• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• 통합자연과학논문집
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• 제3권4호
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• pp.215-218
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• 2010

cis,cis-1,2,3,4-Tetraphenylbutadiene has been synthesized and its optical properties are investigated by using UV-Vis absorption and fluorescence spectroscopy. Thin films of tetraphenylbutadiene prepared from thin layer chromatography(TLC) displays strong luminescence and used for the detection of vapor of organic halide. Tetraphenylbutadiene shows dramatic quenching photoluminescence under exposure of chloroform vapor.

• 한국진공학회지
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• 제15권4호
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• pp.404-409
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• 2006

RF magnetron sputtering 법을 이용하여 quartz 기판 위에 spinel 구조의 $ZnGa_2O_4 : Mn^{2+}$ 박막 형광체를 상온에서 증착 하였다. 후 열처리 온도에 따라 박막의 결정성, 표면 거칠기와 조성비가 변하였으며 이는 박막 형광체의 발광특성에 영향을 주었다. 후 열처리 온도가 $500^{\circ}C$에서 $900^{\circ}C$로 올라감에 따라 후 열처리 온도가 $700^{\circ}C$ 일 때 가장 낮은 수치의 표면 거칠기를 보였고 이로 인한 낮은 외부 양자 효율로 인하여 발광특성이 좋지 않았다. 후 열처리 온도가 $800^{\circ}C$ 일 때 결정화 정도가 좋았으며 적당한 표면 거칠기와 화학적 조성비로 인해 최적의 발광특성을 보였다. 반면 후 열처리 온도가 $900^{\circ}C$ 일 때 결정성은 가장 좋았으나 Zn의 높은 증기압으로 인한 화학적 조성비의 깨짐으로 발광특성이 좋지 못하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.920-923
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• 2003

We fabricated composite materials as a pellet structure with the various kinds of inorganic material powder. The composite materials were deposited onto the plastic film by the electron beam evaporation and water vapor transmission rates (WVTRs) were measured by the MOCON facility. As a result of WVTRs, the composite materials had lower WVTR value than any other inorganic materials. So, these films were proposed to protect the organic light emitting device (OLED) from moisture and oxygen. We can consider that the composite thin-film is one of the more suitable candidates for the thin-film passivation layer in the OLED. And, we are processing the XRD, XPS and EPMA to analyze the property of the composite material. We will also analyze properties of the current-voltage and luminescence for lifetime both the composite thin-film passivated OLED and non-passivated OLED.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• 한국재료학회지
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• 제16권7호
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• pp.401-407
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• 2006

ZnO is well-known as a promising material for optical communication systems and electronic displays. ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering, and the effects of sputtering parameters and the annealing conditions on the luminescence in the visible range were investigated. Luminescent properties depended on the crystallinity of films and annealing atmosphere. Highly c-axis oriented ZnO:Er films showed a strong emission band at 465 nm and a weak emission at 525 nm due to the energy transition of $^{4}I_{15/2}-^{4}F_{5/2}\;and\;^{4}I_{15/2}-^{2}H_{11/2}$, respectively. ZnO:Er thin films annealed at air atmosphere were superior to those annealed in $H_2$ in photoluminescence intensity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.316-319
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• 2000

By RF magnetron sputtering ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate. Crystallographic orientation was characterized by x-ray diffraction(XRD). Surface morphology and microstructure were observed by scanning electron microscope(SEM). Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. PL spectrum of ZnGa$_2$O$_4$thin films showed broad band luminescence spectrum.

• 대한기계학회논문집A
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• 제26권5호
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• pp.976-985
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• 2002

The purpose of this paper is that the roughness(Rrms = 31$\AA$, Rp-v = 270$\AA$) of ITO thin film deposited by sputtering method for OELD is improved to Rrms $\leq$ 10$\AA$, Rp-v $\leq$ 80$\AA$ by chemical mechanical polishing(CMP). First, ITO thin films are polished with a variety of consumables (Pads, Slurries) to choose proper some for the roughness improvement and the CMP mechanism of ITO thin films is demonstrated on the ground of the experiment results. Henceforth, the CMP characteristics (Removal rate, Non-uniformity) of chosen consumables are evaluated according to processing conditions (Polishing pressures, Table velocities) and suitable conditions for ITO film CMP are selected. Finally, the electrical and optical properties (Sheet resistance, Transmittance) of ITO thin films are investigated to verify whether or not ITO thin film are still suitable for OELD after polished.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.28-32
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• 1998

This paper reports on photoluminescence (PL), luminescence decay curves, and compositional analysis of porous silicon(PS) which is aged under air ambient by Fourier transform infrared vibrational spectroscopy (FTIR) and by Auger electron spectroscopy (AES). Porous silicos which has been aged under air ambient yields two PL band structures, i.e. blue/violet PL and red PL. The evolution of a blue/violet band is pronounced, especially for thin PS film which is prepared in dilute HF solution. The blue/violet PL band has been observed initially to increrase rapidly with aging, then saturated with further atmospheric aging. The ambient air aged PS exhibits a fast decay time of sub-nanosecond at room temperature and shows appreciably faster decay time than that at 20K. Atmospheric aging of this thin blue/violet luminescing PS yield non-stoichiometric oxide judging from the vibrational spectra of Si-O and AES analysis.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.