• Electrical & Electronic Materials
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• v.7 no.3
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• pp.225-230
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• 1994

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1327-1329
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• 2006

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/m](gas state, liquid state, and solid state). The physicochemical properties of the LB films on the surface of pure water are studied by AFM. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1704-1706
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• 1999

$YBa_2Cu_3O_x$ superconducting thick film was fabricated by surface diffusion process of $Y_2BaCUO_5$ and the mixed compound of $(3BaCuO_2+2CuO)$ expected to be liquid phase above the peritectic temperature of YBa2Cu30x. For the surface diffusion. 3BaCu02+2CuO mixed with binder material was patterned on $Y_2BaCuO_5$ substrate by the screen printing method. The characteristic of current limit on thick film fabricated was measured. The thick film limited the current from $2.8213mA_{rms}$ to $4.2034mA_{rms}$ with $500{\Omega}$ load resistance, and from $4.1831mA{rms}$ to $4.2150mA_{rms}$ with $10{\Omega}$ load resistance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.59-63
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• 2004

In this paper, we have developed a 2-port resistive frequency mixer for the retrodirective active array. The circuit topology is consisted of 2-port to avoid the complexity of LO and RF signal combination, using a pseudomorphic HEMT device. The operating frequencies are 4.0 GHz, 2.01 GHz, and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -1㏈ and 1-㏈ compression point -15 ㏈m at the LO power of -10 ㏈m.

• Electrical & Electronic Materials
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• v.16 no.1
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• pp.62.2-62
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• 2003

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.52-59
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• 1998

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.

• Journal of the Korean Society for Precision Engineering
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• v.3 no.2
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• pp.62-75
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• 1986

An experimental investigation of the machining characteristics such as cutt- ing resistance, surface roughness and tool wear in turning the test pieces of SM45C steel with both coated and uncoated carbide tool tips under various cutting conditions was conducted. Also a specially designed simple vibration damping device was experimentally evaluated for its effectiveness on machined surface roughness and a vibration test was conducted to confirm its ability to reduce the amplitude. Based on these tests finding, the following conclusions are made; 1. The cutting resistance($\textrm{p}_{1}$) increases as the depth of cut(d) increases at fixed feed rate(f) over the cutting speed(v) range of 43-226 m/min and p decreses about 18% average when V is increased for fixed d and f. At V= 226m/min, $\textrm{p}_{1}$/for A, C tips are about the same level but $\textrm{p}_{1}$ for B tip is 15% less than A, C tips. 2. The specific cutting resistance(Ks) at V=226 m/min was derived for A, B, C tips respectively and the value of Ks for B rip is about 20% less than A, C tips. 3. The surface roughness(Ra) improves significantly as the cutting speed(V) is increased and this effect was greater when V>100 m/min. On the other hand, Ra deteriorates as the feed rate(f) is increased and this trend was accelerated when f>0.3 mm/rev. With regard to the difference of Ra values among A, B, C tips, at V=226m/min, d=0.4mm, and f=0.31-0.61mm/rev, Ra values for B.C tips are about 17% less than tip A. 4. The experimental tool wear equations were derived for A, B, C tips and from these equations, the tool life($\textrm{T}_{\textrm{L}}$) baced on the I.S.O. criteria was calculated to be $\textrm{T}_{\textrm{L}}$<$\textrm{T}_{\textrm{LB}}$<$\textrm{T}_{\textrm{LC}}$ for both flank wear($\textrm{V}_{\textrm{B}}$) and boundary wear($\textrm{V}_{\textrm{N}}$). Hence, the coated tips are superior to the uncoated tip and tip C is considered to be the best. 5. The cutting resistance may be slightly reduced and the surface rounghness improved when the damper is used especially when V>100 m/min. Therefore this damping device is considered to be effective and practical. The experimental surface roughness equations were also derived. Based on the vibration test, it is established that the surface roughness improvement was the result of amplitude reduction made possible by the damper.

• Journal of the Institute of Convergence Signal Processing
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• v.16 no.3
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• pp.83-89
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• 2015

Connected component labeling (CCL) is a mandatory step in image segmentation where objects are extracted and uniquely labeled. CCL is a computationally expensive operation and thus is often done in parallel processing framework to reduce execution time. Various parallel CCL methods have been proposed in the literature. Among them are NSZ label equivalence (NSZ-LE) method, modified 8 directional label selection (M8DLS) method, HYBRID1 method, and HYBRID2 method. Soh et al. showed that HYBRID2 outperforms the others and is the best so far. In this paper we propose a new hybrid parallel CCL algorithm termed as HYBRID3 that combines selective four directional label search (S4DLS) with label backtracking (LB). We show that the average percentage speedup of the proposed over M8DLS is around 60% more than that of HYBRID2 over M8DLS for various kinds of images.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.179-179
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• 2003

현재 차세대 메모리로 연구되고 있는 것 중 가장 각광 받는 것은 PRAM 이다. MRAM의 경우 복잡한 공정 때문에 상용화에 많은 어려움이 따르는데 반해 PRAM은 DRAM과 유사한 구조를 가지고 있기 때문에 기존 DRAM의 공정라인을 사용할 수 있다는 장점을 가지고 있다. 하지만 PRAM은 높은 작동전류가 필요하다는 단점을 가지고 있다. 따라서 PRAM이 상용화 되기 위해서는 2mA 이하의 작동전류에서 상변환이 일어나야 한다. 여기서 말하는 상변환이란 결정질 상태를 비정질 상태로 변환 시키는 것을 의미한다. 본 연구에서는 우선 8F$^2$ 크기(F=0.15$\mu\textrm{m}$)의 DRAM 단위소자 메모리 구조를 이용하여 lT/lRPCRAM 모델을 구축하였다. 구축된 모델을 이용하여 요구되는 작동전류(2mA이하)에서의 PRAM의 온도 분포를 시뮬레이션을 통하여 예측하였다. 또한 단위소자를 구성하는 재료의 물성 변화가 소자 내부의 온도 분포에 미치는 영향을 분석하였다.

• ETRI Journal
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• v.17 no.1
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• pp.1-10
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• 1995

We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.