• Journal of Energy Engineering
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• v.23 no.4
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• pp.123-129
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• 2014

ESCO industry should guarantee the energy saving performance with M&V such as developed countries. The application of the ESCO M&V is a necessary condition on energy saving performance. This study recommends a goal, direction, and order of application and suggests selection of M&V between option A, option B, option C, option D by energy conservation technology in Korea, with reference to the examples from IPMVP and applied in US and Japan. In the future, it is needed to study on the guideline for plan report and result report of M&V based on a goal, direction, and selection of M&V option.

• Journal of Energy Engineering
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• v.23 no.2
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• pp.199-206
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• 2014

ESCO industry should guarantee the energy saving performance in response to changes of regulations ESCO. In this point, the application of the M&V is important task on energy saving performance. Therefore, we need to examine the contents of practice for the M&V in developed countries. Between energy user and ESCO, it is important to provide and measure the energy saving performance by guarantee of energy savings performance contracts. After 2013 ESCO business began focusing on guaranteed savings contracts. For this reason, we need to take M&V cases recommended from IPMVP and applied in United States and Japan. Therefore, we should be ready about M&V application for the real conditions of ESCO.

• The Korean Journal of Nuclear Medicine Technology
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• v.19 no.2
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• pp.55-62
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• 2015

Purpose Various methods for reducing radiation exposure have been continuously being developed. The aim of this study is to evaluate effectiveness of dose reduction, image quality and PET SUV changes by applying combination of automatic exposure dose(AEC), automated dose-optimized selection of X-ray tube voltage(CAREkV) and sinogram affirmed iterative reconstruction(SAFIRE) which can be controled by user. Materials and Methods Torso, AAPM CT performance and IEC body phantom images were acquired using biograph mCT64, (Siemens, Germany) PET/CT scanner. Standard CT condition was 120 kV, 40 mAs. Radiation exposure and noise were evaluated by applying AEC, CAREkV(120 kV, 40 mAs) and SAFIRE(120 kV, 25 mAs) with torso phantom compare to standard CT condition. And torso, AAPM and IEC phantom images were acquired with combination of 3 methods in condition of 120 kV, 25 mAs to evaluate radiation exposure, noise, spatial resolution and SUV changes. Results When applying AEC, CTDIvol and DLP were decreased by 50.52% and 50.62% compare to images which is not applying AEC. mAs was increased by 61.5% to compensate image quality according to decreasing 20 kV when applying CAREkV. However, CTDIvol and DLP were decreased by 6.2% and 5.5%. When reference mAs was the lower and strength was the higher, reduction of radiation exposure rate was the bigger. Mean SD and DLP were decreased by 2.2% and 38% when applying SAFIRE even though mAs was decreased by 37.5%(from 40 mAs to 25 mAs). Combination of 3 methods test, SD decreased by 5.17% and there was no significant differences in spatial resolution. And mean SD and DLP were decreased by 6.7% and 36.9% compare to 120 kV, 40 mAs with AEC. For SUV test, there was no statistical differences(P>0.05). Conclusion Combination of 3 methods shows dose reduction effect without degrading image quality and SUV changes. To reduce radiation exposure in PET/CT study, continuous effort is needed by optimizing various dose reduction methods.

• Journal of the Korea Society for Simulation
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• v.24 no.3
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• pp.1-8
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• 2015

Verification, Validation & Accreditation (VV&A) process is widely applied in various disciplines as a method of acquiring the credibility for M&S tools. The guideline of VV&A states that the detailed process can be established flexibly according to the needs and the availability of resources. For example, DAPA (Defense Acquisition Program Administration) guideline suggests that the accreditation process in the VV&A can be omitted if necessary. On this study, we first introduce and describe V&V process. Accreditation process is omitted due to limited time and resources. However, the proposed V&V is sufficient for our needs. Finally, we apply the proposed process of V&V to the System-Integrated Simulator of "Raybolt", Medium-Range Infantry Missile System, for the acquisition of the M&S credibility.

