• Journal of Sensor Science and Technology
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• v.26 no.5
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• pp.331-337
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• 2017

A readout circuit for a tactile sensor pad based on force sensing resistors was proposed, which was composed of an analog signal conditioning circuit and a digital circuit with a microcontroller. The conventional signal conditioning circuit has a dc offset voltage in the output signal, which results from the reference voltage applied to the FSR devices. The offset voltage reduces the dynamic range of the circuit and makes it difficult to operate the circuit under a low voltage power supply. In the proposed signal conditioning circuit, the dc offset voltage was removed completely. The microcontroller with A/D converter and D/A converter was used to enlarge the measurement range of pressure. For this, the microcontroller adjusts the FSR reference voltage according to the resistance magnitude of FSR under pressure. The operation of the proposed readout circuit which was connected to a tactile sensor pad with $5{\times}10$ FSR array was verified experimentally. The experimental results show the proposed readout circuit has the wider measurement range of pressure than the conventional circuit. The proposed circuit is suitable for low voltage and low power applications.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.5
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• pp.49-56
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• 2006

The bi-directional converter interfaces the low voltage battery to the inverter do link of FC generation system. When power flows from the low voltage side(battery: 48[V]) to the high voltage side(dc link: 380[V]), the circuit works in discharge mode (boost) to power the high voltage side load; otherwise, it works in charge mode (buck) to charge the low voltage side battery. In this paper, the 1.5[kW] active clamp current-fed full bridge converter employing MOSFETs is operated to discharge the battery whereas a voltage-fed half bridge converter employing IGBTs is operated to charge the battery.

• Journal of Power Electronics
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• v.18 no.1
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• pp.116-128
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• 2018

Conventionally, in order to reduce the ac components of the dc-link capacitors of the two-level Half-Bridge Voltage Source Inverter (HB-VSI), high dc-link capacitances are required. This necessitates the employment of short-lifetime and bulky electrolytic capacitors. In this paper, an analysis for the performance of low dc-link capacitances-based HB-VSI is presented to elucidate its ability to generate an enhanced fundamental output voltage magnitude without increasing the voltage rating of the involved switches. This feature is constrained by the load displacement factor. The introduced enhancement is due to the ac components of the capacitors' voltages. The presented approach can be employed for multi-phase systems through using multi single-phase HB-VSI(s). Mathematical analysis of the proposed approach is presented in this paper. To ensure a successful operation of the proposed approach, a closed loop current controller is examined. An expression for the critical dc-link capacitance, which is the lowest dc-link capacitance that can be employed for unipolar capacitors' voltages, is derived. Finally, simulation and experimental results are presented to validate the proposed claims.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.349-352
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• 2003

A personal low-frequency stimulator is a portable device to relax muscle pains of a person. The stimulator generates combined low-frequency pulses to be applied to pads attached to painful muscles. This paper reports a development of such device with its characteristic analyses. The major components of our stimulator are MCU, high-voltage generating circuit part, high-voltage switching circuit part, input switch part and display unit. High-voltage generating circuit is designed by using a boost converter circuit and allows user control of the output voltage. High-voltage switching circuit, controlled by MCU, generates output voltage to be applied to pads. Input switch part is composed of power supply, intensity selection, mode selection and memory. Display unit adopts a text LCD module to display modes, Intensity, output frequency and user set-up time. Our designed safety circuit, to protect human body from possible electric shock, slowly increases the output voltage to the selected output intensity. It continuously checks the output pulse shape and disable the output when dangerous pulses are detected. This paper also shows some experimental results.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• Journal of the Korean Society of Industry Convergence
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• v.22 no.3
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• pp.365-371
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• 2019

Recently, the demonstration and research on the power transmission using high voltage DC such as HVDC(High Voltage DC), Smart Grid, DC transmission and distribution have been actively conducted. In order to control the power converter in high-voltage DC power transmission system, SMPS(Switching Modulation Power Supply) for power converter control using high-voltage DC input is essential. However, the demand for high-pressure SMPS is still low, so the development is not enough. In the low-output SMPS using the high-voltage input, it is difficult to achieve high efficiency due to the switching transient loss especially at light load. In this paper, we propose a new switching scheme for high power SMPS control for low output power. The proposed method can provide better efficiency increase effect in the light load region compared to the existing PWM method. To verify the feasibility of the proposed method, a 40 W SMPS for HVDC MMC(Modulation Multi-level Converter) was designed and verified by simulation.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.50 no.10
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• pp.501-507
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• 2001

In this paper, new high-efficiency zero voltage switching (ZVS) AC-DC boost converter is proposed to achieve power factor correction by simplifing energy recovery circuit. A lot of high power factor correction circuits have been proposed and applied to increase input power factor and efficiency. Most of these circuits may obtain unity power factor and achieve sinusoidal current waveform with zero voltage or/and zero current switching. However, it is difficult for them to obtain low cost, small size, low weight, and low noise. The topology proposed to improve these problems can compact the devices in circuit and can achieve high efficiency ZVS AC-DC boost converter. Simulation and experimental results show that this topology is capable of obtaining high power factor and increasing the efficiency of the system.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1605-1607
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• 2000

In this paper, the design of class AB BiCMOS log-domain filter for low-voltage and low-power was proposed. This filter is consist of a log-domain integrator using folded junctions with capacitor connected to emitter and it's class AB structure. A comparison between the proposed class AB BiCMOS log-domain filter and classical class A BiCMOS log-domain filter is drawn on the basis of SNR, THD and the frequency response. This comparison shows proposed filter are more than good SNR, THD and frequency characteristics than more class A log-domain filter for low voltage and low power.

• ETRI Journal
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• v.42 no.5
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• pp.790-798
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• 2020

Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.