state than twisting force induced by neighboring LCs. In case of a large cell gap of 4 ${\mu}m$, the influence of surface anchoring force becomes weak so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we conclude that the light efficiency in the device is dependent on the cell gap.

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Fabrication of Plate-Type Linear Ultrasonic Motor (평판형 선형 초음파 모터의 시작)

  • Lee, J.S.;Jung, S.H.;Lee, K.W.;Lim, K.J.;Kim, Y.W.;Im, T.B.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1534-1536
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    • 1998
  • We designed and fabricated plate-type linear ultrasonic motor. It used multi-vibration mode, 1st Longitudinal and 4th Bending mode. To analyze vibration mode and find maximum displacement point, we simulated using FEM(Finite Element Method). The plate-type linear ultrasonic motor was fabricated by the simulation results. Also, to confirm application to card-forwarding device, frequency and load characteristics were measured. Its resonance frequency was 49.6 kHz, and its maximum speed was about 0.6m/s when no load. Also, its maximum efficiency was 1.2 % and in that time, speed and torque was 0.3 m/s and 0.7 mNm, respectively.

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A Study on the High Temperature Characteristics of Power LDMOSFETS Having Various 130en0e0 Gate Length (고온영역에서 게이트 확장 길이 변화에 따른 고내압 LDMOSFET의 전기적 특성연구)

  • Kim, Beom-Ju;Koo, Yong-Seo;Roh, Tae-Moon;An, Chul
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.217-220
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    • 2002
  • In this paper, we have investigated electronical chara-cteristics of power LDMOSFETS having different ex-tended gate lengths(1.B${\mu}{\textrm}{m}$, 2.4${\mu}{\textrm}{m}$, 3.O${\mu}{\textrm}{m}$) in the temperature range of 300k-500K. The results of this study indicate that on-resistance, breakdown voltage increase with temperature. and drain current, threshold voltage, transconductance decrease with temperature. Particular the facts, we observed that Le is the more increase, on-resistance is the more decrease. because every conditions are fixed normal states, only change the Le. As a result, Ron/BV, known for a figure of merit of power device, increase with temperature.

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1.55mm InGaAsP/InP MGL(Multi-Gain-Levered)-MQW-DFB-LD with high, red-shifted, and large bandwidth FM response (고효율, 적색편이, 광변조대역폭의 FM 응답특성을 갖는 1.55$\mu\textrm{m}$ InGaAsP/InP MGL-MQW-DFB-LD)

  • Shim, Jong-In
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.2
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    • pp.120-129
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    • 1995
  • A new nethod, namely multi-gain-levering, is proposed to improve FM response of the single frequency semiconductor lasers and applied to 1.55$\mu\textrm{m}$ InGaAsP/InP MGL(multi-gain-levered)-MQW-DFB-LD. This device consists of three sections with different bandgap energy and can be easily realized by selective MOVPE growth. Our analysis based on Green function showed that a flat, red-shifted, high FM efficiency of aove 15GHz/mA can be extected by novel gain-levering scheme.

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Ultrashort Pulsed Laser Machining for Biomolecule Trapping

  • Choi, Hae-Woon;Farson, Dave F.;Lee, L.James;Lee, Ho
    • Journal of the Optical Society of Korea
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    • v.13 no.3
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    • pp.335-340
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    • 2009
  • Ultrashort pulse laser drilling of polycarbonate track-etched membrane (pTEM) material was used to fabricate a mouse embryo cell trapping device. Holes with a diameter of $2{\mu}m$ to $5{\mu}m$ were fabricated on a $10{\mu}m$ thick membrane using a femtosecond laser with a 150 fs pulse width and 775 nm wavelength and multiple-pulse irradiation. In cell trapping tests, the overall cell occupancy of the machined holes in the fabricated pTEM was found to be more than 80%. The results of a single pulse and multiple pulse irradiation were compared in terms of the surface quality. It was generally found that a single pulse with high energy was less desirable than irradiation with multiple pulses of lower energy.

