• Molecules and Cells
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• 제24권3호
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• pp.351-357
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• 2007

Regions (about 3.7-3.8 kb) of the mitochondrial genomes (rrnL-cox1) of two tardigrades, a heterotardigrade, Batillipes pennaki, and a eutardigrade, Pseudobiotus spinifer, were sequenced and characterized. The gene order in Batillipes was $\underline{rrnL}-\underline{V}-\underline{rrnS}-\underline{Q}-\underline{I}$-M-nad2-W-$\underline{C}-\underline{Y}$-cox1, and in Pseudobiotus it was $\underline{rrnL}-\underline{V}-\underline{rrnS}-\underline{Q}$-M-nad2-W-$\underline{C}-\underline{Y}$-cox1. With the exception of the trnI gene, the two tardigrade regions have the same gene content and order. Their gene orders are strikingly similar to that of the chelicerate Limulus polyphemus (rrnL-V-rrnS-CR-I-Q-M-nad2-W-C-Y-cox1), which is considered to be ancestral for arthropods. Although the tardigrades do not have a distinct control region (CR) within this segment, the trnI gene in Pseudobiotus is located between rrnL-trnL1 and trnL2-nad1, and the trnI gene in Batillipes is located between trnQ and trnM. In addition, the 106-bp region between trnQ and trnM in Batillipes not only contains two plausible trnI genes with opposite orientations, but also exhibits some CR-like characteristics. The mitochondrial gene arrangements of 183 other protostomes were compared. 60 (52.2%) of the 115 arthropods examined have the M-nad2-W-C-Y-cox1 arrangement, and 88 (76.5%) the M-nad2-W arrangement, as found in the tardigrades. In contrast, no such arrangement was seen in the 70 non-arthropod protostomes studied. These are the first non-sequence molecular data that support the close relationship of tardigrades and arthropods.

• 한국수정란이식학회지
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• 제13권3호
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• pp.207-212
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• 1998

본 연구는 한우에 있어서 다배란처리에 의한 체내 정상수정란의 생산효율을 극대화하기 위하여 PEG에 용해한 FSH의 1회 피하주사 방법이 현재 사용하고 있는 1일 2회 4일간 근육 주사방법을 대체할 수 있는지를 결정하기 위하여 실시하였다. 연구결과 다회 근육주사 방법과 비교하여 1회 피하주사 방법이 황체수, 총 회수란수 및 이식가능 수정란수에 있어서 현저히 증가 (P〈0.05)하였다. 따라서 한우에 있어서 PEG에 용해시킨 Folltropin-V의 1회 피하주사 방법이 효과적이라고 사료된다.

• ETRI Journal
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• 제37권1호
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• E2M - 전기 전자와 첨단 소재
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• 제6권2호
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• pp.152-160
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• 1993

MNOS 구조에서 23.angs.의 얇은 산화막을 성장한 후 LPCVD방법으로 S $i_{3}$ $N_{4}$막을 각각 530.angs., 1000.angs. 두께로 달리 증착했을때 비휘발성 기억동작에 미치는 전하주입 및 기억유지 특성을 자동 .DELTA. $V_{FB}$ 측정 시스템을 제작하여 측정하였다. 전하주입 측정은 펄스전압 인가전의 초기 플랫밴드전압 0V.+-.10mV, 펄스폭 100ms 이내로 설정하고 단일 펄스전압을 인가하였다. 기억유지특성은 기억트랩에 전하를 포획시킨 직후 $V_{FB}$ 유지와 0V로 유지한 상태에서 $10^{4}$sec까지 측정하였다. 본 논문에서 유도된 산화막 전계에 대한 터넬확률을 적용한 전하주입 이론식은 실험결과와 잘 일치하였으며 본 해석방법으로 직접기억트랩밀도와 이탈진도수를 동시에 평가할 수 있었다. 기억트랩의 포획전하는 실리콘쪽으로의 역 터넬링으로 인한 조기감쇠가 컸으며 $V_{FB}$ 유지인 상태가 초기 감쇠율이 0V로 유지한 경우 보다 낮았다. 그리고 기억유지특성은 S $i_{3}$ $N_{4}$막의 두께보다 기억트랩밀도의 의존성이 크며 S $i_{3}$ $N_{4}$막두께의 축소로 기록전압을 저전압화시킬 수 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Asian-Australasian Journal of Animal Sciences
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• 제14권5호
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• pp.693-696
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• 2001

The effect of replacement of in vitro maturation medium completely with the buffalo follicular fluid (buFF) on in vitro oocyte maturation of buffalo oocytes was studied. 5 to 8 buffalo cumulus oocyte complexes were cultured in a single drop with each of the eight media studied i.e., M199+steer serum (10% v/v), M199+steer serum (10% v/v)+PMSG, M199+buFF (10% v/v), M199+buFF (10% v/v)+PMSG, M199+buFF (50% v/v), M199+buFF (50% v/v)+ PMSG, buFF (100%) and buFF+PMSG at $39^{\circ}C$ and 5% $CO_2$ in air for 24 h. Supplementation of M199 with Steer serum alone resulted in IVM rate of 35% only. When the above medium was supplemented with PMSG, the maturation rate rallied to 82%. Significant increase in the maturation rates were observed when M199 was supplemented with increasing levels of buFF. A further increase in the maturation rate was also obtained when PMSG was incorporated into the medium of M199 supplemented with buFF. The rate of maturation was to the tune of 91% when oocytes were matured in buFF alone which was increased non significantly on the addition of PMSG. Highest maturation rate (97%) obtained with M199+buFF (50%v/v)+PMSG did not differ significantly from that obtained by either M199+buFF (10%v/v)+PMSG or buFF+PMSG. It is suggested that buFF alone without any supplementation can form the effective in vitro maturation medium for buffalo oocytes.

