• Journal of electromagnetic engineering and science
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• v.18 no.1
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• pp.35-40
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• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.467-469
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• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto Y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.287-290
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• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.3
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• pp.231-234
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• 2008

For the applications which need a micro-power supply such as thin and flat displays, micro-robot, and micro-system, it is especially necessary to integrate the passive components because they typically need more than 2/3 of the space of the conventional circuit. Therefore, we have designed and fabricated a novel piezoelectric micro transformer using the PZT thin film and MEMS technologies for application to the energy supply device of the micro-systems. The dimensions of the micro-transformer is $1000{\mu}m\;{\times}\;400{\mu}m\;{\times}\;4.8{\mu}m$ $(length{\times}width{\times}thickness)$. The dynamic displacement of around $9.2{\pm}0.064{\mu}m$ was observed at 10 V. The dynamic displacement varied almost linearly with applied voltage. The average voltage gain (step-up ratio) was approximately 2.13 at the resonant frequency $(F_r=8.006KHz)$ and load resistance $(R_L)$ of 1 $M{\Omega}$.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.818-821
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• 2012

M2M 서비스 지원을 위한 이동통신 인프라 기술은 3GPP에서 MTC(Machine Typer Communications)라 부른다. 최근 3GPP SA1, SA2 에서는 MTC 디바이스와 MTC 서버 통신 모델 기반의 서비스 모델 및 지원에 관한 네트워크 구조 기술표준이 추진되었다. 이 후 후속 작업으로 3GPP SA1에서는 TR 22.888(MTCe: Study on Enhancements for MTC) 문서를 통해 MTC 디바이스 간 통신 시나리오 및 use case 개발이 추진 중이다. TR 22.888 문서에는 MTC 디바이스 간 통신 접속 시나리오 및 use case를 정의하고 이에 대한 3GPP 네트워크 요구사항을 개발하고 있다. 현재 TR 22.888v0.7 에서는 5가지의 MTC 디바이스 간 통신 시나리오가 개발되었다. 각 시나리오는 MTC 디바이스가 접속을 원하는 원격 MTC 디바이스와 연결 설정 과정에서 직접연결, MTC 서버를 통한 연결, 네트워크/MTC 서버 내에 이름 분석 기능(name resolution function) 지원을 통한 연결, 그룹 통신 내 MTC 디바이스 간 연결, 네트워크 코디네이션(network Coordination) 지원을 통한 연결 등으로 구분된다. 본 논문에서는 이와 같은 M2M에서 디바이스간 직접 통신에 관한 시나리오 및 usecase를 분석한다.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.242-246
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• 1999

For the fabrication of fault current limiting device using HTSC thick film, YBa$_2Cu_3O_x$ superconducting thick film was formed by surface diffusion process of the Y$_2BaCUO_5$ and the mixed compound of (3BaCuO$_2$+2CuO) expected to be liquid phase above the peritectic temperature of YBa$_2Cu_3O_x$. For the surface diffusion, the compounds of 3BaCuO$_2$+2CuO mixed with binder material was patterned on Y$_2BaCUO_5$ substrate by the screen printing method. After proper sintering, the characteristics of current limit on thick film fabricated was measured. The thick film was able to limit the current from 2.8213 mA$_{rms}$nu to 4.2034 mA$_{rms}$ with 500${\omega}$ load resistance, and from 4.1831 mA$_{rms}$ to 4.2150 mA$_{rms}$ with 10${\omega}$ load resistance.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.442-448
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• 2022

Intermediate-level radioactive waste (ILW) is not subject to legal approval for cave disposal in Korea. To solve this problem, a spent resin treatment device that separates ¹⁴C-containing resin from zeolite/activated carbon and desorbs ¹⁴C through a microwave device has been developed. In this study, we evaluated the radiological safety of the operators performing repair work in the event of a failure in such a device treating 1 ton of spent resin mixture per day. Based on the safety evaluation results, it is possible to formulate a design plan that can ensure the safety of workers while developing a commercialized device. When each component of the resin treatment device can be repaired from the outside, the maximum and minimum allowable repair times are calculated as 263.2 h and 27.7 h for the ¹⁴C-detached resin storage tank and zeolite/activated carbon storage tank, respectively. For at least 6 h per quarter, the worker's annual dose limit remains within 50 mSv/year; further, over 5 years, it remained within 100 mSv. At least 6 h of repair time per quarter is considered, under conservative conditions, to verify the radiological safety of the worker during repair work within that time.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.545-550
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• 2013

We present a tactile information transceiver using a friction-tunable slider-pad. While previous tactile information devices were focused on either input or output functions, the present device offers lateral position/vertical direction detection and texture expression. In characterizing the tactile input performance, we measured the capacitance change due to the displacement of the slider-pad. The measured difference for a z-axis click was 0.146 nF/$40{\mu}m$ when the x-y axis navigation showed 0.09 nF/$750{\mu}m$ difference. In characterizing the texture expression, we measured the lateral force due to a normal load. We applied a voltage between parallel electrodes to induce electrostatic attraction in DC and AC voltages. We measured the friction under identical fingertip action conditions, and obtained friction in the range of 32-152 mN and lateral vibration in the force range of 128.1 mN at 60 V, 2 Hz. The proposed device can be applied to integrated tactile interface devices for mobile appliances.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.3
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• pp.663-668
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• 2016

Without the interference of man in traditional single-device control system P2M way to control the device by a person to the development of the Internet of Things it was changing the way the M2M communication between devices possible. The attention of the user on the IoT to this development, but this increase was caused problems the system is insufficient to help the understanding of the IoT technologies to meet them. Therefore, to understand the operation of the IoT technology system that can easily expressed is required. In this paper, we design and implement a simulation system that can monitor the process of relationships between devices, such as when a user event occurs, the sensor, SNS and the XML-based collaboration to meet users' needs. Further, the respective functions for the maintenance and updating of the simulation system is proposed to make API.