• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.55-58
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• 2002

In this paper, the volume resistivity properties of silicone rubber investigated due to temperature dependence. And the measurement of volume resistivity is measured from 1, 5 and 10 minutes when the each applied voltage, for example, DC 100[V], 250[V], 500[V] and 1000[V], is applied. according to the step voltage application method. As a result, The volume resistivity is higher high voltage than low voltage at the room temperature, but is higher low voltage than high voltage at high temperature.

• IEIE Transactions on Smart Processing and Computing
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• 제3권4호
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• Journal of Power Electronics
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• 제5권1호
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• pp.11-19
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• 2005

This paper describes the two control techniques to perform the sensorless vector control of a PMSM by injecting the high frequency voltage to the stator terminal. The first technique is the estimation algorithm of the initial rotor position. A PMSM possesses the saliency which produces the ellipse of the stator current when the high frequency voltage is injected into the motor terminal. The major axis angle of the current ellipse gives the rotor position information at a standstill. The second control technique is a sensorless control algorithm that injects the high frequency voltage to the stator terminal in order to estimate the rotor position and speed. The rotor position and speed for sensorless vector control is calculated by appropriate signal processing to extract the position information from the stator current at low speeds or standstill. The proposed sensorless algorithm using the double-band hysteresis controller exhibits excellent reference tracking and increased robustness. Experimental results are presented to verify the feasibility of the proposed control schemes. Speed, position estimation and vector control were carried out on the floating point processor TMS320VC33.

• Journal of Power Electronics
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• 제15권3호
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• pp.695-701
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• 2015

Uninterruptible Power Supplies (UPSs) can be largely divided into the passive-standby, line-interactive and double-conversion methods. This paper proposes a double-conversion UPS with a low cost and high performance. This single phase UPS uses a single-loop robust voltage controller and 1-switch voltage doubler strategy PFC. The proposed UPS is composed of a single phase PFC, a half-bridge inverter, a battery charger and a battery discharger. Finally, the validity of proposed UPS was verified by various experimental tests.

• 전자공학회논문지C
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• 제34C권4호
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• pp.1-15
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• 1997

This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.

• 한국세라믹학회지
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• 제25권5호
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• pp.552-560
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• 1988

ZnO low voltage varistor was obtained by varying a) the amount of seed grains, b) the size of seed grains, and c) sintering temperature. Also, the optimum condition for fabricating the ZnO seed grains was studied. Large ZnO seed grains were obtained by washing a ZnO sintered body containing 1m/of BaCO3 in boiling water. When the seed grains were added, abnormal grain growth occurred, and the varistor voltage sharply decreased. However, when more than 5w/o of seed grain content was added, the varistor voltage gradually increased. When 10w/o seed grains of 75~106${\mu}{\textrm}{m}$ were added and sintered for 2 hours at 1200 to 125$0^{\circ}C$, low voltage varistor properties with V1mA/mm of 19V/mm and nonlinear exponent ($\alpha$) of 12 occurred.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.305-308
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• 2000

A technique to suppress the low frequency ripple voltage of the DC output in three phase buck diode rectifiers is presented in this paper. The proposed pulse frequency modulation methods and duty ratio modulation methods are employed to regulate the output voltage of the buck diode rectifiers and guarantee zero-current -switching(ZCS) of the switch over the wide load range The proposed control methods used in this paper provide generally good performance such as low THD of the input line current and unity power factor. IN addition control methods can be effectively used to suppress the low frequency ripple voltage appeared in the dc output voltage. The harmonic injection technique illustrates its validity and effectiveness through the simulations.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1185-1188
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• 2007

The address discharge characteristics by the various scan-low and common-bias voltages are investigated based on measured address discharge time lags and $V_t$ close-curve analysis. The scan-low voltages are changed under the same voltage difference between the X and Y electrodes during an address period. As the voltage difference between the scan and address electrodes is increased during an address period, the address discharge time lag is shortened but the background luminance is increased. It is found that the improved address discharge characteristics is caused by the effect of the higher external applied voltage during an address period than the accumulated wall charges during a reset period and the high background luminance can be prevented by applying an address-bias voltage during a rising-ramp period and low reset voltage.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.170-170
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• 2006

[ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권1호
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• pp.36-42
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• 2007

A low-power compact driver for multistandard physical layer is presented. The proposed driver achieves low power and small area through the voltage-mode driver with trans-impedance configuration and the novel hybrid driver,. In the voltage-mode driver, a trans-impedance configuration alleviates the problem of limited common-mode range of error amplifiers and the area and power overhead due to pre-amplifier. For a standard with extended output swing, only current sources are added in parallel with the voltage-mode driver, which is named a 'hybrid driver'. The hybrid architecture not only increases output swing but reduces overall driver area. The overall driver occupies $0.14mm^2$. Power consumptions under 3.3-V supply are 24.5 mW for the voltage-mode driver and 44.5 mW for the hybrid driver.