• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• 한국식품영양과학회지
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• 제31권4호
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• pp.621-628
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• 2002

청 매실을 수확한 후 LDPE 필름 포장재에 넣어 상온에서 일정 기간 보관할 때 포장재의 두께가 청매실의 조직 연화에 미치는 영향을 조사하기 위하여, 20, 30, 40$\mu\textrm{m}$두께의 포장재에 청매실 500 g씩을 각각 넣고 8일간 보존하면서 경도의 변화 및 무기성분과 펙틴질 성분의 함량 변화를 정기적으로 측정하여 무포장구의 경우와 비교하였고, 세포벽의 미세구조의 변화를 주사전자현미경으로 관찰하였다. 저장 중 매실의 연화와 관련된 경도와 펙 틴질의 감소 및 가용성펙틴 중 Ca 함량의 감소는 서로 밀접한 관계가 있음을 알 수 있었고, LDPE 30 포장재에 저장된 시료가 8일 동안 무포장구나 다른 포장재에 저장된 시료에 비 해 각종 펙틴질 성분 및 무기 성분의 변화와 그에 따르는 경도 변화가 가장 적었고 가용성 펙틴의 분자량 분포도 초기 상태와 가장 유사하였으며 주사전자현미경에 의하여 관찰된 외 형적인 상태도 LDPE 30 포장재에 저장된 시료가 저장전의 상태를 가장 잘 유지함을 확인할 수 있었다.

• 전기화학회지
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• 제22권3호
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• pp.128-137
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• 2019

리튬은 가장 가벼운 금속일 뿐만 아니라 낮은 환원전위(-3.04 V vs. SHE)와 큰 이론용량($3860mAh\;g^{-1}$)을 가지고 있어 차세대 음극 소재로 연구되고 있다. 리튬 금속을 전극으로 사용하는 리튬이차전지의 경우 전지의 효율과 에너지 밀도 극대화를 위해 얇은 두께의 리튬 전극이 필요하지만 기존의 리튬 박을 제조하는 물리적인 압연 방법으로는 일정수준 이하의 두께를 가지는 리튬 박을 제조하는데 한계가 있다. 본 연구에서는 물리적인 방법 대신 전해도금법으로 박막의 리튬을 전착하여 전해도금 시 사용되는 전해액의 종류와 전착 조건이 전착 특성 및 전착된 리튬의 전기화학 특성에 주는 영향을 확인하였다. 전착 전해액의 농도가 높을 수록 리튬 덴드라이트(dendrite) 형성 억제에 유리한 크고 둥근 형태의 리튬 입자를 형성하였으며 우수한 stripping 효율 (92.68%, 3M LiFSI in DME) 을 나타냈다. 전착 속도(전류 밀도)의 경우 속도 증가에 따라 리튬이 길이 방향으로 성장하여 길고 끝이 뾰족한 형태를 가지는 경향을 보였으며, 이로 인한 비표면적 증가로 전착된 리튬 전극의 stripping 효율이 감소(90.41%, 3M LiFSI in DME, $0.8mA\;cm^{-2}$)하는 경향을 확인하였다. 두 종류의 염과 용매를 조합하여 얻은 1.5M LiFSI + 1.5M LiTFSI in DME : DOL (1 : 1 vol%) (Du-Co) 전해액에서 전착된 리튬 전극이 가장 우수한 stripping 효율 (97.26%) 및 안정적인 가역성을 보였으며, 이는 염의 분해물로 구성된 전극 표면 피막의 Li-F 성분이 주는 안정성 향상과 피막의 유연성을 부여하는 DOL 효과에 기인한 것으로 추정된다.

