• Journal of Radiation Industry
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• v.2 no.1
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• pp.27-34
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• 2008

Photostimulated luminescence (PSL), electron spin resonance (ESR) and thermoluminescence (TL) analyses were conducted to detect whether 258 kinds of extracted and powdered forms food additives were irradiated or not. In a view of the PSL results, 9 kinds of the extracted and powdered samples (3.2%) showed over 5,000 photon counts $(60sec)^{-1}$ and these samples were judged to be irradiation-positive. Thirty nine kinds of the samples (15.6%) yielded 700~5,000 photon counts $(60sec)^{-1}$ and these samples were grouped into irradiation-potential, while the samples showed below 700 photon counts $(60sec)^{-1}$ sec were judged to be irradiation-negative. TL glow curves for minerals separated from 5 samples were detected at $150^{\circ}C$ with high intensity. However, TL analysis did not apply to other irradiation-positive and irradiation-potential samples because the minerals for TL detection were not separated from the samples. ESR measurements for irradiation-positive and irradiation-potential samples, judged by PSL detection, showed no specific signals to irradiation. The results indicated that PSL could be applied to identify irradiation treatment of extracted and powdered food additives, while TL was optional and ESR was not suitable for detection extracted and powdered food additives.

• Journal of radiological science and technology
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• v.29 no.3
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• pp.141-145
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• 2006

In this study, $Eu^{2+}$ ion was used as an activator in order to enhance the PL(photoluminescene) and PSL(photostimulated luminescence) intensity of $MCl_2:Eu^{2+}$(M = Ca, Sr, Ba)phosphors and the chracteristics of PL and PSL of the phosphors were investigated. The emission of $MCl_2:Eu^{2+}$(M = Ca, Sr, Ba) phosphors shows a shift wavelength when the host caution changes. The optimal preparing conditions of $CaCl_2:Eu^{2+}$ phosphor were 0.5 mol％ of $EuCl_2$ and the sintering temperature were $745^{\circ}C$, 45 min. in $H_2$ atmosphere. The PL and PSL spectra of $CaCl_2:Eu^{2+}$ locate in the range of $365{\sim}388\;nm$, peaking at 370 and 380 nm. The optimal preparing conditions of $BaCl_2:Eu^{2+}$ phosphor were 0.5 mol％ of $EuCl_2$ and the sintering temperature were $905^{\circ}C$, 45 min. in $H_2$ atmosphere. The PL and PSL spectra of $BaCl_2:Eu^{2+}$ locate in the range of $370{\sim}460\;nm$, peaking at 398 nm. The optimal preparing conditions of $SrCl_2:Eu^{2+}$ phosphor were 0.5mol％ of $EuCl_2$ and the sintering temperature were $840^{\circ}C$, 45min. in $H_2$ atmosphere. The PL and PSL spectra of $SrCl_2:Eu^{2+}$ locate in the range of $380{\sim}440\;nm$, peaking at 407 nm. The dose response of the $MCl_2:Eu^{2+}$(0.5 mol%)(M = Ba, Sr) phosphors were linear within $0.25{\sim}200\;mGy$ of 100 kV X-ray and the PSL intensity of the $SrCl_2:Eu^{2+}$ and $BaCl_2:Eu^{2+}$ phosphors faded to approximately 60 and 40% respectively after 120 min at room temperature.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.92-97
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• 2013

The luminescence properties of InAs/GaAs quantum dots (QDs) grown by a migration enhanced epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The MEE method supplies materials in a series of alternate depositions with migration enhancing time between each deposition. After In source was supplied for 9.3 s, the growth was interrupted for 5 s. Subsequently, As source was open for 3 (AT3), 4(AT4), 6 (AT6), or 9 s (AT9), and the growth was interrupted for 5 s again. This growth sequence was repeated 3 times for the growth of InAs QDs. The PL peak of the AT3 was 1,140 nm and the PL intensity was very weak compared with that of the other three samples. The PL peak of all samples except the AT3 sample was 1,118 nm, which is blueshifted from 1,140 nm, and the PL intensity was increased compared to that of the AT3. These results can be explained by the increased QD density and the improved QD uniformity. The AT6 sample showed the strongest PL intensity and the narrowest full width at half maximum. The PL decay time of AT6 increased with increasing emission wavelength from 940 to 1,126 nm, reaching a maximum decay time of 1.09 ns at 1,126 nm, and then decreased as the emission wavelength was increased further.

