• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.10a
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• pp.59-65
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• 1997

The calibration of O.M.D is carried out experimentally and is analysed theoretically. O.M.D experimentally measures the change in optical density of artificially contaminated oil which contains Fe powder of 5, 10, 20, 30, 40, 50, 70, 100, 200 ppm. The change in optical density, D$_1$ means the logarithmic transmittance of I$_0$ over $I_1 D_2$ denotes the logarithmic transmittance I$_2$ over I$_1$ on electromagnetic force which arranges the ferrous particles along the line of magnetic force. The theoretical D$_1$ which increases linearly as increasing Fe concentrations, is analysed by light attenuation theory. The difference between theoretical D$_1$ and experimental D$_1$ is due to the attenuation of micro bubbles and the agglomeration of fine particles in the sample oil. The calibrated O.M.D is applied to the sample oil from the high-powered diesel engine. Also the results are compared with those out of the off-line techniques such as JOAP and ICP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.935-938
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• 2011

The etching characteristics of ZnO and etch selectivities of ZnO to $SiO_2$ in $SF_6$/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at $SF_6$(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in $SF_6$/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.915-918
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• 2010

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.130-137
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• 1994

Indium, element of group III, was refined by using zone refining for high purity refinement. We have found the impurities of T1, Zn, Fe, Cd, Pb, Ni, Cu, Sn in the refined indium with ICP-AES, so that 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.7 ppm, 2.8 weight ppm of Cd was reduced to 2.5 ppm and 14.0 weight ppm of Sn was reduced to 6.7 ppm with 5 melten zone passes only. 3.9 weight ppm of T1 was reduced to less than 1 ppm, 1.0 weight ppm of Zn was reduced to 0.3 ppm, 2.8 weight ppm of Cd was reduced to less than 1.0 ppm and 14.0 weight ppm of Sn was reduced to 0.4 ppm after vacuum baking with 5 melten zone passes. The surface morpholgy of metal Indium thin film in each conditions showed that porosities were reduced in the front of sampled ingot after vacuum baking with 5 zone melten zone passes. The average electrical resistivity of Indium thin film was reduced from 1.4*10$^{-3}$ .ohm.-cm in Indium origin ingot to 7.9*10$^{-6}$ .ohm.-cm after zone refined with 5 melten zone passes.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1219-1220
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• 2015

마이크로, 나노유체 (micro-, nanofluidics)을 이용한 종이 기반 분석 소자 (paper-based analytical devices, micro-PADs)에 대한 관심이 증가하고 있다. 종이 기반의 분석 소자는 초저가의 비용과 간단한 공정 방법으로 인하여 상용화 컨셉의 바이오센서로 각광받고 있다. 하지만, 종이 기반의 분석 소자는 낮은 검출 한계 (limit of detection, LOD)와 민감도 (sensitivity)의 제한이 있다. 그로 인해 우리는 이온 선택적 투과층 (ion permselective membrane, i.e. Nafion)을 종이 기반의 분석 소자와 결합하여 이온 농도 분극 (ion concentration polarization, ICP) 현상을 구현하여 낮은 검출한계와 민감도를 개선할 수 있었다. 접착력이 있는 테이프 표면에 이온 선택적 투과층을 패터닝 (patterning)하여 종이 기반 분석 소자와 결합하여 매우 간단하게 소자를 제작할 수 있었다. 따라서 종이 기반의 채널 양단에 직류 전압을 인가했을 때 발생하는 ICP 현상으로 인하여 형광 물질 (fluorescence dye)이 농축(preconcentration)되는 것을 확인할 수 있었다. 구체적으로, 초기 농도가 1.55 nM인 형광 물질을 이용하여 200 V의 외부전압을 인가했을 때, 500 초 이내에 1000 배 이상의 농축비를 얻을 수 있었다. 따라서, 외부 전압을 상용화된 건전지 출력값으로 낮출 수 있다면 다양한 종이 기반 분석 소자와 간단한 결합 방법을 통해 상용화 컨셉의 바이오센서로도 구현이 가능할 것이다.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.473-478
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• 2007

Antibiotic composite was synthesized by coprecipitation of silver nitrate into hydroxyapatite. Adsorbed amount of silver ion was examined by the variation of concentration of silver nitrate, temperature, pressure and curing time. Optimum condition for silver-hydroxyapatite adsorption could be achieved. Physical and chemical characteristic properties of synthesized silver-hydroxyapatite were tested by ICP-MS, SEM-EDAX, DSC and XRD. Antibiotic properties for gram positive staphylococcus aureus (ATCC 6538) and gram negative escherichia coli (ATCC 25922) were tested by shake flake method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.285-290
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• 2003

An analytical method for the simultaneous determination of trace Ge, As and Se in biological samples by inductively coupled plasma/mass spectrometry has been investigated. The effects of added organic gas into the coolant argon gas on the analyte signal were studied to improve the detection limit, accuracy and precision. The addition of a small amount of methane (10 mL/min.) into the coolant gas channel improved the ionization of Ge, As and Se. The analytical sensitivity of the proposed Ar/CH₄system was superior by at least two-fold to that of the conventional Ar method. In the present method, the detection limits obtained for Ge, As and Se were 0.014, 0.012 and 0.064 ㎍/L, respectively. The analytical reliability of the proposed method was evaluated by analyzing the certified standard reference materials (SRM). Recoveries of 99.9% for Ge, 103% for As, 96.5% for Se were obtained for NIST SRM of freeze dried urine sample. The proposed method was also applied to the biological samples.