• 한국수소및신에너지학회논문집
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• 제7권1호
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• pp.29-37
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• 1996

Alkaline water electrolysis has been commercialized as the only large-scale method for a long time to produce hydrogen and the technology is superior to other methods such as photochemical, thermochemical water splitting, and thermal decomposition method in view of efficiency and related technical problem. However, such conventional electrolyzer do not have high electric efficiency and productivity to apply to large scale hydrogen production for energy or chemical feedstocks. Solid polymer electrolyte water electrolysis using a perfluorocation exchange membrane as an $H^+$ ion conductor is considered to be a promising method, because of capability for operating at high current densities and low cell voltages. So, this is a good technology for the storage of electricity generated by photovoltaic power plants, wind generators and other energy conversion systems. One of the most important R&D topics in electrolyser is how to minimize cell voltage and maximize current density in order to increase the productivity of the electrolyzer. A commercialized technology is the hot press method which the film type electrocatalyst is hot-pressed to soild polymer membrane in order to eliminate the contact resistance. Various technologies, electrocatalyst formed over Nafion membrane surface by means of nonelectrolytic plating process, porous sintered metal(titanium powder) or titanium mesh coated with electrocatalyst, have been studied for preparation of membrane-electrocatalyst composites. In this study some experiments have been conducted at a solid polymer electrolyte water electrolyzer, which consisted of single cell stack with an electrode area of $25cm^2$ in a unipolar arrangement using titanium mesh coated with electrocatalyst.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 한국재료학회지
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• 제23권3호
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• 한국자기학회지
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• 제16권3호
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• pp.186-191
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• 2006

자기터널접합 기반의 MRAM(magnetic random access memory)은 자기저항효과를 응용하는 메모리소자로서 비휘발성과 고속 정보처리가 가능할 뿐만 아니라 고집적화 할 수 있는 차세대 통합형 비휘발성 메모리이다. 그러나 기존의 메모리 소자들에 비해 스위칭 산포가 크고, 기록마진(writing margin)이 확보되지 않아 아직까지는 고집적화가 어려운 실정이다. 최근 포화자화가 낮은 NiFeSiB 및 CoFeSiB과 같은 비정질 강자성체를 자기터널접합의 자유층 재료로 사용하여 스위칭 자기장의 거대화를 크게 감소시켜 MRAM의 기록마진을 높이는 연구결과에 관해 정리하여 보았다. 그리고 이러한 물질을 이용하여 자기터널접합의 재생마진(reading margin)과 관련된 터널자기저항비의 인가전압의존성을 저감시킬 수 있었다. 본고에서는 나노자기소자 기술의 중요한 분야인 MRAM의 기술발전 방향과 연구사례를 소개하고자 한다.

• 한국식품영양과학회지
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• 제28권2호
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• pp.429-437
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• 1999

A mathematical model was established for estimating changes in pressure and volume of permeable kimchi packages. The model comprises the CO2 gas production from kimchi and permeation of O2, CO2 and N2 through the permeable film or sheet. Using the developed model, the effects of various packaging variables on the pressure and volume changes were analyzed for rigid and flexible packag es of kimchi(3% salt content) at 15oC, and then effect of storage temperature was also looked into. In case of rigid pack of 400g, using the plastic sheet of high CO2 permeability and initial vacuumizing can help to relieve the problem of pressure build up. The lower fill weight can further reduce the pressure, but will result in higher packaging cost. For the flexible package of 3 kg, highly permeable films such as low density polyethylene(LDPE) and polypropylene can reduce the volume expansion. Higher ratio of CO2 permeability to O2 and N2 permeabilities are effective in reducing the volume expansion. Increased surface area cannot contribute to reduction of volume expansion for highly permeable flexible packages of kimchi. For the impermeable packages, pressure and volume at over ripening stage (acidity 1.0%) increase with decreased temperature, while those at optimum ripening stage(acidity 0.6%) change little with temperature. Pressure of permeable rigid LDPE package increases with tem perature at any ripening stage, and temperature affects the volume of flexible LDPE package very slightly. Experimental verification of the present results and package design with economical consid eration are needed as a next step for practical application.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.113-118
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• 2019

In this study, we investigated the growth of single-crystallinity α-Ga₂O₃ thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga₂O₃. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga₂O₃ thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 10⁴ cm^-2.