• Journal of IKEEE
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• v.23 no.3
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• pp.1061-1067
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• 2019

In this paper, a highly integrated 3-channel DC-DC converter is designed using power transistor width scaling (PTWS). For positive voltage, $V_{POS}$, a boost converter is designed using the set-time variable pulse width modultaion (SPWM) dual-mode and PTWS to improve efficiency at light load. For negative voltage, $V_{NEG}$, a 0.5 x regulated inverting charge pump is designed with pulse skipping modulation (PSM) controller to reduce power consumption, and for an additional positive voltage, $V_{AVDD}$, a LDO circuit is designed. The proposed DC-DC converter has been designed using a $0.18{\mu}m$ BCDMOS process. Simulation results show that the proposed converter has power efficiency of 56%~90% for load current range of 1 mA~70 mA and output ripple voltage less than 5 mV at positive voltage.

• ETRI Journal
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• v.14 no.1
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• pp.40-51
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• 1992

$0.25{\mu} m$ 급 pMOSFET소자를 구현하기 위해, $P^+$ 폴리실리콘을 적용한 pMOS를 제작하였으며, $p^+$ 폴리실리콘 게이트 소자에서 심각하게 문제가 되고 있는 붕소이온 침투현상을 조사하고 붕소이온 침투가 일어나지 않는 최적열처리온도를 조사하였다. 소자제조 공정중 게이트 공정만 전자선 (EBML300)을 이용하여 직접묘사하고 그 이외의 공정은 stepper(gline) 을 사용하는 Mix & Match 방법을 사용하였다. 또한 붕소이온 침투현상을 억제하기 위한 한가지 예로서, 실리콘산화막과 실리콘질화막을 적층한 ONO(Oxide/Nitride/Oxide) 구조를 게이트 유전체로 적용한 소자를 제작하여 그 가능성을 조사하였다. 그 결과 $850^{\circ}C$의 온도와 $N_2$ 분위기에서 30분동안 열처리 하였을 경우, 붕소이온의 침투현상이 일어나지 않음을 SIMS(Secondary Ion Mass Spectrometer) 분석 및 C-V(Capacitance-Voltage) 측정으로 확인할 수 있었으며 그 이상의 온도에서는 붕소이온이 침투되어 flat band전압(Vfb)을 변화시킴을 알았다. 6nm의 얇은 게이트 산화막 및 $0.1{\mu} m$ 이하의 LDD(Lightly Doped Drain) $p^-$의 얇은 접합을 형성함으로써 소자의 채널길이가 $0.2 {\mu} m$까지 짧은 채널효과가 거의 없는 소자제작이 가능하였으며, 전류구동능력은 $0.26\muA$/$\mu$m(L=0.2$\mu$m, V$_DS$=2.5V)이었고, subthreshold 기울기는 89-85mV/dec.를 얻었다. 붕소이온의 침투현상을 억제하기 위한 한가지 방법으로 ONO 유전체를 소자에 적용한 결과, $900^{\circ}C$에서 30분의 열처리조건에서도 붕소이온 침투현상이 일어나지 않음으로 미루어 , $SiO_2$ 게이트 유전체보다 ONO 게이트 유전체가 boron 침투에 대해서 좋은 장벽 역활을 함을 알았다. ONO 게이트 유전체를 적용한 소자의 경우, subthreshold특성은 84mV/dec로서 좋은 turn on,off 특성을 얻었으나, ONO 게이트 유전체는 막자체의 누설전류와 실리콘과 유전체 계면의 고정전하량인 Qss의 양이 공정조건에 따라 변화가 심해서 문턱전압 조절이 어려워 소자적용시 문제가 된다. 최근 바닥 산화막(bottom oxide) 두께가 최적화된 ONO 게이트 유전체에 대하 연구가 활발히 진행됨을 미루어, 바닥 산화막 최적화가 된다면 더 좋은 결과가 예상된다.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.4
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• pp.63-69
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• 2012

This paper describes novel scheme of a gray scale capacitive fingerprint image for high-accuracy capacitive sensor chip. The typical gray scale image scheme used a DAC of big size layout or charge-pump circuit of non-volatile memory with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit of charge sharing scheme is proposed, which uses DLC(down literal circuit) based on a neuron MOS(vMOS) and analog simple multiplexor. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, a pixel layout size can be reduced and the image resolution can be improved.

