• Journal of The Korean Astronomical Society
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• v.50 no.3
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• pp.79-92
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• 2017

We present a BV I optical photometric study of the old open cluster Ruprecht 6 using the data obtained with the SMARTS 1.0 m telescope at the CTIO, Chile. Its color-magnitude diagrams show the clear existence of the main-sequence stars, whose turn-off point is located around $V{\approx}18.45mag$ and $B-V{\approx}0.85mag$. Three red clump (RC) stars are identified at V = 16.00 mag, I = 14.41 mag and B - V = 1.35 mag. From the mean $K_s-band$ magnitude of RC stars ($K_s=12.39{\pm}0.21mag$) in Ruprecht 6 from 2MASS photometry and the known absolute magnitudes of the RC stars ($M_{K_S}=-1.595{\pm}0.025mag$), we obtain the distance modulus to Ruprecht 6 of $(m-M)_0=13.84{\pm}0.21mag$ ($d=5.86{\pm}0.60kpc$). From the ($J-K_s$) and (B - V ) colors of the RC stars, comparison of the (B - V ) and (V - I) colors of the bright stars in Ruprecht 6 with those of the intrinsic colors of dwarf and giant stars, and the PARSEC isochrone fittings, we derive the reddening values of E(B - V ) = 0.42 mag and E(V - I) = 0.60 mag. Using the PARSEC isochrone fittings onto the color-magnitude diagrams, we estimate the age and metallicity to be: $log(t)=9.50{\pm}0.10(t=3.16{\pm}0.82Gyr)$ and $[Fe/H]=-0.42{\pm}0.04dex$. We present the Galactocentric radial metallicity gradient analysis for old (age > 1 Gyr) open clusters of the Dias et al. catalog, which likely follow a single relation of $[Fe/H]=(-0.034{\pm}0.007)R_{GC}+(0.190{\pm}0.080)$ (rms = 0.201) for the whole radial range or a dual relation of $[Fe/H]=(-0.077{\pm}0.017)R_{GC}+(0.609{\pm}0.161)$ (rms = 0.152) and constant ([Fe/H] ~ -0.3 dex) value, inside and outside of RGC ~ 12 kpc, respectively. The metallicity and Galactocentric radius ($13.28{\pm}0.54kpc$) of Ruprecht 6 obtained in this study seem to be consistent with both of the relations.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.433-433
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• 2010

A microplasma current switch (MPCS) for a device operated in a current mode like organic light-emitting diodes (OLEDs), which features matrix addressability and current switching, is presented as well as its architecture and operational principle. The MPCS utilizes the intrinsic memory and conductivity of plasmas to achieve matrix addressability and current switching. We have fabricated a $100\;mm\;{\times}\;100\;mm$ MPCS panel in which its cell pitch is $1080\;{\mu}m\;{\times}\;1080\;{\mu}m$. The matrix addressability and current switching were verified. In addition, the current-voltage (I-V) characteristic of the unit cell was measured when plasmas were ignited. In principle, the scheme of the MPCS is equivalent to that of a double Langmuir probe diagnosing plasma parameters except for their relative dimensions to a plasma volume. Accordingly, the I-V characteristic was analyzed by a double Langmuir probe theory, and the plasma density and electron temperature were estimated from the I-V curve using a collisional double Langmuir probe theory.

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.47-50
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• 2019

The paper gives the results of the experiments with a model two-section REBCO solenoid cooled by either gaseous helium (GHe) or sub-cooled/solid nitrogen (SN2) in (50-77) K temperature range. The major cooling source was a single-stage cryocooler Sumitomo CH-110 with the cooling power of 175 W and 130 W at 77 K and 50 K respectively. The coil itself was not directly conduction cooled. We compare the time taken by both coolants to obtain the temperature of the magnet of about 50 K and the homogeneity of the temperature distribution within the cryostat. Test results for the coil operation in solid nitrogen together with the comparison of its critical properties in SN2 and GHe are also presented.

• Journal of the Korean Mathematical Society
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• v.42 no.5
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• pp.933-948
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• 2005

Let R be a commutative ring with identity and let M be an R-module. Then M is called a multiplication module if for every submodule N of M there exists an ideal I of R such that N = 1M. Let M be a non-zero multiplication R-module. Then we prove the following: (1) there exists a bijection: N(M)$\bigcap$V(ann$\_{R}$(M))$\rightarrow$Spec$\_{R}$(M) and in particular, there exists a bijection: N(M)$\bigcap$Max(R)$\rightarrow$Max$\_{R}$(M), (2) N(M) $\bigcap$ V(ann$\_{R}$(M)) = Supp(M) $\bigcap$ V(ann$\_{R}$(M)), and (3) for every ideal I of R, The ideal $\theta$(M) = $\sum$$\_{m(Rm :R M) of R has proved useful in studying multiplication modules. We generalize this ideal to prove the following result: Let R be a commutative ring with identity, P $\in$ Spec(R), and M a non-zero R-module satisfying (1) M is a finitely generated multiplication module, (2) PM is a multiplication module, and (3) P$^{n}$M$\neq$P$^{n+1}$ for every positive integer n, then $\bigcap$$^{$\_{n=1}$(P$^{n}$ + ann$\_{R}$(M)) $\in$ V(ann$\_{R}$(M)) = Supp(M) $\subseteq$ N(M).