• Natural Product Sciences
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• 제13권4호
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• pp.378-383
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• 2007

Phenathrene derivatives, such as batatasins, are well-known constituents in Dioscorea Rhizoma. Although phenanthrenes have been reported as representative compounds in this plant, standard markers for quality control have been focused on the polar constituents (saponins and purine derivatives). Herein, simple, rapid and reliable HPLC method was developed to determine 3,5-dimethoxyphenanthrene-2,7-diol (DMP) and batatasin-I (BA-I) as non-polar standard maker compounds of Dioscorea Rhizoma. DMP and BA-I were analyzed under optimized HPLC conditions [column: Columbus $5{\mu}$ C18 100A ($30{\times}4.6mm$ i.d., $5{\mu}m$; mobile phase: $H_2O$ with 0.025% $CH_3COOH$ (v/v) for solvent A and $CH_3CN$ with 0.025% $CH_3COOH$ (v/v) for solvent B, gradient elution; flow rate: 2 mL/min; detection: 260 nm), and each experiment was finished within 13 min. Good linearity was achieved in the range from 0.5 to $10.0{\mu}g/mL$ for each compound, and intra- and inter-day precision were in the acceptable levels. The recovery test were performed with three different Dioscorea Rhizoma samples (D. opposita, D. batatas and D. japonica), and showed its accuracy values in the range of 97.2 - 102.8% for three different concentrations of DMP and BA-I. The content levels of DMP and BA-I were ranged under 0.0020%. These results demonstrated that amounts of DMP and BA-I are easily determined with conventional HPLC-UV-DAD method although the content levels were lower than those of saponins and allantoin in Dioscorea Rhizoma. This HPLC method could be used for quality control of various Dioscorea preparations.

• 대한전자공학회논문지SD
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• 제43권6호
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• pp.9-17
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• 2006

SoC(System-On-Chip) 시스템에서 초 저전력 시스템을 구현하기 위한 dynamic voltage and frequency scaling (DVFS)알고리즘에 사용될 시스템 버스의 다중 코어 전압 레벨을 생성해주는 새로운 다계층(multi-level) 코어 전압용 high-speed level up/down Shifter 회로를 제안한다. 이 회로는 내부 회로군과 외부 회로군 사이에서 서로 다른 전압레벨을 조정 접속하는 I/O용 level up/down shifter interface 회로로도 동시에 사용된다. 제안하는 회로는 인터페이스 접속에서 불가피하게 발생하는 속도감쇄와 Duty Ratio 불안정 문제를 최소화하는 장점을 갖고 있다. 본 회로는 500MHz의 입력 주파수에서 $0.6V\sim1.6V$의 다중 코어 전압을 각 IP들에서 사용되는 전압레벨로, 또는 그 반대의 동작으로 서로 Up/Down 하도록 설계하였다 그리고 제안하는 I/O 용 회로의 level up shifter는 500MHz의 입력 주파수에서 내부 코어 용 level up shifter의 출력전압인 1.6V를 I/O 전압인 1.8V, 2.5V, 3.3V로 전압레벨을 상승 하도록 설계하였으며, level down shifter는 반대의 동작으로 1Ghz의 입력 주파수에서 동작하도록 설계하였다. 시뮬레이션 및 결과는 $0.35{\mu}m$ CMOS Process, $0.13{\mu}m$ IBM CMOS Process 와 65nm CMOS model 변수를 이용한 Hspice를 통하여 검증하였다. 또한, 제안하는 회로의 지연시간 및 파워소모 분석과 동작 주파수에 비례한 출력 전압의 Duty ratio 왜곡에 대한 연구도 하였다.

• 천문학회보
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• 제37권2호
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• pp.155.2-155.2
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• 2012

CTIO 4m 및 CTIO 1m 망원경으로 Westerlund 2의 UBVI 관측을 수행하여, CTIO 4m SDSS $u$ filter의 적색광누출 현상을 발견하였고 그 영향을 분석하였다. 적색광누출 현상은 filter의 투과함수가 설계와는 달리 장파장 영역에서 투과 존재하는 현상으로, CTIO 4m SDSS $u$ filter의 경우 B-V>1.4, V-I>2.0에서 그 영향이 나타나기 시작한다. SDSS $u$ filter의 적색광누출 현상은 별의 고유색지수와 상관없이 관측된 색지수가 클수록 영향이 크며, $B-V{\leq}1.8$, $V-I{\leq}2.8$의 범위에서는 보정이 가능하다. CTIO 1m B filter에서는 성간소광을 받지 않은 별과 성간소광을 많이 받은 별의 표준계변환 결과, $B_{CTIO1m}=B_{Standard}-0.055{\times}E(V-V)$에 해당하는 차이를 보였다. 이러한 차이는 CTIO 1m B filter의 투과함수의 단파장 쪽 날개부분이 표준 Johnson B filter에 비하여 단파장 쪽으로 많이 치우쳐있기 때문으로 보인다. 특히 Ballmer jump에 해당하는 파장인 370 nm에서 filter의 최대투과율에 비하여 32.2%에 달하는 투과율을 보이는데, 이는 Bessell B filter의 3.1%에 비하여 매우 큰 값이다. CTIO 1m 망원경의 Y4KCam CCD에서는 포화된 화소에 의한 crosstalk 뿐 아니라 포화되지 않은 화소에 의한 crosstalk 현상도 보였다. 짧은 노출을 준 영상에서는 5000 ADU 이상에서는 육안에 의한 crosstalk 확인이 가능하며, 포화되지 않은 밝은 별에 의한 crosstalk을 확인하지 않고 측광할 경우 백색왜성으로 오인할 가능성이 있으므로 측광 과정에서 좌표를 통하여 확인할 필요가 있다.