• ETRI Journal
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• v.14 no.1
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• pp.52-65
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• 1992

전자선 직접묘사 (E-beam direct writing lithography) 방법을 이용하여 $0.2\mum$ 과 $0.3\mum$ 의 게이트길이를 가지는 NMOS 트랜지스터를 제작하였다. 게이트만 전자선 직접묘사 방법으로 정의하고 나머지는 optical stepper를 이용하는 Mix & Match 방식을 사용하였다. 게이트산화막의 두께는 최소 6nm까지 성장시켰으며, 트랜지스터구조로서는 lightly-doped drain(LDD) 구조를 채택하였다. 짧은 채널효과 및 punch through를 줄이기 위한 방안으로 채널에 깊이 붕소이온을 주입하는 방법과 well을 고농도로 도핑하는 방법 및 소스와 드레인에 $p^-$halo를 이온주입하는 enhanced lightly-doped drain(ELDD) 방법을 적용하였으며, 제작후 성능을 각각 비교하였다. 제작된 $0.2\mum$의 게이트길이를 가지는 소자에서는 문턱전압과 subthreshold기울기는 각각 0.69V 및 88mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance와 포화 드레인전류는 각각 200mS/mm, 0.6mA/$\mum$이었다. $0.3\mum$소자에서는 문턱전압과 subthreshold 기울기는 각각 0.72V 및 82mV/dec. 이었으며, Vds=3.3V에서 측정한 포화 transconductance는 184mS/mm이었다. 이러한 결과는 전원전압이 3.3V일 때 실제 ULSI에 적용가능함을 알 수 있다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5728-5735
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• 2015

This study attempts to verify the applicability of ceramic membrane as a separator by comparing the power generation characteristics in single-chamber MFCs using ceramic membranes to those in the MFCs using nafion membrane. The generated power in MFCs by using acetate as a substrate was more stable than that by using formate, propionate and butyrate, respectively. It was shown that the generated power by using formate substrate in MFCs was unstable and a little higher than that by using acetate, and the power generated by using propionate and butyrate were lower than that by using acetate. In order to find out the Pt catalyst effect, it was compared the power generated in MFCs using Pt-coated carbon cloth as electrode to that power using normal carbon cloth. The power generated in MFCs using Pt-coated carbon cloth as electrode was 1.2 times higher than that using normal carbon cloth. The Pt-coated carbon cloth was about 5 times more expensive than normal carbon cloth. It is suggested that both power generation efficiency and cost together should be considered in selecting electrodes of MFCs. It was found that the ceramic membrane was superior to nafion membrane by comparing to the power generation characteristics obtained. It was shown that average voltage values were $523.67mV{\pm}49.41mV$ by using synthetic wastewater, in MFCs of ceramic membrane as a separator. While average voltage values were $424.09mV{\pm}79.95mV$ by using synthetic wastewater, in MFCs of nafion membrane as a separator. The organic removal efficiency, 41.7% by using ceramic membrane was a little bit higher than 40.8% by using nafion membrane. This research implies ceramic membrane can be a valid alternative to nafion membrane as a separator when considering the power generation and the efficiency of organics removal.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.31-36
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• 2014

In this paper, we developed an intergrated piezoresistive temperature and humidity sensor using nano-technology, and evaluated the properties. In the measuring range from $20^{\circ}C$ to $80^{\circ}C$, output sensitivity of temperature was about 0.75mV/$1^{\circ}C$. Output sensitivity of humidity was about 1.35mV/10%(RH). Therefore, developed sensor suggests that it is possible applicable to the general residential environment.