• 제목/요약/키워드: M184V

검색결과 59건 처리시간 0.023초

질화탄탈박막을 이용한 세라믹 압력센서의 제작 (The Fabrication of a Ceramic Pressure Sensor Using Tantalum Nitride Thin-Films)

  • 정수용;최성규;이종춘;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.181-184
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    • 2002
  • This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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서브 피피엠 레벨 미세기전 가스 센서 (Sub-ppm level MEMS gas sensor)

  • 고상춘;전치훈;송현우;박선희
    • 센서학회지
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    • 제17권3호
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    • pp.183-187
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    • 2008
  • A sub-ppm level MEMS gas sensor that can be used for the detection of formaldehyde (HCHO) is presented. It is realized by using a zinc oxide (ZnO) thin-film material with a Ni-seed layer as a sensing material and by bulk micromachining technology. To enhance sensitivity of the MEMS gas sensor with Ni-seed layer was embedded with ZnO sensing material and sensing electrodes. As experimental results, the changed sensor resistance ratio for HCHO gas was 9.65 % for 10 ppb, 18.06 % for 100 ppb, and 35.7 % for 1 ppm, respectively. In addition, the minimum detection level of the fabricated MEMS gas sensor was 10 ppb for the HCHO gas. And the measured output voltage was about 0.94 V for 10 ppb HCHO gas concentration. The noise level of the fabricated MEMS gas sensor was about 50 mV. The response and recovery times were 3 and 5 min, respectively. The consumption power of the Pt micro-heater under sensor testing was 184 mW and its operating temperature was $400^{\circ}C$.

완충용액과 효소고정화막의 조성에 따른 pH-ISFET 포도당센서의 감응특성 (Optimization of Response Characteristics of pH-ISFET Glucose Sensor)

  • 이흥락;양승태;정동숙;김창수;손병기
    • 분석과학
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    • 제5권2호
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    • pp.177-184
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    • 1992
  • pH-ISFET와 glucose oxidase막으로 구성되어 있는 포도당센서를 제조하고, 그 감응특성을 조사하였다. pH-ISFET 포도당센서는 pH-ISFET의 gate 위에 glutaraldehyde로서 bovine serum albumin과 glucose oxidase를 고정화시켜서 제작하였다. pH-ISFET 포도당센서의 감응에 미치는 완충용액의 pH 및 농도와 효소의 양의 영향에 대하여 조사였다. 합성생리염수(pH 7.4)로 만든 포도당용액에 대한 감응특성은 다음과 같다. 곧, 직선감응농도 범위, 감응기울기(감도) 및 감응시간은 각각 $1.0{\times}10^{-4}{\sim}6.0{\times}10^{-3}M$, 4.1 mV/decade 및 12~15분이다.

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배터리 전류의 정밀 측정을 위한 단일 비트 2차 CIFF 구조 델타 시그마 모듈레이터 (A Single-Bit 2nd-Order CIFF Delta-Sigma Modulator for Precision Measurement of Battery Current)

  • 배기경;천지민
    • 한국정보전자통신기술학회논문지
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    • 제13권3호
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    • pp.184-196
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    • 2020
  • 본 논문에서는 배터리 관리 시스템 (BMS)에서 2차 전지 배터리를 통해 흐르는 전류의 정밀한 측정을 위한 cascaded-of-integrator feedforward (CIFF) 구조의 단일 비트 2차 델타-시그마 모듈레이터를 제안하였다. 제안된 모듈레이터는 2개의 스위치드 커패시터 적분기, 단일 비트 비교기, 비중첩 클록 발생기 및 바이어스와 같은 주변 회로로 구현하였다. 제안된 구조는 낮은 공통 모드 입력 전압을 가지는 low-side 전류 측정 방법에 적용되도록 설계되었다. Low-side 전류 측정 방법을 사용하면 회로 설계에 부담이 줄어들게 되는 장점을 가진다. 그리고 ±30mV 입력 전압을 15비트 해상도를 가지는 ADC로 분해하기 때문에 추가적인 programmable gain amplifier (PGA)를 구현할 필요가 없어 수 mW의 전력소모를 줄일 수 있다. 제안된 단일 비트 2차 CIFF 델타-시그마 모듈레이터는 350nm CMOS 공정으로 구현하였으며 5kHz 대역폭에 대해 400의 oversampling ratio (OSR)로 95.46dB의 signal-to-noise-and-distortion ratio (SNDR), 96.01dB의 spurious-free dynamic range (SFDR) 및 15.56비트의 effective-number-of-bits (ENOB)을 달성하였다. 델타 시그마 모듈레이터의 면적 및 전력 소비는 각각 670×490㎛2 및 414㎼이다.

Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ Intrinsic 조셉슨 접합의 자기장 효과 (Magnetic field behavior of Bi$_2CaCu_2O_{8+{\delta}}$ Intrinsic Josephson Junctions)

  • 이주형;이헌주;정연욱;이수연;김정구
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.178-184
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    • 1999
  • We have measured I-V characteristics of Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ mesa containing a small number of intrinsic stacked Josephson junctions in a magnetic field. We fabricated mesa with an area of 40${\times}$40 ${\mu}$m$^2$ containing 3${\sim}$20 intrinsic junctions. We applied magnetic field perpendicular to He CuO$_2$ planes up to 5T. We observed flux-flow branches and flux-flow steps in the I-V characteristics which might be due to collective motion of Josephson vortices in the long junction limit. In a parallel field, critical current I$_c$ varies as I$_c$(B) ${\sim}$ exp(-B/B$_0$), where B$_0$ is about 2T, which is consistent with the theoretical model. DC and AC intrinsic Josephson effects are also discussed.