A Study on Interoperability of Heterogeneous IoT Platform Device Identification (이종 IoT 플랫폼 디바이스 식별체계 상호연동에 대한 연구)

  • Koo, Ja-Hoon;Kim, Young-Gab
    • Proceedings of the Korea Information Processing Society Conference
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    • 2017.11a
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    • pp.1279-1282
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    • 2017
  • 현재 사물인터넷(Internet of Things; IoT) 기술을 이용한 스마트홈 환경을 구축하기 위해서는 같은 식별체계를 사용하는 플랫폼 디바이스를 사용해야 한다. 그러나 주요 IoT 플랫폼들은 각각 다른 식별체계를 사용하고 있기 때문에 이종 플랫폼 간 디바이스 식별이 어려운 상황이다. 이종 플랫폼 간 디바이스 식별체계 상호연동에 대한 연구는 진행 중이며 아직까지 해결책은 제시되지 않았다. 따라서 본 논문에서는 주요 IoT 플랫폼인 oneM2M, GS1 Oliot, IBM Watson IoT, OCF IoTivity의 디바이스 식별체계를 분석하고 비교하여 서로 다른 플랫폼 간 디바이스 식별체계에 대한 번역기 또는 해석기의 필요성과 개념모델을 제시한다.

Fabrication of High Performance and Low Power Readout Integrated Circuit for $320{\times}256$ IRFPA ($320{\times}256$ 초점면배열 적외선 검출기를 위한 고성능 저 전력 신호취득회로의 제작)

  • Kim, Chi-Yeon
    • Journal of the Korea Institute of Military Science and Technology
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    • v.10 no.2
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    • pp.152-159
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    • 2007
  • This paper describes the design, fabrication, and measurement of ROIC(ReadOut Integrated Circuit) for $320{\times}256$ IRFPA(InfraRed Focal Plane Array). A ROIC plays an important role that transfer photocurrent generated in a detector device to thermal image system. Recently, the high performance and low power ROIC adding various functions is being required. According to this requirement, the design of ROIC focuses on 7MHz or more pixel rate, low power dissipation, anti-blooming, multi-channel output mode, image reversal, various windowing, and frame CDS(Correlated Double Sampling). The designed ROIC was fabricated using $0.6{\mu}m$ double-poly triple-metal Si CMOS process. ROIC function factors work normally, and the power dissipation of ROIC is 33mW and 90.5mW at 7.5MHz pixel rate in the 1-channel and 4-channel operation, respectively.

An Assessment of Offshore Wind Energy Resources around Korean Peninsula (한반도해역의 해상 풍력 자원 평가)

  • Kyong, N.H.;Yoon, J.E.;Jang, M.S.;Jang, D.S.
    • Journal of the Korean Solar Energy Society
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    • v.23 no.2
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    • pp.35-41
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    • 2003
  • In order to investigate the offshore wind resources around Korean peninsula, the "QuikSCAT Level 3" data by ADEOS II satellite was analyzed from Jan 1 2000 to Jan 18 2003. The "SeaWinds" on the satellite is a specialize4 device for microwave scatterometery that measures near-surface wind speed and direction under all weather and cloud conditions. Wind speed are extrapolated from 10m to 60m with the exponent of 1/10 in the power law model. It has been found that the High wind energy potentials are prevailing in the South sea and Southeastern end of Korean peninsula.

Characteristics of Top-Surface-Emitting Microlasers and Active Surface Emitting Laser Logic Devices (표면광 마이크로레이저 및 능동형 광학 연산소자의 특성)

  • 이용희
    • Korean Journal of Optics and Photonics
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    • v.2 no.4
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    • pp.233-241
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    • 1991
  • Structures, fabrication, and characteristics of top-surface-emitting GaAs four quantum well microlaser are described. The microlasers have good room-temperautre CW characteristivs. The maximum CW laser output is >3mW from a 30 $\mu\textrm{m}$ diameter microlaser and the maximum differential quantum efficiency is >70% from a 10 $\mu\textrm{m}$ diameter microlaser. Active surface emitting laser logic devices are designed and fabricated as a discrete version of a top-surface-emitting laser and heterojunction phototransistor. The active surface emitting laser logic device have high optical gain (>20 overall, >200 differential) and very high on/off ratio. Two-dimensional arrays of top-surface-emitting microlasers and active surface emitting laser logic devices will be critical elements for optical computing, photonic switching and neural network applications.

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