• Journal of the Korean Society of Visualization
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• v.9 no.4
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• pp.41-46
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• 2011

Oxygen sensitive functional particles(OSParticle) were fabricated by three different methods for using the particles as oxygen sensors and PIV tracers. The used methods were a physical coating method, an ion-exchange method and a dispersion polymerization method. The physical coating method is dipping $SiO_2$ hollow particles into dye solution then drying. This method is very simple, but particles are not uniform in diameter and luminescence. The particles fabricated by the ion-exchange method have very uniform diameter and well doped. However, it can not be used in water since the particles are hydrophobic. In case of the dispersion polymerization method, the diameter of OSParticles is quite uniform. The diameter of OSParticles can be changed by controlling the quantity of AIBN (2,2'-azobis isobutyronitrile). For the purpose of dissolved oxygen concentration measurement in micro scale water flows, the dispersion polymerized OSParticles turn out to be the most superior functional particles. The luminescent intensity of OSParticles was tested with the variation of dissolved oxygen concentration in water samples. As a result, the luminescent intensity of OSParticles is monotonically decreased with increasing DO (Dissolved oxygen) concentration of water.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.637-639
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• 1997

Samples of $YTa_7O_{19}$ doped with $Tm^{3+}$ were prepared using the solid state reaction method to investigate their photoluminescence characteristics. The samples were identified by XRD and SEM, and the optical measurement was also carried out. Under 359 nm excitation, $YTa_7O_{19}$ doped with $Tm^{3+}$ exhibited a narrow-band blue emission, at about 455 nm. The maximum emission intensity was obtained at $YTa_7O_{19}$ doped with 0.12 mole $Tm^{3+}$. This revealed the concentration quenching of emission intensity.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.161-165
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• 2002

Ge-doped rnulticomponent oxide glasses were prepared by a conventional melting method. The change of micro structure in glasses was investigated by using PL (photoluminescence) and ESR (electron spin resonance). Before UV irradiation, the PL intensity increased according to germanium contents, but decreased the intensity as soon as UV irradiation. A changed property was recovered near it original properties when it was annealed. These photodarkening and thermal bleaching effect were observed by ESR intrument. These effect did not change the glass phase but vary only change of micro structure.

• Food Science and Biotechnology
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• v.14 no.1
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• pp.1-5
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• 2005

Photostimulated luminescence (PSL), thermoluminescence (TL), electron spin resonance (ESR), and direct epiflourescent filter technique/aerobic plate count (DEFT/APC) were applied to detect dried green, black, and oolong teas irradiated between 0-10 kGy. Teas irradiated at 2.5 kGy and higher showed over 5000 photon counts/60 sec, while non-irradiated teas yielded 650-1000 photon counts/60 sec. TL glow curves for minerals separated from teas were detected at about $300^{\circ}C$ with low intensity in non-irradiated samples, whereas around $150^{\circ}C$ with high intensity in all irradiated samples. Ratio of $TL_1/TL_2$ based on re-irradiation step, showing lower than 0.1 and higher than 1.44 for non-irradiated and irradiated samples, respectively, enhanced reliability of TL results. ESR measurements for irradiated teas showed signals specific to irradiation. Log DEFT/APC ratio increased with irradiation dose; this result could be applied to identify irradiated tea samples.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.295-298
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• 2011

ZnS:Mn, Dy yellow phosphors for White Light Emitting Diode were synthesized by a solid state reaction method using ZnS, $MnSO_4{\cdot}5H_2O$, S and $DyCl_3{\cdot}6H_2O$ powders as starting materials. The mixed powder was sintered at $1000^{\circ}C$ for 4 h in an air atmosphere. The photoluminescence of the ZnS:Mn, Dy phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn, Dy phosphors was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions. The highest photoluminescence intensity of the ZnS:Mn, Dy phosphors under 450 nm excitation was observed at 4 mol% Dy doping. The enhanced photoluminescence intensity of the ZnS:Mn, Dy phosphors was explained by energy transfer from $Dy^{3+}$ to $Mn^{2+}$. The CIE coordinate of the 4 mol% Dy doped ZnS:Mn, Dy was X = 0.5221, Y = 0.4763. The optimum mixing conditions for White Light Emitting Diode was obtained at the ratio of epoxy : yellow phosphor = 1:2 form CIE coordinate.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.