• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.2
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• pp.325-328
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• 2020

This paper demonstrated a voltage-controlled oscillator (VCO) using cost-effective (1-poly 6-metal) mixed signal standard CMOS process. To have the high-quality factor inductor in LC resonator with thin metal thickness, patterned-ground shields (PGS) was adopted under the spiral to effectively reduce the ac current of low resistive Si substrate. And, because of thin top-metal compared with that of RF option (2 ㎛), we make electrically connect between the top metal (M6) and the next metal (M5) by great number of via array along the metal traces. The circuit operated from 2.48 GHz to 2.62 GHz tuned by accumulation-mode varactor device. And the measured phase noise of LC VCO has -123.7 dBc/Hz at 1MHz offset at 2.62 GHz and the dc-power consumption shows 2.07 mW with 1.8V supply voltage, respectively.

• Journal of Korean Society of Environmental Engineers
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• v.32 no.12
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• pp.1141-1146
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• 2010

Isolated the heterotrophic aerobic bacteria in sandfiltered water on NA and TSBA solid medium, selected 8 dominant species and identified by Sherlock System. Each samples are irradiated 0, 5, 16, 40 and $60\;mJ/cm^2$ using on CBD (Collimated Beam Device) Medium Pressure UV lamp after these identified bacterium did liquid culture how to make $10^6{\sim}10^7\;cells/mL$ suspended in dilution water. Then cultured bacteria are estimated inactivation rate on plate media. Identified Gram positive group are Bacillus Subtilus, Bacillus megaterium, Rhodococcus erythropolis and Microbacterium laevaniformans; Gram negative group are Pseudomonas vesicularis, Pseudomonas pseudoflava, Alcaligenes paradoxus and Zooglea ramigera. These isolation of bacterium are more stronger reference strain and high resistance of MP UV irradiation, Besides Gram negative bacterium are more sensitive Gram positive bacterium on MP UV dose. Now we are estimating to $60{\sim}100\;mJ/cm^2$ MP UV dose for efficient disinfection in water treatment plant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.80-83
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• 2016

In the present paper, garnet structured $Y_3Al_5O_{12}:Ce^{3+}$ (YAG : Ce) ceramic phosphor plate (CPP) for high power laser diode (LD) was prepared and optical properties were analyzed. We synthesized monodispersed spherical nano-sized YAG : Ce particles by liquid phase method, fabricated phosphor ceramic plate with the addition of $Al_2O_3$. $75{\mu}m$ and $100{\mu}m$ thick YAG : Ce CPPs were compared in terms of the factors of conversion efficacy, thermal quenching, luminance and correlated color temperature (CCT). In conclusion, conversion efficacy decreased by 25 % in both samples and $100{\mu}m$ thick sample provides better optical properties of thermal quenching, maximum light conversion efficacy and maximum luminance value.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.930-935
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• 2009

This paper describes a miniaturezed metamaterial BT chip antenna for mobile devices. The size of the proposed antenna is $3.0\;mm(W){\times}2.0\;mm(L){\times}1.2\;mm(H)$. And it is fabricated by chip type. The zeroth-order resonant properties are analyzed by magnitude and phase distributions of the surface current using surface current scanning system. The antenna offers omni-directional radiation patterns and measured 3D average gain is over - 1.7 dBi.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.585-591
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• 2013

A robot automation system for coating uniformly a big radiator used in PPS(Packaged Power Station), which consists of 6-axis robot with spray gun, travelling vehicle, supply device of coating paint and thinner with pressured air, HMI controller and robot path OLP(Off-Line Programming), was developed. Experimental results on an optimum operation condition show that a coating thickness is $43{\mu}m$, which is satisfied to a design reference of $25-100{\mu}m$. A productivity of the developed coating robot automation system based on OLP is about 12.6 times of that of manual operation.

• Journal of the Korean Society for Nondestructive Testing
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• v.37 no.2
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• pp.106-114
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• 2017

This paper presents an automated subsurface micro void detection technique based on pulsed infrared thermography for inspecting epoxy molding compounds (EMC) used in electronic device packaging. Subsurface micro voids are first detected and visualized by extracting a lock-in amplitude image from raw thermal images. Binary imaging follows to achieve better visualization of subsurface micro voids. A median filter is then applied for removing sparse noise components. The performance of the proposed technique is tested using 36 EMC samples, which have subsurface (below $150{\mu}m{\sim}300{\mu}m$ from the inspection surface) micro voids ($150{\mu}m{\sim}300{\mu}m$ in diameter). The experimental results show that the subsurface micro voids can be successfully detected without causing any damage to the EMC samples, making it suitable for automated online inspection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.516-521
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• 2013

This paper investigates the two dominant but intertwined current blocking mechanisms of Switching and Kirk Effect in pure ternary InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors (DHBTs). Molecular Beam Epitaxy (MBE) grown, lattice-matched samples have been investigated giving substantial experimental results and theoretical reasoning to explain the interplay between these two effects as the current density is increased up to and beyond the theoretical Kirk Effect limit for devices of emitter areas varying from $20{\times}20{\mu}m^2$ to $1{\times}5{\mu}m^2$. Pure ternary InAlAs/InGaAs/InAlAs DHBTs are ideally suited for such investigations because, unless corrective measures are taken, these devices suffer from appreciable current blocking effect due to their large conduction band discontinuity of 0.5 eV and thus facilitating the observation of the two different physical phenomena. This enhanced understanding of the interplay between the Kirk and Switching effect makes the DHBT device design and optimization process more effective and efficient.

• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1995.03a
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• pp.1-8
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• 1995

This paper proposed a simple method for measuring surface roughness of ground surface. utilizing non-contact in-process measuring system using the diode laser. The measurement system is consisted of a laser unit with a diode laser and a cylindrical lens a detecting unit with polygon mirror and CCD array sensor. and a signal processing unit with a computer and device. During operation, this measuring system can provide information on surface roughness in the measuring distance with a single sampling and simultanilusly monitor the state of the grind wheel. The experimental results, showed that the increase of the feed rate and the dressing speed an caused increase in the surface roughness and when the surface roughness is 4Rmax-10Rmax, the cutting speed is 1653m/min-1665m/min. the feed rate is 0.2m/min-0.9m/min, the dressing speed is 0.2mm/rev-0.4mm/rev, the stylus method and the in-process method can be obtained the same results. thus under limited working conditions. using the proposed system. the surface roughness of the ground surface during cylindrical grinding can be obtained through the in-process measurement method using the diode laser.