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Improvement of Electrochemical Properties and Thermal Stability of a Ni-rich Cathode Material by Polypropylene Coating

  • Yoo, Gi-Won;Son, Jong-Tae
    • Journal of Electrochemical Science and Technology
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    • 제7권2호
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    • pp.179-184
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    • 2016
  • The interface between the surface of a cathode material and the electrolyte gives rise to surface reactions such as solid electrolyte interface (SEI) and chemical side reactions. These reactions lead to increased surface resistance and charge transfer resistance. It is consequently necessary to improve the electrochemical characteristics by suppressing these reactions. In order to suppress unnecessary surface reactions, we coated cathode material using polypropylene (PP). The PP coating layer effectively reduced the SEI film that is generated after a 4.3 V initial charging process. By mitigating the formation of the SEI film, the PP-coated Li[(Ni0.6Co0.1Mn0.3)0.36(Ni0.80Co0.15Al0.05)0.64)]O2(NCS) electrode provided enhanced transport of Li+ ions due to reduced SEI resistance (RSEI) and charge transfer resistance (Rct). The initial charge and discharge efficiency of the PP-coated NCS electrode was 96.2 % at a current density of 17 mA/g in a voltage range of 3.0 ~ 4.3 V, whereas the efficiency of the NCS electrode was only 94.7 %. The presence of the protective PP layer on the cathode improved the thermal stability by reducing the generated heat, and this was confirmed via DSC analysis by an increased exothermic peak.

SOLVING OF SECOND ORDER NONLINEAR PDE PROBLEMS BY USING ARTIFICIAL CONTROLS WITH CONTROLLED ERROR

  • Gachpazan, M.;Kamyad, A.V.
    • Journal of applied mathematics & informatics
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    • 제15권1_2호
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    • pp.173-184
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    • 2004
  • In this paper, we find the approximate solution of a second order nonlinear partial differential equation on a simple connected region in $R^2$. We transfer this problem to a new problem of second order nonlinear partial differential equation on a rectangle. Then, we transformed the later one to an equivalent optimization problem. Then we consider the optimization problem as a distributed parameter system with artificial controls. Finally, by using the theory of measure, we obtain the approximate solution of the original problem. In this paper also the global error in $L_1$ is controlled.

표면 요철을 가지는 탄소 섬유/에폭시 복합재료의 마찰 및 마모 특성 (Tribological Behaviors of Carbon-Epoxy Composite with surface grooves)

  • 김성수;이대길
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2004년도 추계학술발표대회 논문집
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    • pp.180-184
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    • 2004
  • The tribological behavior of carbon epoxy composites whose surfaces have many small grooves of $100\mu m$ width was experimentally investigated with respect to the sliding direction against groove orientation, surface pressure (P) and velocity (V). The wear mechanism of the composites was observed to calculate the wear volume with respect to the friction coefficient using scanning electron microscopic (SEM). Experimental results show that the abrasive wear is dominant wear mechanism for the grooved composite surface and the friction and wear are greatly reduced when the sliding direction is parallel to the axis of groove because abrasive particles are removed through the grooves effectively.

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칩상호 광접속용 GaAs 광전집적회로의 기본 공정 I (OEIC 개관;Zn-확산;SL 제작을 위한 초박막 성장) (GaAs OEIC Unit Processes for chip-to-chip Interconnection I (OEIC overview ; Zn-diffusion ; SL layer growing))

  • 지정근
    • 한국광학회:학술대회논문집
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    • 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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    • pp.180-184
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    • 1989
  • Overviews of vertical and horizontal GaAs/AlGaAs OEIC are shown. Researching double Zn diffusion process, we obtain Xj=At1/2-Bd1, where A=2.5${\mu}{\textrm}{m}$/[hr]1/2, B=0.625, of which process is recommended for exact diffusion interface area control of GaAs/AlGaAs. It is proved to be 100A/100A AlAs/GaAs using MOCVD by measurement of photo-luminescence which shows a luminescence peak corresponding to the 798.4nm wavelength calculated values of 38meV ground state above GaAs conduction band.

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[10]-Gingerol Induces Intrinsic Apoptosis in A2058 Human Melanoma Cells

  • Guon, Tae Eun;Chung, Ha Sook
    • 한국식품영양학회지
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    • 제35권3호
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    • pp.178-184
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    • 2022
  • The objective of the present study was to investigate the molecular mechanisms involved in the activity of [10]-gingerol using A2058 human melanoma cells. [10]-Gingerol inhibited the proliferation of A2058 cells by 50% at a concentration of 52 μM. Such inhibition was dose-dependent accompanied by morphological change indicative of apoptosis. Furthermore, flow cytometric analysis by Annexin V and PI double staining showed that [10]-gingerol increased the extent of apoptosis. Analysis of the mechanism of these events indicated that [10]-gingerol increased the ratio of Bax to Bcl-2, resulting in the activation of caspase-9, caspase-3, and poly-ADP-ribose polymerase in a dose-dependent manner.