• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.840-845
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• 2013

In this paper, the broadband frequency double down-converter based on LC filter technologies has been designed and implemented, and its performances are introduced. The Designed frequency double down-converter is consisted with a low-noise amplifier, mixer, IF amplifier, LC filter, DC-block capacitor and RF-bypass capacitor. Especially, instead of active devices of a typical converter, the suggested converter designed using passive devices to provide both low-power consumption and low-cost model. As results of the measurement, the implemented frequency double down-converter realizes the broadband performance with the bandwidth of 100MHz (13~113MHz) at the center frequency of 63MHz, and its gain is approximately 40dB.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.15-18
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• 2013

This paper presents an analog front-end for electroencephalogram(EEG) signal processing. Since EEG signals are typically weak and located at very low frequencies, it is imperative to implement an amplifier with high gain, high common-mode rejection ratio(CMRR) and good noise immunity at very low frequencies. The analog front-end of this paper consists of a programmable-gain instrumentation amplifier and a band-pass filter. A frequency chopping technique is employed to remove the low-frequency noise. The circuits were fabricated in 0.18um CMOS technology and measurements showed that the analog front-end has the maximum gain of 60dB and >100dB CMRR over the programmable gain range.

• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.215-218
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• 2006

In this paper, a small size, $7{\times}6mm^2$, Low Noise Amplifier(LNA) using LTCC process was fabricated with multi-layer structure for 2.4GHz wireless LAN. The measured results demonstrate that the bandwidth is 130 MHz, and the operating frequency is from 2.39GHz to 2.52GHz. The power gain is above 7.3 dB in the operating frequency range and the gain flatness is 0.5 dB. The maximum S11 is -4 dB and the maximum S22 is -7.5 dB. The noise figure is less than 1.83 dB. The measured power gain, S11 and S22 were had poorer performance than the simulation results. The reason for this discrepancy is that the input and output matching was not performed exactly. However, the noise figure of the LTCC low noise amplifier is better than simulation result. It is found that it is possible to fabricate a LTCC low noise amplifier in a small size.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.833-836
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• 1999

In this paper, a wideband MMIC LNA was designed using low Q matching network. Gains of 9.8~12.2 ㏈, and noise figures of 1.7~2.1 ㏈ were obtained from the fabricated wideband MMIC LNA in the frequency ranges of 1.5~2.5㎓. And maximum output power of 10.83 ㏈m were obtained at the center frequency of 2 ㎓. The chip size of the fabricated wideband MMIC low noise amplifier is 1.4 mm$\times$1.4 mm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.5
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• pp.678-681
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• 2020

In this paper, we analyzed the noise figure of cascode low noise amplifier (LNA) based on the measured data of 65nm CMOS devices. By using the channel thermal noise model of transistors, we expanded noise figure equation and divided the equation into three parts to see its contributions to noise figure. We also varied design parameters such as bias point, transistor gate width, and operating frequency. Our results show that different noise sources dominate at the different operating frequencies. One can easily find the noise transition frequency with device models in ahead of the practical design. Therefore, this research provides a low noise design approach for different operating frequencies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.761-767
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• 2007

In this paper, we deal wih a concurrent dual band low noise amplifier for a Radio Frequency Identification(RFID) reader operating at 912MHz and 2.45GHz. The design of the low noise amplifier is based on the TSMC $0.18{\mu}m$ CMOS technology. The chip size is $1.8mm\times1.8mm$. To improve the noise figure of the circuit, SMD components and a bonding wire inductor are applied to input matching. Simulation results show that the 521 parameter is 11.41dB and 9.98dB at 912MHz and 2.45GHz, respectively The noise figure is also determined to 1.25dB and 3.08dB at the same frequencies with a power consumption of 8.95mW.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.121-124
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• 2009

In this paper, the techniques and design focus of flexible gain coltrol of LAN(Low Noise Amplifier) using the TSMC 0.18um CMOS process. The design frequency set up a standard on 2.4GHz that is used in Zigbee system. The design concepts a basic Cascode LNA techniques and a swiching circuit consisted of 4 NMOS of load resistance, which convert the output impedenceby tuning on or off. The result show the gain change by NMOS operated swich. The simulation result is that Gain is 14.07dB-16.79dB and NF(Noise Figure) is 1.06dB-1.09dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.2
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• pp.101-107
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• 1986

Analysis and design procedure for the low noise amplifier design are presented. A Microwave low noise amplifier is designed and fabricated using packaged GaAs FET at the center frequency of 12GHa. The experimental results with respect to the noise figure and power gain are quite agreeable with the design specifications except that the input and output VSWR are slightly higher than the desingned.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.4
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• pp.461-466
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• 1999

A CMOS op amp with rail-to-rail input and output ranges is designed in a one-volt supply. The output stage of the op amp is used in a common source amplifier that operates in sub-threshold region to design a low voltage op amp with rail-to-tail output range. To drive heavy resistor and capacitor loads with rail-to-rail output ranges, a common source amplifier which has a low output resistance is utilized. A bulk-driven differential pair and a bulk-driven folded cascode amplifier are used in the designed op amp to increase input range and achieve 1 V operation. Post layout simulation results show that low frequency gain is about 58 ㏈ and gain bandwidth I MHz. The designed op amp has been fabricated in a 0.8${\mu}{\textrm}{m}$ standard CMOS process. The measured results show that this op amp provides rail-to-rail output range, 56㏈ dc gain with 1 MΩ load and has 0.4 MHz gain-bandwidth with 130 ㎊ and 1 kΩ loads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.