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.95-95
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• 2008

본 연구에서는 SiGe p-MOSFET을 제작하여 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성을 측정하였다. Si 기판위에 성장한 $Si_{0.88}Ge_{0.12}$으로 제작된 SiGe p-MOSFET의 채널은 게이트 산화막과 20nm 정도의 Si Spacer 층으로 분리되어 있다. 게이트 산화막은 열산화에 의해 70$\AA$으로 성장되었고, 게이트 폭은 $25{\mu}m$, 게이트와 소스/드레인 사이의 거리는 2.5때로 제작되었다. 제작된 SiGe p-MOSFET은 빠른 동작 특성, 선형성, 저주파 노이즈 특성이 우수하였다. 제작된 SiGe p-MOSFET의 ESD 에 대한 소자의 신뢰성과 내성을 연구하기 위하여 SiGe P-MOSFET에 ESD를 lkV에서 8kV까지 lkV 간격으로 가한 후, SiGe P-MOSFET의 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성 변화를 분석 비교하였다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.602-608
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• 2009

In this thesis, output voltage, current and power of solar module were classified by irradiation from data of overall operating characteristics collected for one year in order to manage efficient photovoltaic generation system and deliver maximum power. In addition, from these data, correlations between irradiation of photovoltaic cell and amount of power given by photovoltaic cell was quantitatively examined to deduce optimization of the design and construction of photovoltaic generation system. As I-V characteristics according to a temperature range of 10~50[$^{\circ}C$], the area of I-V characteristics were increased with an increase in temperature. Since this area corresponds to the power, output power is thought to have increased with temperature. As output power characteristics according to a temperature range of 10~50[$^{\circ}C$], output power was increased with an increase in temperature. Since output power increases with temperature increase, the result corresponds well to the related equation on temperature and output power. As I-V characteristics according to a irradiation range of 100~900 [$W/m^2$], voltage and current were increased with an increase in irradiation. The result is thought of as an increase in output power with increasing irradiation. As output power characteristics according to a irradiation range of 100~900 [$W/m^2$], output power was increased with increasing irradiation. This result corresponds well to the related equation on irradiation and output power.

• The Korean Journal of Physiology and Pharmacology
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• v.7 no.2
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• pp.53-57
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• 2003

The glutamate receptors (GluRs) are key receptors for modulatory synaptic events in the central nervous system. It has been reported that glutamate increases the intracellular $Ca^{2+}$ concentration ($[Ca^{2+}]_i$) and induces cytotoxicity. In the present study, we investigated whether the glutamate-induced $[Ca^{2+}]_i$ increase was associated with the activation of ionotropic (iGluR) and metabotropic GluRs (mGluR) in substantia gelatinosa neurons, using spinal cord slice of juvenile rats (10${\sim}21 day). $[Ca^{2+}]_i$ was measured using conventional imaging techniques, which was combined with whole-cell patch clamp recording by incorporating fura-2 in the patch pipette. At physiological concentration of extracellular $Ca^{2+}$, the inward current and $[Ca^{2+}]_i$ increase were induced by membrane depolarization and application of glutamate. Dose-response relationship with glutamate was observed in both $Ca^{2+}$ signal and inward current. The glutamate-induced $[Ca^{2+}]_i$ increase at holding potential of -70 mV was blocked by CNQX, an AMPA receptor blocker, but not by AP-5, a NMDA receptor blocker. The glutamate-induced $[Ca^{2+}]_i$ increase in $Ca^{2+}$ free condition was not affected by iGluR blockers. A selective mGluR (group I) agonist, RS-3,5-dihydroxyphenylglycine (DHPG), induced $[Ca^{2+}]_i$ increase at holding potential of -70 mV in SG neurons. These findings suggest that the glutamate-induced $[Ca^{2+}]_i$ increase is associated with AMPA-sensitive iGluR and group I mGluR in SG neurons of rats.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.425-426
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• 1996

A few optical schemes for the future Russian astrometric satellite ('Struve') are discussed. New optical materials and techniques developed at the Vavilov State Optical Institute are planned to be used for the on-board telescopes. Optical characteristics of the reflecting Schmidt and a three - mirror scheme for the on-board telescopes are compared.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.224-228
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• 1988

Extensive development work which was carried out by Gold Star Cable Co., Ltd. has led to the optimal design, manufacture and test of fully engineered cable system for 345 kV self- contained oil filled (OF) underground cable. Details of design criteria and of tests are given. development of 345kV OF cable results in sucessful operations for ultra-high voltage power transmission requirement.