The study on characterization and fabrication of current limiting device using HTSC-thick film

고온초전도후막을 이용한 전류제한소자제작 및 특성연구

For the fabrication of fault current limiting device using HTSC thick film, YBa$_2Cu_3O_x$ superconducting thick film was formed by surface diffusion process of the Y$_2BaCUO_5$ and the mixed compound of (3BaCuO$_2$+2CuO) expected to be liquid phase above the peritectic temperature of YBa$_2Cu_3O_x$. For the surface diffusion, the compounds of 3BaCuO$_2$+2CuO mixed with binder material was patterned on Y$_2BaCUO_5$ substrate by the screen printing method. After proper sintering, the characteristics of current limit on thick film fabricated was measured. The thick film was able to limit the current from 2.8213 mA$_{rms}$nu to 4.2034 mA$_{rms}$ with 500${\omega}$ load resistance, and from 4.1831 mA$_{rms}$ to 4.2150 mA$_{rms}$ with 10${\omega}$ load resistance.