• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.29-32
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• 2001

Hydrogen passivation of Si nanocrystals identifies luminescence mechanism indirectly. Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser After deposition, Si nanocrystallites thin films have been annealed at 600$^{\circ}C$ and 760$^{\circ}C$ in nitrogen ambient, respectively. Hydrogen passivation was subsequently performed at 500$^{\circ}C$ in forming gas (95 % N$_2$ + 5 % H$_2$) for an 1 hour. We report the photoluminescnece(PL) property of Si thin films by the hydrogen passivation. The luminescence mechanism of Si nanocrystallites has also been investigated.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.22-25
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• 2006

Long lasting phosphor materials are in great demand for their applications in the area of light emitting diodes (LEDs), commercial displays and warning signals. After glow longevity, brightness, photo-resistance and chemical and environment stability are most important qualities that are desired for these materials. Alumina as host lattice with various rare earth elements has been found to be good at the same time inexpensive material for the synthesis of the phosphor materials. This communication explored the effect of mixed rare earth metal on the luminescence properties of these materials for the first time. Various permutations and combinations of $Sr^{2+}$ and $Ba^{2+}$ have been investigated in order to achieve robust and high luminescence characteristics in the tailored phosphor materials.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.43-46
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• 1997

Thulium (Tm) has been incorporated into $YAlO_3$ and $YTa_7O_{19}$ host materials to obtain blue phosphors. $Tm^{3+}$-doped $YAlO_3$ and $YTa_7O_{19}$ phosphors were prepared by the conventional solid state reaction method. According to the results of excitation and emission spectra measured at room temperature, the blue emission intensity of $Tm^{3+}$-doped $YTa_7O_{19}$, peaking at 455 nm was much higher than that of $Tm^{3+}-doped\; YAlO_34, peaking at 458 nm. The maximum of relative intensity of $Tm^{3+}-doped\; YAlO_3\; and\; YTa_7O_{19}$ was obtained at the doping concentration of 0.016 and 0.120 mol% $Tm^{3+}$, respectively. These emission spectra revealed the concentration quenching effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.105-108
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• 1998

In the present study, the luminescence characteristics and the effect of conductivity on cathodoluminescene of CaTiO$_3$:Pr was studied using dick specimens sintered at various temperatures and atmosphere. As a sintering temperature was increased from 1100 to 1400 $^{\circ}C$, conductivity of CaTiO$_3$:Pr phosphor was improved and CL brightness was also increased about four times and decay times was reduced from 0.29 to 0.21 msec. And all samples prepared in Ar showed high conductivity, CL brightness and short decay time in comparison with those sintered in air.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.49.2-49
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.49-49
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.24.2-24.2
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• 2006

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.24-27
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• 2013

In this paper, we investigated the effect of luminescence properties of various concentrations of magnesium-doped ZnS:Mn phosphor excited by plasma luminescence device. The PL intensity was evaluated in the range of 300~500 nm excitation wavelengths. We found the highest PL intensity of the phosphors excited by 365 nm and 450 nm was observed at Mg concentrations of 1.4 wt% and 0.8 wt%, respectively. In addition, an emission peak was distinguished at 580 nm wavelength. With increasing Mg dopant level, enhanced PL intensity was observed, which is possibly applicable to color converting materials by blue emission for white light sources. Finally, we evaluated the luminance properties of color converting ZnS:Mn,Mg phosphors with plasma blue light source. the white luminance of plasma light source with CIE(0.36,0.26) was established by color converting phosphors of ZnS:Mn with 0.8 wt% Mg.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1547-1550
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• 2007

$YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

• Journal of the Korean Chemical Society
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• v.39 no.1
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• pp.40-46
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• 1995

A new analytical luminescence method for the Tb+3 and Eu+3 ions was studied using the fluorescence enhancement of the ions on the TLC plate. Compared to the specific emission intensities of the ions in aqueous or ethanol solution, if spotted on the TLC plate, the line intensities were extremely enhanced. There was additional enhancement effect of the lines from the ions on the TLC plate, if treated with ο-phenanthroline. Based on the luminescence enhancement, the detection limit of the ions was lowered more than 6 order of magnitude compared to the luminescence method using solution samples. The energy-transfer mechanism was also explained for the theoretical back ground of the luminescence enhancement.